2907A
Abstract: PZT2907A 2907a TRANSISTOR PNP
Text: PZT2907A PNP Silicon Silicon Planar Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-223 DESCRIPTION The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications.
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PZT2907A
OT-223
PZT2907A
-50mA
-150mA,
-15mA
-500mA,
-10mA
-150mA
2907A
2907a TRANSISTOR PNP
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2N2907A surface mount
Abstract: No abstract text available
Text: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.
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2N2907ACSM
OT23apacitance
150mA
2N2907A surface mount
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Untitled
Abstract: No abstract text available
Text: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.
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2N2907ACSM
100MHz
150mA
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2N2907A surface mount
Abstract: 2N2907A PNP Transistor 2N2907A 2N2907ACSM
Text: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.
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2N2907ACSM
150mA
2N2907A surface mount
2N2907A PNP Transistor
2N2907A
2N2907ACSM
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2N5322
Abstract: 2N5323
Text: 2N5322 2N5323 MEDIUM-POWER AMPLIFIERS DESCRIPTION The 2N5322 and 2N5323 are silicon planar epitaxial PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power applications in industrial and commercial equipments.
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2N5322
2N5323
2N5322
2N5323
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2N2894A
Abstract: 036w
Text: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.
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2N2894ACSM
300ms,
2N2894A"
2N2894A
2N2894ACSM
2N2894A-JQR-B
5/30m
800MHz
036w
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12w 98 transistor
Abstract: No abstract text available
Text: 2N2894CSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.
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2N2894CSM
300ms,
2N2894CSM"
2N2894CSM
2N2894CSM-JQR-B
5/30m
400MHz
12w 98 transistor
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ic 4078
Abstract: IC 4078 DATASHEET 2N2894ACSM 2N2894A
Text: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP
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2N2894ACSM
ic 4078
IC 4078 DATASHEET
2N2894ACSM
2N2894A
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Untitled
Abstract: No abstract text available
Text: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP
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2N2894ACSM
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2N2894A
Abstract: 2N2894ACSM
Text: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.
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2N2894ACSM
100MHz
300ms,
2N2894A
2N2894ACSM
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2N2907A LCC3
Abstract: No abstract text available
Text: 2N2907ACSM4R HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 1.40 ± 0.15
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2N2907ACSM4R
150mA
2N2907A LCC3
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2N2894A
Abstract: 2N2894ACSM
Text: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP
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2N2894ACSM
2N2894A
2N2894ACSM
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2N2894
Abstract: 2N2894CSM
Text: 2N2894CSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP
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2N2894CSM
2N2894
2N2894CSM
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Untitled
Abstract: No abstract text available
Text: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP
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2N2894ACSM
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2N2894
Abstract: 2N2894CSM 12w 98 transistor
Text: 2N2894CSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.
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2N2894CSM
100MHz
300ms,
2N2894
2N2894CSM
12w 98 transistor
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2N2907A
Abstract: 2N2907ACSM
Text: SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.
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2N2907ACSM
150mA
2N2907A
2N2907ACSM
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LCC1 weight
Abstract: 2N2907A LCC3 2N2907ACSM-JQR-B 2N2907ACSM LCC3 weight
Text: SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.
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2N2907ACSM
2N2907ACSM"
2N2907ACSM
2N2907ACSM4
2N2907ACSM4-JQR-B
2N2907ACSMCECC
2N2907ACSM-JQR-B
200MHz
LCC1 weight
2N2907A LCC3
LCC3 weight
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bss17
Abstract: 2N5322/BSS17 2n5322 2n5323
Text: 2N5322/BSS17 2N 5323/BSS18 SILICON PLANAR PNP MEDIUM-POWER A M PLIFIERS The 2N 5322/BSS17 arid 2N 5323/BSS18 are silicon planar epitaxial PNP transistors in Jedec T O -3 9 metal case. They are especially intended for high-voltage medium power applications in industrial and commercial equipments.
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2N5322/BSS17
5323/BSS18
5322/BSS17
5323/BSS18
bss17
2n5322
2n5323
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bss17
Abstract: bsst7 2n5323 5322 2n5322
Text: 2N 5322/BSS17 2N 5323/BSSW SILICON PLANAR PNP MEDIUM-POWER A M PLIFIER S The 2N 5322/BSS17 and 2N 5323/BSS18 are silicon planar epitaxial PNP transistors in Jedec T O -3 9 metal case. They are especially intended for high-voltage medium power applications in industrial and commercial equipments.
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5322/BSS17
5323/BSSHI
5323/BSS18
bss17
bsst7
2n5323
5322
2n5322
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Untitled
Abstract: No abstract text available
Text: BFX38 BFX39 BFX40 BFX41 PNP MEDI UM SILICON PLANAR POWËR SWITCHING EPITAXIAL TRANSISOR CASE TO-39 The BFX38, BFX39, BFX40 and BFX41 are PNP silicon planar epitaxial ttansistors designed for medium power amplifiers and switching applications where high voltage and high
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BFX38
BFX39
BFX40
BFX41
BFX38,
BFX39,
BFX41
BFX38/39
BFX40/41
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2N2904A
Abstract: 2N2905A PN2904A PN2905A
Text: 2N/PN2904A 2N/PN2905A PNP SILICON TRANSISTORS 2N/PN2904A & 2N/PN2905A are PNP silicon planar epitaxial transistors. TO-39 It is intended for high speed medium power switching and general purpose amplifier applications. 2N2904A 2N2905A ABSOLUTE MAXIMUM RATINGS
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2N/PN2904A
2N/PN2905A
2N/PN2904A
2N2904A
2N2905A
600mA
600mW
T0-92A
PN2904A
PN2905A
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PN2904A
Abstract: T0-92A 2N2904A 2N2905A PN2905A 2N2904A-2N2905A
Text: 2N/PN2904A 2N/PN2905A PNP SILICON TRANSISTORS 2N/PN2904A & 2N/PN2905A are PNP silicon planar epitaxial transistors. T0-39 T0-92A It is intended for high speed medium power switching and general purpose amplifier applications. 2N2904A 2N2905A ABSOLUTE MAXIMUM RATINGS
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2N/PN2904A
2N/PN2905A
2N/PN2904A
2N2904A
2N2905A
600mA
600mW
T0-92A
PN2904A
PN2905A
2N2904A-2N2905A
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX758 ISSUE 1 - APRIL 94_ *— - FEATURES * * 400 Volt VCE0 0.5 Amp continuous current * Ptot=1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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ZTX758
001G35S
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2SB939
Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
Text: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching
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2SB939,
2SB939A
2SD1262,
2SD1262A
2SB939
2SB939A
2SD1262
2SD1262A
high current Darlington pair IC
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