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    POWER AMPLIFIER 15 GHZ DB DBM Search Results

    POWER AMPLIFIER 15 GHZ DB DBM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    POWER AMPLIFIER 15 GHZ DB DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    15 GHz high power amplifier

    Abstract: TA021-035-32-15 HC51 power amplifier 15 GHz dB dBm
    Text: TA021-035-32-15 REV1_20040412 2.1 - 3.5 GHz 15 dBm Amplifier FEATURES • P-1 dB: 15 dBm • NF : 2.2 dB • Small Signal Gain: 32 dB DESCRIPTION The TA021-035-32-15 is a 15 dBm medium power amplifier designed for operation in the 2.1 to 3.5 GHz frequency range. This amplifier provides high gain and low noise figure. High efficiency operation is achieved


    Original     		PDF TA021-035-32-15 TA021-035-32-15 15 GHz high power amplifier HC51 power amplifier 15 GHz dB dBm

    Untitled

    Abstract: No abstract text available
    Text: SLNA-180-30-35-SMA DATA SHEET 500 MHz to 18 GHz, Medium Power Broadband Amplifier with 15 dBm, 33 dB Gain and SMA SLNA-180-30-35-SMA is a 15 dBm power amplifier designed for operation in the 0.5 GHz to 18 GHz frequency range. The amplifier utilizes high power devices that


    Original     		PDF SLNA-180-30-35-SMA SLNA-180-30-35-SMA 12Volts, 220mA) -broadband-amplifier-slna-180-30-35-sma-p

    Untitled

    Abstract: No abstract text available
    Text: HMC407MS8G v00.0701 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 5.0 - 7.0 GHz applications: Gain: 15 dB Saturated Power: +29 dBm


    Original     		PDF HMC407MS8G HMC407MS8G

    Untitled

    Abstract: No abstract text available
    Text: HMC-C021 v01.0906 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation ypical Applications Typical Regulated Supply and Bias Sequencing


    Original     		PDF HMC-C021 HMC-C020 HMC-C021

    HMMC-5003

    Abstract: agilent HMMC
    Text: 4 GHz Wideband Preamplifier/Amplifier Technical Data HMMC-5003 Features • Frequency Range: DC – 4 GHz • Flat Response: ±0.75 dB 5 MHz – 4 GHz • High Gain: 11 dB • High Isolation: -37 dB • Return Loss: Input -15 dB Output -15 dB • High Power Output:


    Original     		PDF HMMC-5003 HMMC-5003 5968-4445E agilent HMMC

    schematic diagram 32 VDC POWER SUPPLY

    Abstract: HMC-C020 HMC-C021
    Text: HMC-C021 v01.0906 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz CONNECTORIZED MODULES - AMPLIFIERS 9 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation ypical Applications Typical Regulated Supply and Bias Sequencing


    Original     		PDF HMC-C021 HMC-C020 HMC-C021 schematic diagram 32 VDC POWER SUPPLY

    Untitled

    Abstract: No abstract text available
    Text: HMC-C021 v03.0310 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing Hermetically Sealed Module


    Original     		PDF HMC-C021 HMC-C020 HMC-C021 231CCSF

    HMC-C020

    Abstract: HMC-C021
    Text: HMC-C021 v01.0906 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing Hermetically Sealed Module


    Original     		PDF HMC-C021 HMC-C020 HMC-C021

    microwave amplifier 2.4 ghz 10 watts

    Abstract: isolator 2 2.1 GHz
    Text: HMC-C008 v03.1205 AMPLIFIERS - CONNECTORIZED MODULES 16 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected


    Original     		PDF HMC-C008 HMC-C008 6061-T6 MIL-C-5541, HMC-C008HV115 HMC-C008HV230 microwave amplifier 2.4 ghz 10 watts isolator 2 2.1 GHz

    circulator 2.3 2.7 GHz

    Abstract: HMC-C008 2 Watt rf Amplifier 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 15 watt power supply circuit diagram
    Text: HMC-C008 v05.1007 CONNECTORIZED MODULES - AMPLIFIERS 9 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected


    Original     		PDF HMC-C008 HMC-C008 MIL-C-5541, HMC-C008HV115 HMC-C008HV230 circulator 2.3 2.7 GHz 2 Watt rf Amplifier 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 15 watt power supply circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: HMC-C021 v00.0606 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing Hermetically Sealed Module


    Original     		PDF HMC-C021 HMC-C020 HMC-C021

    2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM HMC-C008 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM microwave isolator 15 watt power supply circuit diagram
    Text: HMC-C008 v03.1205 AMPLIFIERS - CONNECTORIZED MODULES 9 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected


    Original     		PDF HMC-C008 HMC-C008 MIL-C-5541, HMC-C008HV115 HMC-C008HV230 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM microwave isolator 15 watt power supply circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: HMC-C021 v04.0711 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz amplifiers 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing Hermetically Sealed Module


    Original     		PDF HMC-C021 HMC-C020 HMC-C021 231CCSF

    chip 66 low noise amplifier

    Abstract: No abstract text available
    Text: HMC462 v00.0703 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT P1dB Output Power: +15 dBm @ 10 GHz


    Original     		PDF HMC462 HMC462 025mm chip 66 low noise amplifier

    Untitled

    Abstract: No abstract text available
    Text: HMC462 v00.0703 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT P1dB Output Power: +15 dBm @ 10 GHz


    Original     		PDF HMC462 HMC462 025mm

    Untitled

    Abstract: No abstract text available
    Text: 15 dBm P1dB, 500 MHz to 18 GHz, Medium Power Broadband Amplifier, 33 dB Gain, SMA TECHNICAL DATA SHEET PE15A3263 The PE15A3263 is a 15 dBm power amplifier designed for operation in the 0.5 GHz to 18 GHz frequency range. The amplifier utilizes high power devices that provide excellent linearity and high gain. High efficiency operation is achieved by using hybrid


    Original     		PDF PE15A3263 PE15A3263 band-amplifier-33-db-gain-sma-pe15a3263-p

    isolator 2 2.1 GHz

    Abstract: No abstract text available
    Text: OBSOLETE PRODUCT HMC-C008 v05.1007 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz AMPLFIERS Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected TTL DC Power Enable


    Original     		PDF HMC-C008 HMC-C008 6061-T6 MIL-C-5541, HMC-C008HV115 HMC-C008HV230 isolator 2 2.1 GHz

    isolator 2 2.1 GHz

    Abstract: No abstract text available
    Text: HMC-C008 v05.1007 AMPLIFIERS 1 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected TTL DC Power Enable Unconditionally Stable


    Original     		PDF HMC-C008 HMC-C008 6061-T6 MIL-C-5541, HMC-C008HV115 HMC-C008HV230 isolator 2 2.1 GHz

    2.4 GHz rf amplifier 100w

    Abstract: 50 watt amplifier circuit diagram 15 watt power supply circuit diagram HMC-C008 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 20 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
    Text: HMC-C008 v04.0906 AMPLIFIERS 1 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected TTL DC Power Enable Unconditionally Stable


    Original     		PDF HMC-C008 HMC-C008 6061-T6 MIL-C-5541, HMC-C008HV115 HMC-C008HV230 2.4 GHz rf amplifier 100w 50 watt amplifier circuit diagram 15 watt power supply circuit diagram 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 20 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Untitled

    Abstract: No abstract text available
    Text: HMC-C021 v04.0711 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing The HMC-C020 Wideband PA is ideal for:


    Original     		PDF HMC-C021 HMC-C020 HMC-C021 231CCSF

    DB815

    Abstract: UPC2708 UPC2708T UPC2708T-E3 UPC2711 UPC2711T UPC2711T-E3
    Text: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES UPC2708T UPC2711T GAIN vs. FREQUENCY 20 • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T UPC2708 15 Gain, GS (dB) • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN


    Original     		PDF UPC2708T UPC2711T UPC2708T) UPC2708 UPC2711 UPC2708T UPC2711T UPC2708T-E3 UPC2711T-E3 DB815 UPC2708 UPC2708T-E3 UPC2711 UPC2711T-E3

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs Chip Form Features • High power - PidB = 24 dBm a tf = 15 GHz • High gain - G-|dB —8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8851

    S8851

    Abstract: S885T
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8851 TECHNICAL DATA FEATURES: • HIGH POWER P^dB“ 24 dBm at f = 15 GHz ■ ■ HIGH GAIN G1dB = 8 dB ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF S8851 S885T 15GHz S8851 S885T

    S8855

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8855 TECHNICAL DATA FEATURES: • ■ HIGH POWER p1 d B ~ 31.5 dBm at f = 15 GHz HIGH GAIN G|dB = 6.5 dB at f = 15 GHz SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		PDF S8855 15GHz -S8855- S8855