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    PNP POWER TRANSISTOR T1P122 Search Results

    PNP POWER TRANSISTOR T1P122 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP POWER TRANSISTOR T1P122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T1P122

    Abstract: PNP POWER TRANSISTOR T1P122 PNP POWER TRANSISTOR TO220 T1P142F TIP1411 T1P142 TIP125 TIP140F TIP141F rtip141
    Text: SAMSUNG SEMICONDUCTOR 14E INC O | 7 cU , 4 1 4 a 0007740 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 26 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to T1P121 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Collector-Base Voltage


    OCR Scan     		PDF O-220 TIP125 P140T/141T/142T T-33-29 T1P140--JT1P14V T1P122 PNP POWER TRANSISTOR T1P122 PNP POWER TRANSISTOR TO220 T1P142F TIP1411 T1P142 TIP140F TIP141F rtip141

    PNP POWER TRANSISTOR T1P122

    Abstract: T1P122 TRANSISTOR tip122 TIP 122 transistor tip120 motorola TIP127 circuit TIP127
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P lastic M edium -Pow er Com plem entary Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ lc = 4.0 Adc • Coiiector-Emitter Sustaining Voltage — @ 100 mAdc


    OCR Scan     		PDF TIP120, TIP125 TIP121, TIP126 O-220AB TIP126 TIP127 TIP122 PNP POWER TRANSISTOR T1P122 T1P122 TRANSISTOR tip122 TIP 122 transistor tip120 motorola TIP127 circuit TIP127

    T1P121

    Abstract: T1P127 TIPI27 TIPI22 TIPI20 TIPI25 T1P126 tip122 motorola OF TRANSISTOR tip122 tip121.tip122
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hpE = 2500 Typ (§> le = 4.0 Adc • Coilector-Emitter Sustaining Voltage — @ 100 mAdc


    OCR Scan     		PDF TIP120, TIP125 TIP121 TIP126 TIP122, TIP127 O-220AB TIP121* TIP122* TIP125* T1P121 T1P127 TIPI27 TIPI22 TIPI20 TIPI25 T1P126 tip122 motorola OF TRANSISTOR tip122 tip121.tip122

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8