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    PNP DATASHEET Search Results

    PNP DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    HS9-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation
    HS1-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
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    PNP DATASHEET Price and Stock

    Tripp Lite OMNISMART-1050-PNP

    OmniSmart 120V 1050VA 705W Line-Interactive UPS, Tower, USB port
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com OMNISMART-1050-PNP 1
    • 1 $0
    • 10 $0
    • 100 $0
    • 1000 $0
    • 10000 $0
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    Mencom Corporation MDCP-3FP-5M-PNP

    MDC - PNP Lighted - Cordset - 3 Pole - Female Straight - 5M - 4A - Black - PUR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MDCP-3FP-5M-PNP
    • 1 $44.2
    • 10 $38.27
    • 100 $34.18
    • 1000 $33.67
    • 10000 $33.67
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    Mencom Corporation MDC-3MFRP-3M-PNP

    MDC - PNP Lighted - Cordset - 3 Pole - Male Straight / Female Right Angle - 3M - 4A - Yellow - PVC - Nickel Plated Brass
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MDC-3MFRP-3M-PNP
    • 1 $76.36
    • 10 $66.1
    • 100 $58.86
    • 1000 $56.78
    • 10000 $56.78
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    Mencom Corporation MDC-3MFRP-5M-PNP

    MDC - PNP Lighted - Cordset - 3 Pole - Male Straight / Female Right Angle - 5M - 4A - Yellow - PVC - Nickel Plated Brass
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MDC-3MFRP-5M-PNP
    • 1 $82.1
    • 10 $73.77
    • 100 $66.85
    • 1000 $65.26
    • 10000 $65.26
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    Mencom Corporation MDC-3MFRP-1.5M-PNP

    MDC - PNP Lighted - Cordset - 3 Pole - Male Straight / Female Right Angle - 1.5M - 4A - Yellow - PVC - Nickel Plated Brass
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MDC-3MFRP-1.5M-PNP
    • 1 $83.87
    • 10 $75.36
    • 100 $68.29
    • 1000 $66.67
    • 10000 $66.67
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    Find more PNP DATASHEET price and stock on Findchips.com

    PNP DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N121

    Abstract: 3n123
    Text: , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. OtVICI •CLARITY 3N121 3N123 3N129 3N130 3N131 BVlfO yum NPN PNP PNP PNP PNP 20 25 10 20 30 TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BVctO r»« (Jol) !(EO Vo« VMIN nA MAX uMAX .VMAX


    Original     		PDF 3N121 3N123 3N129 3N130 3N131 3N121 3n123

    Untitled

    Abstract: No abstract text available
    Text: SHD419205 PNP SHD419305 NPN SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 647, REV. A Complementary Bi-Polar Power Transistors NPN / PNP Designed for use as high-frequency drivers in audio amplifiers. SHD419205S PNP / SHD419305S (NPN) - S-100 (JANTX) Screening


    Original     		PDF SHD419205 SHD419305 SHD419205S SHD419305S S-100 150Vdc

    Untitled

    Abstract: No abstract text available
    Text: 2SB1732 / 2SB1709 Datasheet PNP -1.5A -12V Middle Power Transistor lOutline Parameter Value TUMT3 -12V -1.5A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1709 SC-96 2SB1732 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SD2702, 2SD2674


    Original     		PDF 2SB1732 2SB1709 SC-96) 2SB1732 2SD2702, 2SD2674 -500mA/ -25mA)

    NPN EBC SOT-23

    Abstract: SOT-23 EBC NPN transistor ECB TO-92
    Text: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003


    Original     		PDF PJP110A O-220 PJP168A PJ13003 PJ13005 PJ13007 NPN EBC SOT-23 SOT-23 EBC NPN transistor ECB TO-92

    Untitled

    Abstract: No abstract text available
    Text: EMD29 NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD29 (SC-107C) <For DTr2(PNP)> Parameter Value VCC -12V


    Original     		PDF EMD29 100mA SC-107C) -500mA DTC114E DTB513Z R1102A

    High voltage fast-switching PNp power transistor

    Abstract: No abstract text available
    Text: STN9360 High voltage fast-switching PNP power transistor Datasheet − preliminary data Features • High voltage capability ■ Fast switching speed 4 Applications 2 1 ■ Lighting ■ Switch mode power supply 3 SOT-223 Description This device is a high voltage fast-switching PNP


    Original     		PDF STN9360 OT-223 High voltage fast-switching PNp power transistor

    Untitled

    Abstract: No abstract text available
    Text: EMD30 NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD30 (SC-107C) <For DTr2(PNP)> Parameter Value VCC -30V


    Original     		PDF EMD30 100mA SC-107C) -200mA DTC114E DTB713Z R1102A

    Untitled

    Abstract: No abstract text available
    Text: EMD30 PNP + NPN Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet Outline <For DTr1(PNP)> Parameter Value VCC 30V 200mA 1k 10k IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD30 (SC-107C) <For DTr2(NPN)> Parameter Value


    Original     		PDF EMD30 200mA SC-107C) 100mA DTB713Z DTC114E R1102A

    Untitled

    Abstract: No abstract text available
    Text: EMD38 NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter Value VCC 50V 100mA 10kW 47kW IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD38 (SC-107C) <For DTr2(PNP)> Parameter Value VCC -50V


    Original     		PDF EMD38 100mA SC-107C) -100mA DTC114Y DTA113Z R1102A

    Untitled

    Abstract: No abstract text available
    Text: EMD29 PNP + NPN Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet Outline <For DTr1(PNP)> Parameter Value VCC 12V 500mA 1k 10k IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD29 (SC-107C) <For DTr2(NPN)> Parameter Value


    Original     		PDF EMD29 500mA SC-107C) 100mA DTB513Z DTC114E R1102A

    STN93

    Abstract: No abstract text available
    Text: STN9360 High voltage fast-switching PNP power transistor Datasheet — production data Features • High voltage capability ■ Fast switching speed 4 Applications 1 ■ Lighting ■ Switch mode power supply 2 3 SOT-223 Description This device is a high voltage fast-switching PNP


    Original     		PDF STN9360 OT-223 STN93

    Untitled

    Abstract: No abstract text available
    Text: EMD29 NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD29 (SC-107C) <For DTr2(PNP)> Parameter Value VCC -12V


    Original     		PDF EMD29 100mA SC-107C) -500mA DTC114E DTB513Z R1102A

    2N2905

    Abstract: No abstract text available
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N2905AHR 2N2905AHR 2N2905

    2N2905At

    Abstract: No abstract text available
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N2905AHR 2N2905AHR 2N2905At

    SOC3810HRB

    Abstract: transistor st 431 SOC38 ESCC SOC3810 2N3810
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet — production data Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N3810HR 2N3810HR SOC3810HRB transistor st 431 SOC38 ESCC SOC3810 2N3810

    ESCC 5207 005

    Abstract: 2N3810HR 2N3810HRG
    Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features 21 3 4 56 BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor


    Original     		PDF 2N3810HR 2N3810HR DocID15385 ESCC 5207 005 2N3810HRG

    TOP 948

    Abstract: BDS944 BDS946 BDS948 IEC134 MS80 T 948
    Text: Philips Components BDS944/946/948 Datasheet status Product specification date of issue April 1991 PNP Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


    OCR Scan     		PDF BDS944/946/948 OT223) BDS943/945/947. OT223 BDS944 BDS946 BDS948 TOP 948 IEC134 MS80 T 948

    BDS60

    Abstract: S80 SMD BDS60A BDS60B BDS60C UBB018 smd npn darlington FAG 29 diode
    Text: Philips Components Datasheet status Product specification date of Issue April 1M1 BDS60/60A/60B/60C PNP Silicon Darlington power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP Silicon power transistors in a


    OCR Scan     		PDF BDS60/60A/60B/60C OT223) BDS61/61 B/61C. OT223 BDS60 BDS60A BDS60B BDS60C S80 SMD UBB018 smd npn darlington FAG 29 diode

    BDS940

    Abstract: BOS938 lem HA BDS934 BDS936 BDS938 BDS942 USB002 smd transistors 458
    Text: Philips Component« BDS934/936/938/940/942 Datasheet status Product specification date of Issue April 1991 PNP silicon epitaxial base power transistors PINNING -SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors


    OCR Scan     		PDF BDS934/936/938/940/942 OT223) BDS933/935/ BDS934 BDS936 BDS938 BDS940 BDS942 BOS938 lem HA USB002 smd transistors 458

    Untitled

    Abstract: No abstract text available
    Text: Philips Component* BDV64F/64AF/64BF/64CF Datasheet status Product specification PNP silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3 PNP epitaxial base transistors in a m onolithic Darlington circu it fo r


    OCR Scan     		PDF BDV64F/64AF/64BF/64CF OT199 BDV65F/ 65AF/65BF/65CF. BDV64F BDV64AF BDV64BF BDV64CF bb53c 0034A00

    S95 SMD

    Abstract: s954 s95A BDS950 BDS952 BDS954 BDS956 BDS95S 1S91
    Text: Philips Components Datasheet status Product specification date of Issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector em itter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors


    OCR Scan     		PDF BDS950/952/954/956 OT223) BDS949/951/953/955. OT223 BDS950 BDS952 BDS954 BDS956 S95 SMD s954 s95A BDS95S 1S91

    S46 SMD

    Abstract: No abstract text available
    Text: Philips Components BDS 944/946/948 Datasheet status P ro d u ct sp ecification date of issue April 1991 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PNP silicon epitaxial base transistors in a m iniature SMD envelope SOT223 intended fo r general


    OCR Scan     		PDF OT223 OT223) BDS943/945/947. BDS944 BDS946 BDS948 bb53T31 BDS944/946/948 DD34b43 S46 SMD

    MPS650

    Abstract: TO-92 CASE CENW650 CENW751 MPS651 MPS750 MPS751 T0237 MPS75
    Text: Datasheet Central Semiconductor Corp. MPS650 MPS651 NPN T0-92 EBC MPS750 MPS751 PNP TO-92 EBC CENW650 CENW651 NPN T0-237 EBC CENW750 CENW751 PNP T0-237 EBC 145 Adams Avenue, Hauppauge, NY 11788 USA COMPLEMENTARY SILICON SMALL Tel: 631 435-1110 • Fax: (631) 435-1824


    OCR Scan     		PDF MPS650 MPS651 T0-92 MPS750 MPS751 CENW650 CENW651 T0-237 CENW750 CENW751 TO-92 CASE T0237 MPS75

    2N4406

    Abstract: 2N4407
    Text: Datasheet Central 2N4406 2N4407 Sem iconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4406, 2N4407 types are PNP Silicon Epitaxial Planar Transistors designed


    OCR Scan     		PDF 2N4406 2N4407 2N4406, 2N4407 2N4406 150mA, 100mA 150mA 500mA 150mA