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    PNP TRANSISTOR B9D Search Results

    PNP TRANSISTOR B9D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR B9D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    B9D TRANSISTOR

    Abstract: PNP Transistor b9d transistor B9C B9C transistor PNP Epitaxial Silicon Transistor sot-23 S8550LT1 hfe pnp transistor 500ma 40v pnp sot23/B9C transistor
    Text: S8550LT1 PNP EPITAXIAL SILICON TRANSISTORS HIGH VOLTAGE TRANSISTOR: PNP SOT— —23 FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW（Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V 1. BASE 2. EMITTER 3. COLLECTOR


    Original     		S8550LT1 OT--23 225mWTamb 150mA 500mA 500mA, B9D TRANSISTOR PNP Transistor b9d transistor B9C B9C transistor PNP Epitaxial Silicon Transistor sot-23 S8550LT1 hfe pnp transistor 500ma 40v pnp sot23/B9C transistor PDF

    B9D TRANSISTOR

    Abstract: PNP Transistor b9d SOT-23 marking B9D transistor B9C marking b9d sot-23 Marking B9C MARKING B9E HMBT8550 MARKING B9C HMBT8050
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. Features SOT-23 • High DC Current: hFE=150-400 at IC=150mA


    Original     		HE6813 HMBT8550 HMBT8550 OT-23 150mA HMBT8050 B9D TRANSISTOR PNP Transistor b9d SOT-23 marking B9D transistor B9C marking b9d sot-23 Marking B9C MARKING B9E MARKING B9C HMBT8050 PDF

    B9D TRANSISTOR

    Abstract: PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 HMBT8550 B9C MARK B9C transistor sot-23 Marking B9C
    Text: HI-SINCERITY Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current: hFE=150-400 at IC=150mA


    Original     		HE6813 HMBT8550 HMBT8550 OT-23 150mA HMBT8050 183oC 217oC 260oC B9D TRANSISTOR PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 B9C MARK B9C transistor sot-23 Marking B9C PDF

    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


    OCR Scan     		AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300 PDF

    TDA7378

    Abstract: TDA7378-25 A7374B FZ T 834 tda audio vs 50v ap 7302 b 3000U
    Text: /= 7 ^ 7#. S G S -T H O M S O N K Æ D M tE ü i » * © TD A7374B DUAL BRIDGE AUDIO AMPLIFIER FOR CAR RADIO . • ■ ■ ■ ■ . ■ MINIMUM EXTERNAL COMPONENT!- COUNTT NO BOOTSTRAP CAPACITORS NO BOUCHEROT CELLS CLIP DETECTOR OUTPUT HIGH OUTPUT POWER


    OCR Scan     		A7374B MULTIWATT15 TDA7374BV TDA7374B TDA7378 TDA7378-25 A7374B FZ T 834 tda audio vs 50v ap 7302 b 3000U PDF

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 PDF

    M6800 programming manual

    Abstract: PIR based human motion DETECTOR CIRCUIT DIAGRAM MC6820 PIA mcm6830 BURROUGHS self scan car ecu microprocessors DVD CD 5888 CB MC6810 IP 8082 BL 4013 FLIP FLOP APPLICATION DIAGRAMS
    Text: MOTOROLA M 6800 Microprocessor Appi i cat i ons Manual B e n c h m a r k F a m ily F o r M ic r o c o m p u t e r S y s te m s I I I tlß i by C om puter A p p lic a tio n s Engineering M OTOROLA S e m ic o n d u c to r Products Inc. M6800 APPLICATION MANUAL


    OCR Scan     		1B800 M6800 M6800 programming manual PIR based human motion DETECTOR CIRCUIT DIAGRAM MC6820 PIA mcm6830 BURROUGHS self scan car ecu microprocessors DVD CD 5888 CB MC6810 IP 8082 BL 4013 FLIP FLOP APPLICATION DIAGRAMS PDF