Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108 (PN108) Silicon planar type For optical control systems • Features Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll
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2002/95/EC)
PNZ108
PN108)
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin
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PNZ108CL
PN108CL)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use
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2002/95/EC)
PNZ108CL
PN108CL)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3-φ0.43±0.05 M Di ain sc te on na tin nc ue e/ d 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use
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2002/95/EC)
PNZ108CL
PN108CL)
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PN107
Abstract: PN108 PNZ0108 PNZ107 PNZ108
Text: Phototransistors PNZ107, PNZ108 PN107, PN108 Silicon NPN Phototransistors PNZ107 Unit : mm 4.6 0.15 Glass lens 6.3 0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.)
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PNZ107,
PNZ108
PN107,
PN108)
PNZ107
PNZ0108)
30nductor
PN107
PN108
PNZ0108
PNZ107
PNZ108
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PN107F
Abstract: PN108F PNZ107F PNZ108F
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems
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2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PAZ107F
PNZ108F)
MTGFR102-001
PN107F
PN108F
PNZ107F
PNZ108F
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PN107F
Abstract: PN108F PNZ107F PNZ108F Lx 3c paz1
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F φ4.6±0.15 M Di ain sc te on na tin nc ue e/ d 12.7 min. For optical control systems • Features 3° 1. 0± 0.
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2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PAZ107F
MTGFR102-001
PAZ108F
PN107F
PN108F
PNZ107F
PNZ108F
Lx 3c
paz1
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pnz108cl
Abstract: PN108CL K50010
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type For optical control systems • Features High sensitivity: IL = 3.5 mA (min.) Narrow directivity characteristics for effective use of light input
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2002/95/EC)
PNZ108CL
PN108CL)
pnz108cl
PN108CL
K50010
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PN108
Abstract: PNZ108
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108 (PN108) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2002/95/EC)
PNZ108
PN108)
PN108
PNZ108
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PN108CL
Abstract: PNZ108CL LX208
Text: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin • Small size (low in height) package
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PNZ108CL
PN108CL)
PN108CL
PNZ108CL
LX208
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paz1
Abstract: No abstract text available
Text: Phototransistors PNZ107F PN107F , PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems • Wide directivity characteristics for easy use
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PNZ107F
PN107F)
PNZ108F
PN108F)
PNZ108F)
PAZ107F
paz1
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PDF
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ107 PN107 , PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.) • Narrow directivity characteristics for effective use of light input
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PNZ107
PN107)
PNZ108
PN108)
PNZ108)
PAZ107
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.)
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2002/95/EC)
PNZ108CL
PN108CL)
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PNZ108CL
Abstract: 201 photo DSA003716
Text: Phototransistors PNZ108CL Silicon NPN Phototransistor Unit : mm 3.0±0.3 For optical control systems 12.7 min. 2.0±0.1 0.2±0.05 Features High sensitivity : ICE L = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use 3-ø0.45±0.05 Fast response : tr = 5 µs (typ.)
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PNZ108CL
2856K
PNZ108CL
201 photo
DSA003716
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PNZ107F
Abstract: PNZ108F LX400
Text: Phototransistors PNZ107F, PNZ108F Silicon NPN Phototransistors Unit : mm PNZ107F ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Wide directional sensitivity for easy use
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PNZ107F,
PNZ108F
PNZ107F
PNZ108F)
PNZ107F
PNZ108F
LX400
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pnz108cl
Abstract: PN108CL
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2002/95/EC)
PNZ108CL
PN108CL)
pnz108cl
PN108CL
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PN107F
Abstract: PN108F PNZ107F PNZ108F
Text: Phototransistors PNZ107F, PNZ108F PN107F, PN108F Silicon NPN Phototransistors Unit : mm PNZ107F ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Wide directional sensitivity for easy use
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PNZ107F,
PNZ108F
PN107F,
PN108F)
PNZ107F
PNZ108F)
PN107F
PN108F
PNZ107F
PNZ108F
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PDF
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PNZ108
Abstract: PN107 PN108 PNZ107
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107), PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.)
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Original
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2002/95/EC)
PNZ107
PN107)
PNZ108
PN108)
PAZ107
PNZ108)
MTGLR102-001
PNZ108
PN107
PN108
PNZ107
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F 4.5±0.2 • Features 2.45±0.25 2 0. di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo
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2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PAZ107F
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems
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2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PNZ108F)
PAZ107F
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PDF
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phototransistors
Abstract: No abstract text available
Text: Phototransistors PNZ107, PNZ108 Silicon NPN Phototransistors PNZ107 Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs typ. 12.7 min. High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx)
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Original
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PNZ107,
PNZ108
PNZ107
PNZ0108)
phototransistors
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107), PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.)
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Original
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2002/95/EC)
PNZ107
PN107)
PNZ108
PN108)
PNZ108)
PAZ107
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PDF
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PN108CL
Abstract: PNZ108CL
Text: Phototransistors PNZ108CL PN108CL Silicon NPN Phototransistor Unit : mm 3.0±0.3 For optical control systems 12.7 min. 2.0±0.1 0.2±0.05 Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use 3-ø0.45±0.05
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PNZ108CL
PN108CL)
PN108CL
PNZ108CL
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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