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    Panasonic Electronic Components PNZ108

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    Panasonic Electronic Components PNZ108F

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    Panasonic Electronic Components PNZ108CL

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    Panasonic Electronic Components PNZ108CLR

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    PNZ108 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PNZ108 Panasonic Silicon NPN Phototransistors Original PDF
    PNZ108 Panasonic Phototransistors Original PDF
    PNZ108CL Panasonic Silicon NPN Phototransistor Original PDF
    PNZ108CL Panasonic Silicon NPN Phototransistor Original PDF
    PNZ108CLR Panasonic Electronic Components Sensors, Transducers - Optical Sensors - Phototransistors - NPN PHOTOTRANS 900NM TO-18 SMALL Original PDF
    PNZ108CLS Panasonic Electronic Components Sensors, Transducers - Optical Sensors - Phototransistors - NPN PHOTOTRANS 900NM TO-18 SMALL Original PDF
    PNZ108F Panasonic Silicon NPN Phototransistors Original PDF
    PNZ108F Panasonic Silicon NPN Phototransistors Original PDF

    PNZ108 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108 (PN108) Silicon planar type For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll


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    PDF 2002/95/EC) PNZ108 PN108)

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin


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    PDF PNZ108CL PN108CL)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use


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    PDF 2002/95/EC) PNZ108CL PN108CL)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3-φ0.43±0.05 M Di ain sc te on na tin nc ue e/ d 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use


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    PDF 2002/95/EC) PNZ108CL PN108CL)

    PN107

    Abstract: PN108 PNZ0108 PNZ107 PNZ108
    Text: Phototransistors PNZ107, PNZ108 PN107, PN108 Silicon NPN Phototransistors PNZ107 Unit : mm 4.6 0.15 Glass lens 6.3 0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.)


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    PDF PNZ107, PNZ108 PN107, PN108) PNZ107 PNZ0108) 30nductor PN107 PN108 PNZ0108 PNZ107 PNZ108

    PN107F

    Abstract: PN108F PNZ107F PNZ108F
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems


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    PDF 2002/95/EC) PNZ107F PN107F) PNZ108F PN108F) PAZ107F PNZ108F) MTGFR102-001 PN107F PN108F PNZ107F PNZ108F

    PN107F

    Abstract: PN108F PNZ107F PNZ108F Lx 3c paz1
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F φ4.6±0.15 M Di ain sc te on na tin nc ue e/ d 12.7 min. For optical control systems • Features 3° 1. 0± 0.


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    PDF 2002/95/EC) PNZ107F PN107F) PNZ108F PN108F) PAZ107F MTGFR102-001 PAZ108F PN107F PN108F PNZ107F PNZ108F Lx 3c paz1

    pnz108cl

    Abstract: PN108CL K50010
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type For optical control systems • Features  High sensitivity: IL = 3.5 mA (min.)  Narrow directivity characteristics for effective use of light input


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    PDF 2002/95/EC) PNZ108CL PN108CL) pnz108cl PN108CL K50010

    PN108

    Abstract: PNZ108
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108 (PN108) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


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    PDF 2002/95/EC) PNZ108 PN108) PN108 PNZ108

    PN108CL

    Abstract: PNZ108CL LX208
    Text: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin • Small size (low in height) package


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    PDF PNZ108CL PN108CL) PN108CL PNZ108CL LX208

    paz1

    Abstract: No abstract text available
    Text: Phototransistors PNZ107F PN107F , PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems • Wide directivity characteristics for easy use


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    PDF PNZ107F PN107F) PNZ108F PN108F) PNZ108F) PAZ107F paz1

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ107 PN107 , PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.) • Narrow directivity characteristics for effective use of light input


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    PDF PNZ107 PN107) PNZ108 PN108) PNZ108) PAZ107

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.)


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    PDF 2002/95/EC) PNZ108CL PN108CL)

    PNZ108CL

    Abstract: 201 photo DSA003716
    Text: Phototransistors PNZ108CL Silicon NPN Phototransistor Unit : mm 3.0±0.3 For optical control systems 12.7 min. 2.0±0.1 0.2±0.05 Features High sensitivity : ICE L = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use 3-ø0.45±0.05 Fast response : tr = 5 µs (typ.)


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    PDF PNZ108CL 2856K PNZ108CL 201 photo DSA003716

    PNZ107F

    Abstract: PNZ108F LX400
    Text: Phototransistors PNZ107F, PNZ108F Silicon NPN Phototransistors Unit : mm PNZ107F ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Wide directional sensitivity for easy use


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    PDF PNZ107F, PNZ108F PNZ107F PNZ108F) PNZ107F PNZ108F LX400

    pnz108cl

    Abstract: PN108CL
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


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    PDF 2002/95/EC) PNZ108CL PN108CL) pnz108cl PN108CL

    PN107F

    Abstract: PN108F PNZ107F PNZ108F
    Text: Phototransistors PNZ107F, PNZ108F PN107F, PN108F Silicon NPN Phototransistors Unit : mm PNZ107F ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Wide directional sensitivity for easy use


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    PDF PNZ107F, PNZ108F PN107F, PN108F) PNZ107F PNZ108F) PN107F PN108F PNZ107F PNZ108F

    PNZ108

    Abstract: PN107 PN108 PNZ107
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107), PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.)


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    PDF 2002/95/EC) PNZ107 PN107) PNZ108 PN108) PAZ107 PNZ108) MTGLR102-001 PNZ108 PN107 PN108 PNZ107

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F 4.5±0.2 • Features 2.45±0.25 2 0. di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo


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    PDF 2002/95/EC) PNZ107F PN107F) PNZ108F PN108F) PAZ107F

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems


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    PDF 2002/95/EC) PNZ107F PN107F) PNZ108F PN108F) PNZ108F) PAZ107F

    phototransistors

    Abstract: No abstract text available
    Text: Phototransistors PNZ107, PNZ108 Silicon NPN Phototransistors PNZ107 Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs typ. 12.7 min. High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx)


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    PDF PNZ107, PNZ108 PNZ107 PNZ0108) phototransistors

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107), PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.)


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    PDF 2002/95/EC) PNZ107 PN107) PNZ108 PN108) PNZ108) PAZ107

    PN108CL

    Abstract: PNZ108CL
    Text: Phototransistors PNZ108CL PN108CL Silicon NPN Phototransistor Unit : mm 3.0±0.3 For optical control systems 12.7 min. 2.0±0.1 0.2±0.05 Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use 3-ø0.45±0.05


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    PDF PNZ108CL PN108CL) PN108CL PNZ108CL

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent