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    PO25C Price and Stock

    Viking Electric CPO25CT/2J4W4

    COMPLIANT PIN CARD-EDGE 100 X 200 GRID
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    CDM Electronics CPO25CT/2J4W4
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    Viking Electric CPO25CT/2J4S2

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    Viking Electric CPO25CT/2J4W2

    COMPLIANT PIN CARD-EDGE 100 X 200 GRID
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    Viking Electric CPO25CT/2J3W4

    COMPLIANT PIN CARD-EDGE 100 X 200 GRID
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    Viking Electric CPO25CT/2J3S2

    COMPLIANT PIN CARD-EDGE 100 X 200 GRID
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    PO25C Datasheets Context Search

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    BUK545-50A

    Abstract: 1E05 BUK545 BUK545-50B
    Text: N AMER PHILIPS/DISCRETE 5 SE D • fc.hS3T31 DDEOSTQ 4 ■ PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r - 3 7 -< 0 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF h53T31 BUK545-50A BUK545-50B BUK545 ID/100 1E05 BUK545-50B

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK543-60A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		PDF BUK543-60A/B BUK543

    transistor 746

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION N-channe! enhancement mode logic level fietd-effect power transistor in a plastic full-pack


    OCR Scan     		PDF BUK545-60A/B BUK545 transistor 746

    BUK454-400B

    Abstract: BUK454-400A T0220AB
    Text: 2 SE D N AMER PHI LIP S/DISCRET E ^53*131 ODSQMbO 2 B U K 454-400A B U K 454-400B P o w erM O S tra n s isto r r - 3 ? -n GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK454 -400A -400B T0220AB; BUK454-400B BUK454-400A T0220AB

    BUK637-600A

    Abstract: BUK637-600B BUK637-600C
    Text: Philips Components BUK637-600A BUK637-600B BUK637-600C PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode,


    OCR Scan     		PDF BUK637-600A BUK637-600B BUK637-600C BUK637 -600A -600B -600C BUK637-600A BUK637-600B BUK637-600C

    BUK452-50A

    Abstract: BUK452-50B T0220AB
    Text: N AMER PHI LIP S/ DI SCRETE btS3*131 002DM3Ü 4 2SE D BUK452-50A BUK452-50B PowerMOS transistor T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 002D43G BUK452-50A BUK452-50B BUK452 ID/100 T0220AB

    T3D DIODE

    Abstract: T3D 45 diode T3D 55 diode T3D 18 DIODE Diode T3D 03 Diode T3D 35 dt t3d 13 BUK552 BUK552-100A BUK552-100B
    Text: N AUER PHILIPS/DISCRETE blE D • bbSBTBl 0Q3D7AS T3Ü ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		PDF 0D307flS BUK552-100A/B T0220AB BUK552 -100A -100B T3D DIODE T3D 45 diode T3D 55 diode T3D 18 DIODE Diode T3D 03 Diode T3D 35 dt t3d 13 BUK552-100A BUK552-100B

    TRANSISTOR BU2520DF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.


    OCR Scan     		PDF BU2520DF Pq/PO25C TRANSISTOR BU2520DF