Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PNP LOW SATURATION Search Results

    PNP LOW SATURATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    PNP LOW SATURATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MLP322

    Abstract: ZXT4M322 ZXTD4M322TA ZXTD4M322TC
    Text: ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation PNP transistor offers extremely low on state


    Original     		PDF ZXT4M322 MLP322 MLP322 ZXT4M322 ZXTD4M322TA ZXTD4M322TC

    log sheet air conditioning

    Abstract: MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC
    Text: ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


    Original     		PDF ZXTD3M832 MLP832 log sheet air conditioning MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC

    up2518

    Abstract: UP2518G-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS „ FEATURES * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT)


    Original     		PDF UP2518 UP2518L UP2518G UP2518L-AE3-R UP2518-AE3-R UP2518G-AE3-R OT-23 QW-R206-083 up2518 UP2518G-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1A; PNP: VCEO=-60V; VCE(sat)=-0.175V; IC= -1A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		PDF ZXTD6717E6 OT23-6 Continuo725

    SMD TRANSISTOR MARKING 2e

    Abstract: 2e SMD PNP TRANSISTOR
    Text: PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5130PAP DFN2020-6 OT1118) PBSS4130PANP. PBSS4130PAN. AEC-Q101 SMD TRANSISTOR MARKING 2e 2e SMD PNP TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3540F 40 V low VCEsat PNP transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS3540F FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage


    Original     		PDF M3D425 PBSS3540F 613514/01/pp8

    PNP TRANSISTOR

    Abstract: PBSS4140V PBSS5140V
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5140V 40 V low VCEsat PNP transistor Objective specification 2001 Oct 19 Philips Semiconductors Objective specification 40 V low VCEsat PNP transistor PBSS5140V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage


    Original     		PDF M3D744 PBSS5140V SCA73 613514/01/pp8 PNP TRANSISTOR PBSS4140V PBSS5140V

    PBSS4160

    Abstract: PBSS4160DS PBSS5160DS
    Text: PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat BISS transistor Rev. 01 — 16 July 2004 Objective data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. NPN complement: PBSS4160DS. 1.2 Features


    Original     		PDF PBSS5160DS OT457 SC-74) PBSS4160DS. PBSS4160 PBSS4160DS PBSS5160DS

    TRANSISTOR SMD MARKING CODE 2P

    Abstract: DFN2020 transistor marking codes 2P transistor footprint
    Text: PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5260PAP DFN2020-6 OT1118) PBSS4260PANP. PBSS4260PAN. AEC-Q101 TRANSISTOR SMD MARKING CODE 2P DFN2020 transistor marking codes 2P transistor footprint

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES 3 * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)


    Original     		PDF UP2518 OT-23 UP2518L UP2518-AE3-R UP2518L-AE3-R OT-23 UP2518L-AE3-R QW-R206-083

    ZXTD720MC

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTD720MC ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


    Original     		PDF ZXTD720MC ZXTD3M832 MLP832 ZXTD720MC

    up2518

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS „ FEATURES *Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)


    Original     		PDF UP2518 UP2518L-AE3-R UP2518G-AE3-R OT-23 QW-R206-083 up2518

    transistor pnp VCEO 12V Ic 1A

    Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		PDF ZXTD6717E6 OT23-6 OT23-6 transistor pnp VCEO 12V Ic 1A ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak

    PNP TRANSISTOR SOT666

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat


    Original     		PDF M3D744 PBSS5240V SCA75 613514/01/pp12 PNP TRANSISTOR SOT666

    marking 52 sot363

    Abstract: MARKING CODE 24 TRANSISTOR PNP TRANSISTOR SOT363 SOT363 flash sot89 footprint PBSS4240Y PBSS5240Y 08381
    Text: DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS5240Y 40 V low VCEsat PNP transistor Product specification 2001 Oct 24 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240Y FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage


    Original     		PDF MBD128 PBSS5240Y OT89/SOT223 SCA73 613514/01/pp8 marking 52 sot363 MARKING CODE 24 TRANSISTOR PNP TRANSISTOR SOT363 SOT363 flash sot89 footprint PBSS4240Y PBSS5240Y 08381

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it


    Original     		PDF UP2855 UP2855 OT-223 UP2855L-AA3-R UP2855G-AA3-R QW-R207-024

    PBSS5140D

    Abstract: PNP TRANSISTOR SOT457
    Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D302 PBSS5140D 40 V low VCEsat PNP transistor Product specification 2001 Nov 15 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140D QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage


    Original     		PDF M3D302 PBSS5140D SCA73 613514/01/pp8 PBSS5140D PNP TRANSISTOR SOT457

    free transistor and ic equivalent data

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat


    Original     		PDF M3D744 PBSS5240V 01-May-99) free transistor and ic equivalent data

    marking code TR2

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product specification 2003 Feb 20 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat


    Original     		PDF M3D302 PBSS4240DPN SCA75 613514/01/pp12 marking code TR2

    PNP TRANSISTOR SOT457

    Abstract: marking code SC-74
    Text: DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS5320D 20 V low VCEsat PNP transistor Product specification 2002 Jun 12 Philips Semiconductors Product specification 20 V low VCEsat PNP transistor PBSS5320D FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage


    Original     		PDF MBD128 PBSS5320D SCA74 613514/01/pp8 PNP TRANSISTOR SOT457 marking code SC-74

    PBSS4350SPN

    Abstract: PBSS4350SS PBSS5350SS
    Text: PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat BISS transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5350SS OT96-1 PBSS4350SPN PBSS4350SS PBSS5350SS PBSS4350SPN PBSS4350SS

    PBSS4240DPN

    Abstract: marking code TR2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat


    Original     		PDF M3D302 PBSS4240DPN 613514/01/pp12 PBSS4240DPN marking code TR2

    PBSS4240V

    Abstract: PBSS5240V
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product data sheet 2003 Jan 30 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat


    Original     		PDF M3D744 PBSS5240V 613514/01/pp9 PBSS4240V PBSS5240V

    sot23 transistor marking ZF

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5240T 40 V low VCEsat PNP transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage


    Original     		PDF M3D088 PBSS5240T OT89/SOT223 SCA73 613514/01/pp12 sot23 transistor marking ZF