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    PNP EPITAXIAL SILICON TRANSISTOR 5A Search Results

    PNP EPITAXIAL SILICON TRANSISTOR 5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP EPITAXIAL SILICON TRANSISTOR 5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIP127G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. Lead-free: TIP127L Halogen-free: TIP127G


    Original     		PDF TIP127 TIP127 TIP127L TIP127G TIP127-TA3-T TIP127-T60-K TIP127L-TA3-T TIP127L-T60-K TIP127G-TA3-T TIP127G-T60-K TIP127G

    tip127

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. „ EQUIVALENT TEST R1 ≈8kΩ, R2 ≈0.12kΩ


    Original     		PDF TIP127 TIP127 TIP127L-T60-K TIP127G-T60-K TIP127L-TA3-T TIP127G-TA3-T O-126 O-220 QW-R203-005

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. „ EQUIVALENT TEST R1 ≈8kΩ, R2 ≈0.12kΩ


    Original     		PDF TIP127 TIP127 TIP127L-T60-K TIP127G-T60-K TIP127L-TA3-T TIP127G-TA3-T TIP127L-TF3-T TIP127G-TF3-T O-126 O-220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR  DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide


    Original     		PDF STD888 STD888 STD888L-at QW-R209-028

    sop8901

    Abstract: No abstract text available
    Text: SOP8901 Ordering number : ENN8199 SOP8901 PNP Epitaxial Planar Silicon Transistor N-Channel Silicon MOSFET Motor Bridge Circuit Applications Features • Composite type with a PNP transistor and an N-ch Sillicon MOSFET contained in one package facilitating highdensity mounting.


    Original     		PDF OP8901 ENN8199 sop8901

    2SB817P

    Abstract: 2SD1047P
    Text: Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features unit : mm 2022A [2SB817P / 2SD1047P] 15.6


    Original     		PDF ENN6572 2SB817P 2SD1047P: 2SB817P 2SD1047P AF80W 2SD1047P] 2SD1047P

    Untitled

    Abstract: No abstract text available
    Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


    Original     		PDF MJD210 500mA QW-R213-001

    Untitled

    Abstract: No abstract text available
    Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


    Original     		PDF MJD210 500mA QW-R213-001

    ic 2903 data

    Abstract: ENN6591 CPH3109 CPH5705 SBS004
    Text: Ordering number : ENN6591 CPH5705 TR : PNP Epitaxial Planar Silicon Transistor SBD : Sohottky Barrier Diode CPH5705 DC / DC Converter Applications Features unit : mm 2156 4 0.15 3 0.6 5 0.2 [CPH5705] 2.9 0.05 0.6 • Composite type with a PNP transistor and a Schottky


    Original     		PDF ENN6591 CPH5705 CPH5705] CPH5705 CPH3109 SBS004, ic 2903 data ENN6591 SBS004

    2SB1683

    Abstract: 2SD2639 12AAF NPN transistor Electronic ballast
    Text: Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features • • Package Dimensions Wide ASO because of on-chip ballast resistance.


    Original     		PDF ENN6960 2SB1683 2SD2639 2SB1683 2010C 2SD2639] 2SD2639 12AAF NPN transistor Electronic ballast

    PART NUMBER OF PNP 2A DPAK

    Abstract: No abstract text available
    Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


    Original     		PDF MJD210 MJD210 500mA QW-R209-019 PART NUMBER OF PNP 2A DPAK

    Untitled

    Abstract: No abstract text available
    Text: CPH5506 Ordering number : EN6590A SANYO Semiconductors DATA SHEET CPH5506 PNP/NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications • Relay drivers, Lamp drivers, Motor drivers Features • • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density


    Original     		PDF EN6590A CPH5506 CPH5506 CPH3115 CPH3215,

    marking EW

    Abstract: CPH5520
    Text: CPH5520 Ordering number : ENA0485 SANYO Semiconductors DATA SHEET CPH5520 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers, gate drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density


    Original     		PDF CPH5520 ENA0485 A0485-5/5 marking EW CPH5520

    transistor A1045

    Abstract: FET MARKING QG tr fet 1A tr fet 2A RL66
    Text: VEC2905 Ordering number : ENA1045 SANYO Semiconductors DATA SHEET VEC2905 PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Composite type, facilitatiing high-density mounting. Mounting height 0.75mm.


    Original     		PDF VEC2905 ENA1045 A1045-6/6 transistor A1045 FET MARKING QG tr fet 1A tr fet 2A RL66

    2SB1127

    Abstract: 2sb1127 TRANSISTOR
    Text: Ordering number:2452 PNP Epitaxial Planar Silicon Transistor 2SB1127 20V/5A Switching Applications Applications Package Dimensions • Strobe, power supplies, relay drivers, lamp drivers. unit:mm 2009A Features [2SB1127] · Adoption of FBET, MBIT processes.


    Original     		PDF 2SB1127 2SB1127] O-126 2SB1127 2sb1127 TRANSISTOR

    2SB1140

    Abstract: 2069A
    Text: Ordering number:2069A PNP Epitaxial Planar Silicon Transistor 2SB1140 20V/5A Switching Applications Applications Package Dimensions • Strobes, power supplies, relay drivers, lamp drivers. unit:mm 2042A Features [2SB1140] · Adoption of FBET, MBIT processes.


    Original     		PDF 2SB1140 2SB1140] O-126ML 2SB1140 2069A

    2SA1854

    Abstract: No abstract text available
    Text: Ordering number:EN4133 PNP Epitaxial Planar Silicon Transistor 2SA1854 20V/5A Switching Applications Applications Package Dimensions • Strobes, power supplies, relay drivers, lamp drivers. unit:mm 2084B Features [2SA1854] · Adoption of FBET and MBIT processes.


    Original     		PDF EN4133 2SA1854 2084B 2SA1854] 2SA1854

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating


    OCR Scan     		PDF EN6007 CPH6701 CPH670I CPH3106 CPH6701]

    marking PA

    Abstract: CPH3106 CPH6701 "marking PA"
    Text: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.


    OCR Scan     		PDF ENN6007A CPH6701 CPH6701 CPH3106 SBS001, CPH6701] marking PA "marking PA"

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN6987 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2062 / 2SC5774 ISMiYOi 140V / 10A, AF 70W Output Applications Features Package Dimensions • Large current capacitance. • W ide ASO and high durability against breakdow n.


    OCR Scan     		PDF ENN6987 2SA2062 2SC5774 2SA2062

    bss44

    Abstract: No abstract text available
    Text: BSS 44 SILICON PLANAR PNP HIGH-CURREIMT, GENERAL PURPOSE TRANSISTOR The BSS 44 is a silicon planar epitaxial PN P transistor in Jedec: T O -3 9 metal case. It is used for high-current switching and power am plifier applications up to 5A. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF

    60w af applications Sanyo

    Abstract: No abstract text available
    Text: Ordering n um ber: ENN6960 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 Is m I yo i 140V / 12A, AF 60W Output Applications Features Package Dimensions . Wide ASO because of’ on-chip ballast resistance.


    OCR Scan     		PDF ENN6960 2SB1683 2SD2639 2SB1683 2010C 60w af applications Sanyo

    Untitled

    Abstract: No abstract text available
    Text: Ordering n um ber: ENN6988 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2063 / 2SC5775 ISAfÍYOi 160V / 12A, AF90W Output Applications Package Dimensions Features * Large current capacitance. • W ide A SO and high durability against breakdow n.


    OCR Scan     		PDF ENN6988 2SA2063 2SC5775 AF90W 2SA2063

    1C00

    Abstract: 2SB1127
    Text: Ordering number: EN2452 2SB1127 PNP Epitaxial Planar Silicon Transistor 20V/5A Swtching Applications Applications * Strobe, power supplies, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . Low saturation voltage . Large current capacity


    OCR Scan     		PDF EN2452 2SB1127 1C00