PN102F
Abstract: PNZ102F
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo
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2002/95/EC)
PNZ102F
PN102F)
PN102F
PNZ102F
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PN102F
Abstract: PNZ102F
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2 Low dark current: ICEO = 5 nA (typ.) Fast response: tr , tr = 3 µs (typ.)
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2002/95/EC)
PNZ102F
PN102F)
PN102F
PNZ102F
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. M Di ain sc te on na tin nc ue e/ d 4.5±0.2 Low dark current: ICEO = 5 nA (typ.)
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2002/95/EC)
PNZ102F
PN102F)
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ102F PN102F Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2 Low dark current: ICEO = 5 nA (typ.) Fast response: tr , tr = 3 µs (typ.) Wide directivity characteristics
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PNZ102F
PN102F)
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circuit LX-700
Abstract: PNA1401LF PNZ102F
Text: Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors Unit : mm PNA1401LF ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA typ.
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PNA1401LF,
PNZ102F
PNA1401LF
PNZ102F)
2856K
circuit LX-700
PNA1401LF
PNZ102F
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2 Low dark current: ICEO = 5 nA (typ.) Fast response: tr , tr = 3 µs (typ.)
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2002/95/EC)
PNZ102F
PN102F)
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PNA1401LF
Abstract: PNZ102F
Text: Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors Unit : mm PNA1401LF ø4.6±0.15 M Di ain sc te on na tin nc ue e/ d 4.5±0.2 For optical control systems Features 12.7 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l
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PNA1401LF,
PNZ102F
PNA1401LF
PNA1401LF
PNZ102F
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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