BF506
Abstract: No abstract text available
Text: leiizu ^E.mi-C-ondu.cko'i O^ioaueti, Una. CX !_/ TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 BF506 FAX: (973) 376-8960 SILICON PLANAR PNP VHP OSCILLATOR MIXER The BF 506 is a silicon planar epitaxial PNP transistor in Jedec TO-92 plastic package.
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BF506
BF506
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581 transistor motorola
Abstract: 581 transistor motorola device data TO-236-AA MMBR4957 MMBR4957LT1 MMBR4957L
Text: MOTOROLA Order this document by MMBR4957LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon MMBR4957LT1, T3 High-Frequency Transistor . . . designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount
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MMBR4957LT1/D
MMBR4957LT1,
MMBR4957LT1/D*
581 transistor motorola
581 transistor motorola device data
TO-236-AA
MMBR4957
MMBR4957LT1
MMBR4957L
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2N5160
Abstract: No abstract text available
Text: me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 2N5160 The RF Line PNP SILICON AMPLIFIER TRANSISTOR PNP SILICON RF POWER TRANSISTORS . . . designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment, Suitable for use as Class A,
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2N5160
2N3866
400-MHz
-30nH.
-10pF
2N5160
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2sa1778
Abstract: 2SC4269
Text: Ordering number:EN3481 PNP Epitaxial Planar Silicon Transistor 2SA1778 VHF Converter, Local Oscillator Applications Features Package Dimensions • High power gain PG=13dB typ ; f=0.4GHz . · High cutoff frequency (fT=1.2GHz typ). · Low Cob (Cob=1.0pF typ).
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EN3481
2SA1778
2SC4269.
2SA1778]
2sa1778
2SC4269
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2sa1778
Abstract: 2SC4269 ITR04642 ITR04643 ITR04644 c52f
Text: Ordering number:ENN3481 PNP Epitaxial Planar Silicon Transistor 2SA1778 VHF Converter, Local Oscillator Applications Features Package Dimensions • High power gain PG=13dB typ ; f=0.4GHz . · High cutoff frequency (fT=1.2GHz typ). · Low Cob (Cob=1.0pF typ).
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ENN3481
2SA1778
2SC4269.
2018B
2SA1778]
2sa1778
2SC4269
ITR04642
ITR04643
ITR04644
c52f
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Untitled
Abstract: No abstract text available
Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz
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TL1466I
SLVS262
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Untitled
Abstract: No abstract text available
Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz
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TL1466I
SLVS262
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MS-026
Abstract: TL1466I TL1466IPM TL1466IPMR TL1466IPMRG4
Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz
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TL1466I
SLVS262
TL1466I
MS-026
TL1466IPM
TL1466IPMR
TL1466IPMRG4
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audio output TRANSISTOR PNP
Abstract: MS-026 TL1466I TL1466IPM TL1466IPMR
Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz
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TL1466I
SLVS262
TL1466I
audio output TRANSISTOR PNP
MS-026
TL1466IPM
TL1466IPMR
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Untitled
Abstract: No abstract text available
Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz
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TL1466I
SLVS262
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Untitled
Abstract: No abstract text available
Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz
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TL1466I
SLVS262
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CBC 557 C
Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor
Text: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB
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AFY42
Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
Text: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in
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AFY42
AFY42
60106-Y
BIfi03
U120
103MHZ
400M
GR22B
Germanium Transistor
Germanium mesa
SZ2B
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APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
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AF106
AF106
APC UPS CIRCUIT DIAGRAM rs 1500
APC UPS es 500 CIRCUIT DIAGRAM
APC UPS 650 CIRCUIT DIAGRAM
schematic diagram APC back ups XS 1000
TAA550
APC UPS CIRCUIT DIAGRAM
UPS APC rs 1000 CIRCUIT diagram
UPS APC rs 800 CIRCUIT diagram
APC Back ES 500 UPS circuit diagram
CIRCUIT DIAGRAM APC UPS 700
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AF 239 S
Abstract: AF 239 af239 Germanium power S 239 L siemens
Text: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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23SbQS
Q62701-F51
oro-20
F--05
AF239S
AF 239 S
AF 239
af239
Germanium power
S 239 L siemens
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AF139
Abstract: OOQ405 mz 1540
Text: ESC D • flE35t.05 0004056 T B IS IE G t n PNP Germanium RF Transistor AF139 -SIEMENS AKTIENGESELLSCHAF - ~ T ~ 3 I~ 0 7 for input stages, mixer and oscillator stages up to 8 6 0 M H z AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads
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OOQ405Ã
AF139
Q60106-X139
200MHz-
A800MHZ-
AF139
10lHHz
OOQ405
mz 1540
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transistor 1548 b
Abstract: AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power
Text: 2SC D m û23SbQS 0004075 4 IS IE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF T - 3 I - 07 for output, mixer, and oscillator stages up to 9 0 0 M H z AF 2 39 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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235b05
GGMG72
Q62701-F51
-13Silâ
CE-10
aa35b05
af239s
transistor 1548 b
AF239
AF 239 S
d 1548
Q62701-F51
af239s
AF 239
Germanium power
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581 transistor motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR4957LT1 PNP Silicon High-Frequency Transistor . . . designed for high-gain, low-noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin-film circuits using surface mount
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MMBR4957LT1
MMBR4957LT1
581 transistor motorola
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AFY16
Abstract: Germanium Transistor 71lb 21b22
Text: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.
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AFY16
AFY16
18A4DIN41876
Q60106
f-200
Germanium Transistor
71lb
21b22
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AF106
Abstract: AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106
Text: 5SC D • 023SbQS GGQHG47 S H S I E G ; PNP Germanium RF Transistor T '- lf- O l ' A F 106 SIEMENS A K T I E N G E S E L L S C H A F T 04047 D for input, mixer, and oscillator stages up to 260 MHz The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72
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023SbOS
GGGHG47
AF106
AKTIEN6ESELLSCHAF25C
AF106
AF108
oms 450
tlf 4 120 siemens
100MHZ
200MHZ
transistor pnp 30V 1A 1W
2sc 103 transistor
Germanium mesa
tlf 106
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germanium transistor pnp
Abstract: Germanium germanium pnp XAI02 pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
Text: MAZDA XAI02 R.F. TRANSISTOR Germanium PNP Junction Type _TEN TATIVE_ G EN ERA L The X A I0 2 is a pnp junction type tran sistor suitable fo r use as a frequency changer and/or oscillator on the medium and long wave bands. Th e elem ent of the tran sistor is herm e
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XAI02
germanium transistor pnp
Germanium
germanium pnp
pnp germanium transistor
germanium pnp transistor
siemens crt
EDISON
transistor germanium
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BF681
Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
Text: TELEFUNKEN ELECTRONIC IMI electronic flic D • fl'iSDO'îb 000525Ô 0 BF 681 ~r - CreativeTechnologies Silicon PNP BF Transistor Applications: UHF/VHF oscillator and mixer stages Features: • High power gain • High reverse attenuation • Low noise figure
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T15/S54.
ft-11
569-GS
000s154
hal66
if-11
BF681
telefun* transistor pnp bf 681
marking code transistor fb
transistor 6B
transistor bc 470
telefunken C80
v 681 Telefunken
power electronic transistor
TRANSISTOR BC 950
sot-23 Marking DL
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transistor BF 506
Abstract: bf506 wl SOT-23
Text: TELEFUNKEN ELECTRONIC filC D • A'^QQ'Jb 0005513 'i ■ AL6G ^ 7 2 / ~ TTIdilFlLDMDSIKl electronic | B F 506 Creative Technologies * Silicon PNP RF Transistor Applications: Oscillator-, mixer and uncontrolled pre-amplifier stages up to 300 MHz Features: • Small feedback capacitance
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569-GS
transistor BF 506
bf506
wl SOT-23
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pm4020
Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
Text: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads
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23SbOS
AF240
Q60106-X240
-13J5Ã
TambS45Â
-CC80
y12bl
pm4020
AF279
p21b
AF279S
900 mhz germanium diode
Germanium
Q60106-X240
S400
d 1556 transistor
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