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    PNP TRANSISTOR OSCILLATOR CIRCUIT Search Results

    PNP TRANSISTOR OSCILLATOR CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR OSCILLATOR CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BF506

    Abstract: No abstract text available
    Text: leiizu ^E.mi-C-ondu.cko'i O^ioaueti, Una. CX !_/ TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 BF506 FAX: (973) 376-8960 SILICON PLANAR PNP VHP OSCILLATOR MIXER The BF 506 is a silicon planar epitaxial PNP transistor in Jedec TO-92 plastic package.


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    BF506 BF506 PDF

    581 transistor motorola

    Abstract: 581 transistor motorola device data TO-236-AA MMBR4957 MMBR4957LT1 MMBR4957L
    Text: MOTOROLA Order this document by MMBR4957LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon MMBR4957LT1, T3 High-Frequency Transistor . . . designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount


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    MMBR4957LT1/D MMBR4957LT1, MMBR4957LT1/D* 581 transistor motorola 581 transistor motorola device data TO-236-AA MMBR4957 MMBR4957LT1 MMBR4957L PDF

    2N5160

    Abstract: No abstract text available
    Text: me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 2N5160 The RF Line PNP SILICON AMPLIFIER TRANSISTOR PNP SILICON RF POWER TRANSISTORS . . . designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment, Suitable for use as Class A,


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    2N5160 2N3866 400-MHz -30nH. -10pF 2N5160 PDF

    2sa1778

    Abstract: 2SC4269
    Text: Ordering number:EN3481 PNP Epitaxial Planar Silicon Transistor 2SA1778 VHF Converter, Local Oscillator Applications Features Package Dimensions • High power gain PG=13dB typ ; f=0.4GHz . · High cutoff frequency (fT=1.2GHz typ). · Low Cob (Cob=1.0pF typ).


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    EN3481 2SA1778 2SC4269. 2SA1778] 2sa1778 2SC4269 PDF

    2sa1778

    Abstract: 2SC4269 ITR04642 ITR04643 ITR04644 c52f
    Text: Ordering number:ENN3481 PNP Epitaxial Planar Silicon Transistor 2SA1778 VHF Converter, Local Oscillator Applications Features Package Dimensions • High power gain PG=13dB typ ; f=0.4GHz . · High cutoff frequency (fT=1.2GHz typ). · Low Cob (Cob=1.0pF typ).


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    ENN3481 2SA1778 2SC4269. 2018B 2SA1778] 2sa1778 2SC4269 ITR04642 ITR04643 ITR04644 c52f PDF

    Untitled

    Abstract: No abstract text available
    Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz


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    TL1466I SLVS262 PDF

    Untitled

    Abstract: No abstract text available
    Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz


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    TL1466I SLVS262 PDF

    MS-026

    Abstract: TL1466I TL1466IPM TL1466IPMR TL1466IPMRG4
    Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz


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    TL1466I SLVS262 TL1466I MS-026 TL1466IPM TL1466IPMR TL1466IPMRG4 PDF

    audio output TRANSISTOR PNP

    Abstract: MS-026 TL1466I TL1466IPM TL1466IPMR
    Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz


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    TL1466I SLVS262 TL1466I audio output TRANSISTOR PNP MS-026 TL1466IPM TL1466IPMR PDF

    Untitled

    Abstract: No abstract text available
    Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz


    Original
    TL1466I SLVS262 PDF

    Untitled

    Abstract: No abstract text available
    Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz


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    TL1466I SLVS262 PDF

    CBC 557 C

    Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor
    Text: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB


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    PDF

    AFY42

    Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
    Text: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in


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    AFY42 AFY42 60106-Y BIfi03 U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B PDF

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700 PDF

    AF 239 S

    Abstract: AF 239 af239 Germanium power S 239 L siemens
    Text: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


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    23SbQS Q62701-F51 oro-20 F--05 AF239S AF 239 S AF 239 af239 Germanium power S 239 L siemens PDF

    AF139

    Abstract: OOQ405 mz 1540
    Text: ESC D • flE35t.05 0004056 T B IS IE G t n PNP Germanium RF Transistor AF139 -SIEMENS AKTIENGESELLSCHAF - ~ T ~ 3 I~ 0 7 for input stages, mixer and oscillator stages up to 8 6 0 M H z AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads


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    OOQ405Ã AF139 Q60106-X139 200MHz- A800MHZ- AF139 10lHHz OOQ405 mz 1540 PDF

    transistor 1548 b

    Abstract: AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power
    Text: 2SC D m û23SbQS 0004075 4 IS IE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF T - 3 I - 07 for output, mixer, and oscillator stages up to 9 0 0 M H z AF 2 39 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


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    235b05 GGMG72 Q62701-F51 -13Silâ CE-10 aa35b05 af239s transistor 1548 b AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power PDF

    581 transistor motorola

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR4957LT1 PNP Silicon High-Frequency Transistor . . . designed for high-gain, low-noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin-film circuits using surface mount


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    MMBR4957LT1 MMBR4957LT1 581 transistor motorola PDF

    AFY16

    Abstract: Germanium Transistor 71lb 21b22
    Text: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.


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    AFY16 AFY16 18A4DIN41876 Q60106 f-200 Germanium Transistor 71lb 21b22 PDF

    AF106

    Abstract: AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106
    Text: 5SC D • 023SbQS GGQHG47 S H S I E G ; PNP Germanium RF Transistor T '- lf- O l ' A F 106 SIEMENS A K T I E N G E S E L L S C H A F T 04047 D for input, mixer, and oscillator stages up to 260 MHz The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72


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    023SbOS GGGHG47 AF106 AKTIEN6ESELLSCHAF25C AF106 AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106 PDF

    germanium transistor pnp

    Abstract: Germanium germanium pnp XAI02 pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
    Text: MAZDA XAI02 R.F. TRANSISTOR Germanium PNP Junction Type _TEN TATIVE_ G EN ERA L The X A I0 2 is a pnp junction type tran sistor suitable fo r use as a frequency changer and/or oscillator on the medium and long wave bands. Th e elem ent of the tran sistor is herm e­


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    XAI02 germanium transistor pnp Germanium germanium pnp pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium PDF

    BF681

    Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
    Text: TELEFUNKEN ELECTRONIC IMI electronic flic D • fl'iSDO'îb 000525Ô 0 BF 681 ~r - CreativeTechnologies Silicon PNP BF Transistor Applications: UHF/VHF oscillator and mixer stages Features: • High power gain • High reverse attenuation • Low noise figure


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    T15/S54. ft-11 569-GS 000s154 hal66 if-11 BF681 telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL PDF

    transistor BF 506

    Abstract: bf506 wl SOT-23
    Text: TELEFUNKEN ELECTRONIC filC D • A'^QQ'Jb 0005513 'i ■ AL6G ^ 7 2 / ~ TTIdilFlLDMDSIKl electronic | B F 506 Creative Technologies * Silicon PNP RF Transistor Applications: Oscillator-, mixer and uncontrolled pre-amplifier stages up to 300 MHz Features: • Small feedback capacitance


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    569-GS transistor BF 506 bf506 wl SOT-23 PDF

    pm4020

    Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
    Text: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


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    23SbOS AF240 Q60106-X240 -13J5Ã TambS45Â -CC80 y12bl pm4020 AF279 p21b AF279S 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor PDF