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    PNP SATURATION TRANSISTOR Search Results

    PNP SATURATION TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP SATURATION TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    log sheet air conditioning

    Abstract: MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC
    Text: ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


    Original     		PDF ZXTD3M832 MLP832 log sheet air conditioning MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC

    MLP322

    Abstract: ZXT4M322 ZXTD4M322TA ZXTD4M322TC
    Text: ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation PNP transistor offers extremely low on state


    Original     		PDF ZXT4M322 MLP322 MLP322 ZXT4M322 ZXTD4M322TA ZXTD4M322TC

    ZXTD720MC

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTD720MC ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


    Original     		PDF ZXTD720MC ZXTD3M832 MLP832 ZXTD720MC

    Untitled

    Abstract: No abstract text available
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1A; PNP: VCEO=-60V; VCE(sat)=-0.175V; IC= -1A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		PDF ZXTD6717E6 OT23-6 Continuo725

    transistor pnp VCEO 12V Ic 1A

    Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		PDF ZXTD6717E6 OT23-6 OT23-6 transistor pnp VCEO 12V Ic 1A ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it


    Original     		PDF UP2855 UP2855 OT-223 UP2855L-AA3-R UP2855G-AA3-R QW-R207-024

    transistor A2

    Abstract: diodes transistor marking k2 dual DFN3020B-8
    Text: A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A


    Original     		PDF ZXTPS718MC -220mV 500mV DFN3020B-8 DS31937 transistor A2 diodes transistor marking k2 dual DFN3020B-8

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A


    Original     		PDF ZXTPS718MC -220mV 500mV DFN3020B-8 DS31937

    DFN3020B-8

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTPS720MC 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A


    Original     		PDF ZXTPS720MC -220mV 500mV DFN3020B-8 DS31938 DFN3020B-8

    TRANSISTOR b100

    Abstract: diode r207 UP1868
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR FEATURES * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.


    Original     		PDF UP1868 OT-223 UP1868L UP1868-AA3-R UP1868L-AA3-R QW-R207-015 TRANSISTOR b100 diode r207 UP1868

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTPS720MC 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A


    Original     		PDF ZXTPS720MC -220mV 500mV DFN3020B-8 DS31938

    UP1868

    Abstract: UP1868-AA3-F-R UP1868L-AA3-F-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR „ FEATURES * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.


    Original     		PDF UP1868 UP1868L UP1868-AA3-F-R UP1868L-AA3-F-R OT-223 QW-R207-015 UP1868 UP1868-AA3-F-R UP1868L-AA3-F-R

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A


    Original     		PDF ZXTPS717MC -140mV 500mV DFN3020B-8 DS31936

    DFN3020B-8

    Abstract: diodes transistor marking k2 dual
    Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A


    Original     		PDF ZXTPS717MC -140mV 500mV DFN3020B-8 DS31936 DFN3020B-8 diodes transistor marking k2 dual

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state


    Original     		PDF ZXTP2008Z ZX5T949Z

    zxtP

    Abstract: Bv 42 transistor ZXTP2008GTA
    Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2008G OT223 OT223 ZXTP2008GTA ZXTP2008GTC 522-ZXTP2008GTA ZXTP2008GTA zxtP Bv 42 transistor

    sot223 transistor pinout

    Abstract: sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP
    Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2008G OT223 OT223 ZXTP2008GTA ZXTP2008GTC sot223 transistor pinout sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP

    Power MOSFET SOT-223

    Abstract: UP1868L-AB3 QW-R207-015
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR „ 1 FEATURES SOT-223 * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.


    Original     		PDF UP1868 OT-223 OT-89 UP1868L-AA3-F-R UP1868L-AB3-F-R OT-223 UP1868-AA3-R UP1868-AB3-R QW-R207-015 Power MOSFET SOT-223 UP1868L-AB3

    X5T951

    Abstract: ZX5T951G ZX5T951GTA ZX5T951GTC Bv 42 transistor ZX5T951GT
    Text: ZX5T951G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T951G OT223 OT223 X5T951 ZX5T951G ZX5T951GTA ZX5T951GTC Bv 42 transistor ZX5T951GT

    ZXTP2013Z

    Abstract: ZXTP2013ZTA
    Text: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		PDF ZXTP2013Z -100V ZXTP2013ZTA ZXTP2013Z ZXTP2013ZTA

    ZX5T955Z

    Abstract: ZX5T955ZTA Bv 42 transistor
    Text: ZX5T955Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T955Z -140V ZX5T955ZTA ZX5T955Z ZX5T955ZTA Bv 42 transistor

    ZXTP2012GTA

    Abstract: sot223 device Marking ZXTP2012G ZXTP2012GTC Bv 42 transistor zxtP
    Text: ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2012G OT223 OT223 ZXTP2012GTA ZXT26100 ZXTP2012GTA sot223 device Marking ZXTP2012G ZXTP2012GTC Bv 42 transistor zxtP

    Bv 42 transistor

    Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
    Text: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2013G OT223 -100V OT223 ZXTP2013GTA ZXTP2013GTC DEV26100 Bv 42 transistor zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC

    ZXTP2014Z

    Abstract: ZXTP2014ZTA
    Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		PDF ZXTP2014Z -140V ZXTP2014ZTA ZXTP2014Z ZXTP2014ZTA