MLP322
Abstract: ZXT4M322 ZXTD4M322TA ZXTD4M322TC
Text: ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation PNP transistor offers extremely low on state
|
Original
|
ZXT4M322
MLP322
MLP322
ZXT4M322
ZXTD4M322TA
ZXTD4M322TC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it
|
Original
|
UP2855
UP2855
OT-223
UP2855L-AA3-R
UP2855G-AA3-R
QW-R207-024
|
PDF
|
PBSS4350SPN
Abstract: PBSS4350SS PBSS5350SS
Text: PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat BISS transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
|
Original
|
PBSS5350SS
OT96-1
PBSS4350SPN
PBSS4350SS
PBSS5350SS
PBSS4350SPN
PBSS4350SS
|
PDF
|
PBSS5320D
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PBSS5320D 20 V low VCEsat PNP transistor Product data sheet 2002 Jun 12 NXP Semiconductors Product data sheet 20 V low VCEsat PNP transistor PBSS5320D FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage
|
Original
|
MBD128
PBSS5320D
613514/01/pp7
PBSS5320D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC PUMT1 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION Two independently operating PNP transistors. FEATURES *Low current max.100mA 6 *Low voltage (max.40V) 5 4 *Reduces number of components and board space. * Complement to PUMX1.
|
Original
|
100mA)
OT-363
QW-R218-001
-50mA,
100MHz
|
PDF
|
MQ3799A
Abstract: MQ3798 MQ3799 4PD4
Text: MQ3798 silicon MQ3799 MQ3799A PNP SILICON ANNULAR PNP SILICON M ULTIPLE TRANSISTORS M ULTIPLE TRANSISTORS . . . designed for use in high-gain, low noise amplifiers; front end detectors and temperature compensation applications. Low Collector-Emitter Saturation Voltage —
|
OCR Scan
|
MQ3798
MQ3799
MQ3799A
MQ3799A
MQ3798
4PD4
|
PDF
|
pnp 300v
Abstract: NTE296
Text: NTE296 Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. Absolute Maximum Ratings:
|
Original
|
NTE296
NTE296
10MHz
pnp 300v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MPS-A92 PNP SILICON HIGH VOLTAGE TRANSISTOR TO-92A MPS-A92 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage
|
OCR Scan
|
MPS-A92
O-92A
MPS-A92
500m/
625mV
20MHz
Boxfc9477,
|
PDF
|
ZX5T953GTA
Abstract: ZX5T953G ZX5T953GTC x5t953
Text: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC
|
Original
|
ZX5T953G
OT223
-100V
OT223
ZX5T953GTA
ZX5T953GTC
ZX5T953GTA
ZX5T953G
ZX5T953GTC
x5t953
|
PDF
|
PBSS5120T
Abstract: PBSS4120T
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS5120T 20 V, 1 A PNP low VCEsat BISS transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 20 V, 1 A PNP low VCEsat (BISS) transistor PBSS5120T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat
|
Original
|
M3D088
PBSS5120T
R75/01/pp7
PBSS5120T
PBSS4120T
|
PDF
|
53Z Zetex
Abstract: 1a SOT89 IC35
Text: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
|
Original
|
ZXTP2009Z
-60mV
ZXTP2009ZTA
522-ZXTP2009ZTA
ZXTP2009ZTA
53Z Zetex
1a SOT89
IC35
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC HE8551 PNP EPITAXIAL SILIC ON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose
|
Original
|
HE8551
HE8551
HE8051
QW-R201-047
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions
|
Original
|
UP2855
UP2855
OT-223
UP2855L-AA3-R
UP2855G-AA3-R
QW-R207-
QW-R207-024
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose
|
Original
|
HE8550
HE8050
OT-89
QW-R208-014
|
PDF
|
|
|
MJE1123
Abstract: LT1123
Text: MOTOROLA Order this document by MJE1123/D SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout
|
Original
|
MJE1123/D
MJE1123
MJE1123
MJE1123/D*
LT1123
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for
|
Original
|
HE8550
OT-89
OT-23
HE8550
HE8050
O-92NL
HE8550L
HE8550-x-AB3-R
HE8550L-x-AB3-R
HE8550-x-AE3-R
|
PDF
|
nte102
Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
Text: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:
|
Original
|
NTE102
NTE103
200mV
nte102
NTE103
vpt 20
germanium transistors NPN
NTE10-3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated
|
Original
|
SUM202MN
KSD-T6T001-002
|
PDF
|
TIP127G
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. Lead-free: TIP127L Halogen-free: TIP127G
|
Original
|
TIP127
TIP127
TIP127L
TIP127G
TIP127-TA3-T
TIP127-T60-K
TIP127L-TA3-T
TIP127L-T60-K
TIP127G-TA3-T
TIP127G-T60-K
TIP127G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage * Low collector saturation voltage.
|
Original
|
2SA1627A
2SA1627A
2SA1627AL-x-AA3-R
2SA1627AG-x-AA3-R
2SA1627AL-x-TM3-T
2SA1627AG-x-TM3-T
2SA1627AL-x-TN3-R
2SA1627AG-x-TN3-R
2SA1627AL-x-T60-K
2SA1627AG-x-T60-K
|
PDF
|
MJD200
Abstract: MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G
Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −
|
Original
|
MJD200
MJD210
MJD200/D
MJD200
MJD200G
MJD200RL
MJD200RLG
MJD200T4
MJD200T4G
MJD210
MJD210G
|
PDF
|
MJD200
Abstract: MJD200G MJD200RLG MJD200T4G MJD210 MJD210G MJD210RLG MJD210T4
Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −
|
Original
|
MJD200
MJD210
MJD200/D
MJD200
MJD200G
MJD200RLG
MJD200T4G
MJD210
MJD210G
MJD210RLG
MJD210T4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., FZT955 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps
|
Original
|
FZT955
OT-223
FZT955L
FZT955-AA3-R
FZT955L-AA3-R
OT-223
QW-R207-010
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity
|
Original
|
2SA733
2SA733
150mA
2SC945
QW-R201-003
|
PDF
|
