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    PNP TRANSISTOR 2N2907 Search Results

    PNP TRANSISTOR 2N2907 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR 2N2907 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2907A surface mount

    Abstract: 2N2907A PNP Transistor 2N2907A 2N2907ACSM
    Text: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2907ACSM 150mA 2N2907A surface mount 2N2907A PNP Transistor 2N2907A 2N2907ACSM

    2N2907A surface mount

    Abstract: No abstract text available
    Text: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2907ACSM OT23apacitance 150mA 2N2907A surface mount

    Untitled

    Abstract: No abstract text available
    Text: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2907ACSM 100MHz 150mA

    2N2907A LCC3

    Abstract: No abstract text available
    Text: 2N2907ACSM4R HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 1.40 ± 0.15


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    PDF 2N2907ACSM4R 150mA 2N2907A LCC3

    LCC1 weight

    Abstract: 2N2907A LCC3 2N2907ACSM-JQR-B 2N2907ACSM LCC3 weight
    Text: SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2907ACSM 2N2907ACSM" 2N2907ACSM 2N2907ACSM4 2N2907ACSM4-JQR-B 2N2907ACSMCECC 2N2907ACSM-JQR-B 200MHz LCC1 weight 2N2907A LCC3 LCC3 weight

    2N2907A

    Abstract: 2N2907ACSM
    Text: SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


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    PDF 2N2907ACSM 150mA 2N2907A 2N2907ACSM

    TRANSISTOR AH-16

    Abstract: AH-16 transistor
    Text: Small Signal General Purpose Transistor PNP 2N2907A Small Signal General Purpose Transistor (PNP) Features • Switching and Linear Application DC to VHF Amplifier Application • RoHS Compliant TO-18 Mechanical Data TO-18, Metal can package Case: Terminals:


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    PDF 2N2907A MIL-STD-202, TRANSISTOR AH-16 AH-16 transistor

    transistor ah-16

    Abstract: 2N2907A transistor PNP TRANSISTOR AH 16
    Text: Small Signal General Purpose Transistor PNP 2N2907A Small Signal General Purpose Transistor (PNP) Features • Switching and Linear Application DC to VHF Amplifier Application • RoHS Compliant TO-18 Mechanical Data TO-18, Metal can package Case: Terminals:


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    PDF 2N2907A MIL-STD-202, transistor ah-16 2N2907A transistor PNP TRANSISTOR AH 16

    2N2907A SEMICOA

    Abstract: 2N2907A
    Text: 2N2907A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2907AJ • JANTX level (2N2907AJX)


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    PDF 2N2907A MIL-PRF-19500 2N2907AJ) 2N2907AJX) 2N2907AJV) 2N2907AJS) MIL-STD-750 MIL-PRF-19500/291 2N2907A SEMICOA 2N2907A

    12N2907A

    Abstract: 2N2907AJ 2N2907A 2N2907AJS 2N2907AJV 2N2907AJX
    Text: 2N2907A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2907AJ • JANTX level (2N2907AJX)


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    PDF 2N2907A MIL-PRF-19500 2N2907AJ) 2N2907AJX) 2N2907AJV) 2N2907AJS) MIL-STD-750 MIL-PRF-19500/291 12N2907A 2N2907AJ 2N2907A 2N2907AJS 2N2907AJV 2N2907AJX

    2N2907AUBJS

    Abstract: 2N2907AUBJV 2N2907AUB 2N2907AUBJ
    Text: 2N2907AUB Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2907AUBJ • JANTX level (2N2907AUBJX)


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    PDF 2N2907AUB MIL-PRF-19500 2N2907AUBJ) 2N2907AUBJX) 2N2907AUBJV) 2N2907AUBJS) MIL-STD-750 MIL-PRF-19500/291 2N2907AUBJS 2N2907AUBJV 2N2907AUB 2N2907AUBJ

    Untitled

    Abstract: No abstract text available
    Text: 2N2907A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2907AJ • JANTX level (2N2907AJX)


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    PDF 2N2907A MIL-PRF-19500 2N2907AJ) 2N2907AJX) 2N2907AJV) 2N2907AJS) 2N2907AJSR) 2N2907AJSF) MIL-STD-750 MIL-PRF-19500/291

    Untitled

    Abstract: No abstract text available
    Text: 2N2907A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2907AJ • JANTX level (2N2907AJX)


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    PDF 2N2907A MIL-PRF-19500 2N2907AJ) 2N2907AJX) 2N2907AJV) 2N2907AJS) 2N2907AJSR) 2N2907AJSF) MIL-STD-750 MIL-PRF-19500/291

    2N2907AUB

    Abstract: 2N2907AUBJS
    Text: 2N2907AUB Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2907AUBJ • JANTX level (2N2907AUBJX)


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    PDF 2N2907AUB MIL-PRF-19500 2N2907AUBJ) 2N2907AUBJX) 2N2907AUBJV) 2N2907AUBJS) 2N2907AUBJSR) 2N2907AUBJSF) MIL-STD-750 MIL-PRF-19500/291 2N2907AUB 2N2907AUBJS

    Untitled

    Abstract: No abstract text available
    Text: SHD430001Q SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 917, REV. - QUAD PNP SMALL SIGNAL TRANSISTOR DESCRIPTION: PNP QUAD SMALL SIGNAL TRANSISTORS 2N2907 IN A CERAMIC LCC-28T PACKAGE MAXIMUM RATINGS RATING (ALL RATINGS ARE @ TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR)


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    PDF SHD430001Q 2N2907) LCC-28T

    SOT23 JEDEC standard orientation pad size

    Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


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    PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458

    2N2907 equivalent

    Abstract: No abstract text available
    Text: 20 STERN AVE SPRINGFIELD. NEW JERSEY 07081 TELEPHONE: 973 378-2932 2N2907 PNP SILICON PLANEX TRANSISTOR 2N2907 is a silicon PNP PLANEX* transistor designed primarily for saturated switching, D.C. amplifier and VHF-UHF communication applications. It features low saturation voltage, wide gain linearity, and high current gain bandwidth product.


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    PDF 2N2907 2N2907 Z0-50ii I50PPS 200ns 2N2907 equivalent

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    BF245 TRANSISTOR

    Abstract: transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP SmallĆSignal Darlington Transistor Motorola Preferred Device This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.


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    PDF OT-223 PZTA64T1 inch/1000 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BF245 TRANSISTOR transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819

    BC237

    Abstract: bc547 marking transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor 2SA1774 This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power


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    PDF 416/SC inch/3000 2SA1774 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 bc547 marking transistor

    2N2222A motorola

    Abstract: BC237 H2A transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor MSB1218A-RT1 Motorola Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package


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    PDF 70/SOT inch/3000 MSB1218A-RT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 2N2222A motorola BC237 H2A transistor

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2907AUA Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907AUA 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UA package, is ideal to drive


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    PDF MSR2N2907AUA MIL-PRF-19500 2N2907A EEE-INST-002 T4-LDS-0339-1,

    MSR2N2907A

    Abstract: No abstract text available
    Text: MSR2N2907A L Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907A(L) 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a TO-206AA package, is ideal to


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    PDF MSR2N2907A MIL-PRF-19500 ESCC22900 2N2907A O-206AA EEE-INST-002 FEAT00 T4-LDS-0339,

    2n2222 2n5401 2n5551

    Abstract: TPQ6700 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS S PRAGUE SERIES TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. Shown are iO NPN types, 15 PNP types, and 12 NPN/PNP complementary pairs.


    OCR Scan
    PDF 14-pin 2N2222 2N2907 TPQ6600 2N2483 2N3738 TPQ6600A 2N3799 TPQ6700 2N3904 2n2222 2n5401 2n5551 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222