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    PNP BIPOLAR JUNCTION TRANSISTOR Search Results

    PNP BIPOLAR JUNCTION TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation
    TTA2070 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    PNP BIPOLAR JUNCTION TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Semefab Scotland

    Abstract: semefab
    Text: PPS 159 High Voltage Bipolar Process Preview Datasheet Rev 1.0 June 2000 DESCRIPTION FEATURES The PPS 159 is an industry standard, very robust, junction isolated, bipolar process. It features vertical NPN and lateral PNP Bipolar transistors, implanted resistors and


    Original     		PDF

    FMMTL717TA

    Abstract: FMMT723TA FMMT560TA
    Text: DATE: 24th September, 2010 PCN #: 2024 PCN Title: Qualification of Additional Wafer Fabrication Facility for PNP Bipolar Junction Transistors and Qualification of Alternate Die Attach Material for SOT223 Packaged Products.


    Original     		OT223 s12DE6TA ZXT13P40DE6TA ZXT1M322TA ZXT2M322TA ZXT2M322TC ZXT3M322TA ZXT4M322TA ZXT790AKTC ZXT951KTC FMMTL717TA FMMT723TA FMMT560TA PDF

    bipolar junction transistor

    Abstract: motorola an569 thermal MOTOROLA TRANSISTOR 318F AN569 MMBT2131T1 MMBT2131T3 AN569 in Motorola Power Applications
    Text: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.


    Original     		MMBT2131T1/D MMBT2131T1 MMBT2131T3 MMBT2132T1/T3) bipolar junction transistor motorola an569 thermal MOTOROLA TRANSISTOR 318F AN569 MMBT2131T1 MMBT2131T3 AN569 in Motorola Power Applications PDF

    100HZ

    Abstract: 10KW 2SA1235A
    Text: RECTRON 2SA1235A SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.2 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC


    Original     		2SA1235A OT-23 -55OC 150OC OT-23 MIL-STD-202E 100HZ 10KW 2SA1235A PDF

    125OC

    Abstract: MMBT2907LT1
    Text: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range


    Original     		MMBT2907LT1 OT-23 -55OCto 150OC OT-23 MIL-STD-202E CHARA10 125OC MMBT2907LT1 PDF

    50MHZ

    Abstract: BC808
    Text: RECTRON BC808 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 200 mW (Tamb=25OC) * Collector current ICM : 500 mA * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range


    Original     		BC808 OT-23 150OC OT-23 MIL-STD-202E 012applications 50MHZ BC808 PDF

    2SA1037

    Abstract: No abstract text available
    Text: RECTRON 2SA1037 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : -0.15 A * Collector-base voltage V(BR)CBO : -60 V * Operating and storage junction temperature range


    Original     		2SA1037 OT-23 OT-23 MIL-STD-202E 2SA1037 PDF

    2sc5344

    Abstract: TRANSISTOR 2sc5344
    Text: RECTRON 2SC5344 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.8 A * Collector-base voltage V(BR)CBO : 35 V * Operating and storage junction temperature range


    Original     		2SC5344 OT-23 150OC OT-23 MIL-STD-202E 2sc5344 TRANSISTOR 2sc5344 PDF

    2SD596

    Abstract: No abstract text available
    Text: RECTRON 2SD596 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range


    Original     		2SD596 OT-23 OT-23 MIL-STD-202E 2SD596 PDF

    100MHZ

    Abstract: BCW68H
    Text: RECTRON BCW68H SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.33 W(Tamb=25OC) * Collector current ICM : -0.8 A * Collector-base voltage V(BR)CBO : -60 V * Operating and storage junction temperature range


    Original     		BCW68H OT-23 150OC OT-23 MIL-STD-202E 100MHZ BCW68H PDF

    10KW

    Abstract: 2SC2712 sot-23 Marking LG
    Text: RECTRON 2SC2712 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 150 mW(Tamb=25OC) * Collector current ICM : 150 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range


    Original     		2SC2712 OT-23 OT-23 MIL-STD-202E 10KW 2SC2712 sot-23 Marking LG PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MMST3906 TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: -0.2 A * Collector-base voltage V(BR)CBO: -40 V * Operationg and storage junction temperature range


    Original     		MMST3906 OT-323 OT-323 MIL-STD-202E 10Vdc, 10mAdc, -10mAdc, PDF

    DTA114GE

    Abstract: SMD310
    Text: MOTOROLA Order this document by DTA114GE/D SEMICONDUCTOR TECHNICAL DATA DTA114GE Product Preview General Purpose Transistor PNP Bipolar Junction Transistor with a 10 kW Base–Emitter Resistor 50 Volts 100 mAmps 150 mW MAXIMUM RATINGS TJ = 25°C unless otherwise noted


    Original     		DTA114GE/D DTA114GE DTA114GE SMD310 PDF

    125OC

    Abstract: MMBT2907A
    Text: MMBT2907A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23


    Original     		MMBT2907A OT-23 -55OCto 150OC OT-23 MIL-STD-202E 125OC MMBT2907A PDF

    100MHZ

    Abstract: BC858A
    Text: BC858A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -30 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C


    Original     		BC858A OT-23 OT-23 MIL-STD-202E 100MHZ BC858A PDF

    100MHZ

    Abstract: BC858C
    Text: BC858C SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -30 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C


    Original     		BC858C OT-23 OT-23 MIL-STD-202E 100MHZ BC858C PDF

    100MHZ

    Abstract: BC857B
    Text: BC857B SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -50 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C


    Original     		BC857B OT-23 OT-23 MIL-STD-202E 100MHZ BC857B PDF

    100MHZ

    Abstract: BC858B
    Text: BC858B SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -30 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C


    Original     		BC858B OT-23 OT-23 MIL-STD-202E 100MHZ BC858B PDF

    MOTOROLA TRANSISTOR T2

    Abstract: motorola an569 thermal motorola an569 MOTOROLA TRANSISTOR TRANSISTOR MOTOROLA 318F AN569 MMBT2132T1 MMBT2132T3
    Text: MOTOROLA Order this document by MMBT2132T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2132T1 MMBT2132T3 Product Preview General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted)


    Original     		MMBT2132T1/D MMBT2132T1 MMBT2132T3 MMBT2131T1/T3) MOTOROLA TRANSISTOR T2 motorola an569 thermal motorola an569 MOTOROLA TRANSISTOR TRANSISTOR MOTOROLA 318F AN569 MMBT2132T1 MMBT2132T3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ct\fiiE5r Back to Bipolar Small Signal C9853 ^ QP ^NEW ENGLAND SEMICONDUCTOR LOW LEVEL SWITCHING SILICON EPITAXIAL JUNCTION PNP TRANSISTORS • LOW EC (sat • HIGH BVebo • ULTRA LOW LEAKAGE • LOW C* ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS M H A M ETC II


    OCR Scan     		C9853 C9S53 PDF

    BC856B

    Abstract: 100MHZ
    Text: BC856B SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -80 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C


    Original     		BC856B OT-23 OT-23 MIL-STD-202E BC856B 100MHZ PDF

    100MHZ

    Abstract: BC857A
    Text: BC857A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -50 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C


    Original     		BC857A OT-23 OT-23 MIL-STD-202E 100MHZ BC857A PDF

    100MHZ

    Abstract: BC856A
    Text: BC856A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -80 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C


    Original     		BC856A OT-23 OT-23 MIL-STD-202E 100MHZ BC856A PDF

    2N4403 noise figure

    Abstract: No abstract text available
    Text: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range


    Original     		2N4403 -55OC 150OC MIL-STD-202E 583-2N4403 2N4403 noise figure PDF