18P4G
Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP
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M54562P/FP
500mA
M54562P
M54562FP
500mA)
18P4G
20P2N-A
pnp darlington array
pnp 8 transistor array
npn 8 transistor array
24 "transistor array"
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit
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500mA
M54562WP
500mA)
Jul-2011
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pnp DARLINGTON TRANSISTOR ARRAY
Abstract: M54562WP 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode
Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54562WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit
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M54562WP
500mA
M54562WP
500mA)
Jul-2011
pnp DARLINGTON TRANSISTOR ARRAY
7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode
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DARLINGTON TRANSISTOR ARRAY
Abstract: No abstract text available
Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high
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M54562FP
500mA
M54562FP
500mA)
20P2N-A
DARLINGTON TRANSISTOR ARRAY
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M54562FP
Abstract: No abstract text available
Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high
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M54562FP
500mA
M54562FP
500mA)
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MMBT4403 UTC
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: MMBT4403L
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MMBT4403
MMBT4403
500mA.
MMBT4403L
MMBT4403-AE3-R
MMBT4403L-AE3-R
OT-23
QW-R206-034
MMBT4403 UTC
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MMBT4403
Abstract: MMBT4403-AE3-R MMBT4403L
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: MMBT4403L
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MMBT4403
MMBT4403
500mA.
MMBT4403L
MMBT4403-AE3-R
OT-23
QW-R206-034
MMBT4403-AE3-R
MMBT4403L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2907A Preliminary DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMDT2907A is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA.
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MMDT2907A
MMDT2907A
500mA.
MMDT2907AG-AL6-R
OT-363
QW-R218-028
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transistor 2n4403
Abstract: 2N4403 2N4403L-T92-B 2N4403-T92-B 2N4403-T92-K
Text: UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L
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2N4403
2N4403
500mA.
2N4403L
2N4403-T92-B
2N4403L-T92-B
2N4403-T92-K
2N4403L-T92-K
QW-R201-053
transistor 2n4403
2N4403L-T92-B
2N4403-T92-B
2N4403-T92-K
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Untitled
Abstract: No abstract text available
Text: Data Sheet Midium Power Transistors ±30V / ±1A MP6Z11 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features Low saturation voltage, typically VCE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) VCE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA)
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MP6Z11
500mA
-500mA
-25mA)
R1120A
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MMDT2907A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2907A Preliminary DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMDT2907A is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA.
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MMDT2907A
MMDT2907A
500mA.
MMDT2907AL-AL6-R
MMDT2907AG-AL6-R
MMDT2227AL-AL6-R
OT-363
QW-R218-028
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L
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2N4403
2N4403
500mA.
2N4403L
2N4403-T92-B
2N4403-T92-K
QW-R201-053
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transistor 2n4403 equivalent
Abstract: transistor 2n4403 2N4403 2N4403L-T92-B 2N4403-T92-B 2N4403-T92-K
Text: UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L
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2N4403
2N4403
500mA.
2N4403L
2N4403-T92-B
2N4403L-T92-B
2N4403-T92-K
2N4403L-T92-K
QW-R201-053
transistor 2n4403 equivalent
transistor 2n4403
2N4403L-T92-B
2N4403-T92-B
2N4403-T92-K
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C2N4403
Abstract: 2N4403L-T92-B 2N4403 2N4403-T92-B 2N4403-T92-K
Text: UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 1 TO-92 *Pb-free plating product number: 2N4403L
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2N4403
2N4403
500mA.
2N4403L
2N4403-T92-B
2N4403L-T92-B
2N4403-T92-K
2N4403L-T92-K
QW-R201-053
C2N4403
2N4403L-T92-B
2N4403-T92-B
2N4403-T92-K
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T100
Abstract: No abstract text available
Text: Midium Power Transistors -30V / -1A 2SAR293P Dimensions (Unit : mm) Structure PNP Silicon epitaxial planar transistor MPT3 (SC-63) <SOT-428> Features Low saturation voltage VCE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA) (1) Applications
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2SAR293P
SC-63)
OT-428>
-500mA
-25mA)
R1010A
T100
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MMBT4403 UTC
Abstract: No abstract text available
Text: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT4403
MMBT4403
500mA.
OT-23
QW-R206-034
MMBT4403 UTC
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MMBT4403 2T
Abstract: MMBT4403 MMBT4403-AE3-R marking 2t
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION 2 The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 1 SOT-23 3 2 1 SOT-323
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MMBT4403
MMBT4403
500mA.
OT-23
OT-323
MMBT4403-AE3-R
MMBT4403-AL3-R
MMBT4403L-AE3-R
MMBT4403L-AL3-R
MMBT4403G-AE3-R
MMBT4403 2T
MMBT4403-AE3-R
marking 2t
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION 2 The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 1 SOT-23 3 2 1 SOT-323
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MMBT4403
MMBT4403
500mA.
OT-23
OT-323
MMBT4403G-AE3-R
MMBT4403G-AL3-R
QW-R206-034
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MMBT4403
Abstract: MMBT4403-AE3-R MMBT4403L
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION 2 The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 1 SOT-23 3 2 1 SOT-323
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MMBT4403
MMBT4403
500mA.
OT-23
OT-323
MMBT4403L
MMBT4403G
MMBT4403-AE3-R
MMBT4403-AL3-R
MMBT4403L-AE3-R
MMBT4403-AE3-R
MMBT4403L
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M54564
Abstract: M54564P circuit fluorescent tube 24v 18P4G 20P2N-A M54564FP TIME BASE GENERATOR 10HZ PNP DARLINGTON ARRAYS pnp 8 transistor array npn 8 transistor array
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54564P and M54564FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
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M54564P/FP
500mA
M54564P
M54564FP
500mA)
M54564
circuit fluorescent tube 24v
18P4G
20P2N-A
TIME BASE GENERATOR 10HZ
PNP DARLINGTON ARRAYS
pnp 8 transistor array
npn 8 transistor array
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1298 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES ・High DC Current Gain : hFE=100～320. ・Low Saturation Voltage : VCE sat =-0.4V(Max.) (IC=-500mA, IB=-20mA).
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-500mA,
-20mA)
KTC3265.
KTA1298
-800mA
-20mA
-10mA
-10mA,
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pnp 8 transistor array ttl
Abstract: M54564FP 18P4G 20P2N-A M54564P pnp 8 transistor array npn 8 transistor array high voltage high current darlington array 18
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54564P and M54564FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
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M54564P/FP
500mA
M54564P
M54564FP
500mA)
pnp 8 transistor array ttl
18P4G
20P2N-A
pnp 8 transistor array
npn 8 transistor array
high voltage high current darlington array 18
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2SA505
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA505 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -50V (Min.) ·Collector-Emitter Saturation VoltageVCE(sat)= -0.8V (Max.)@ IC= -500mA APPLICATIONS ·Designed for medium power amplifier applications.
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2SA505
-500mA
-500mA;
-50mA
-50mA;
-800mA;
-10mA;
2SA505
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Untitled
Abstract: No abstract text available
Text: UTC 2N4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS* Ta=25°C, unless otherwise specified
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2N4403
2N4403
500mA.
-10mA
QW-R201-053
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