Untitled
Abstract: No abstract text available
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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2SA1987
2SC5359
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Untitled
Abstract: No abstract text available
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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2SA1987
2SC5359
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Untitled
Abstract: No abstract text available
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C
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2SC5359
2SA1987
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transistor 2SC5359
Abstract: 100-W 2-21F1A 2SA1987 2SC5359
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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2SA1987
2SC5359
transistor 2SC5359
100-W
2-21F1A
2SA1987
2SC5359
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2Sa1987
Abstract: No abstract text available
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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2SA1987
2SC5359
2-21F1A
2Sa1987
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Untitled
Abstract: No abstract text available
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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2SA1987
2SC5359
2-21F1A
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100-W
Abstract: 2-21F1A 2SA1987 2SC5359
Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
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Original
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2SA1987
2SC5359
100-W
2-21F1A
2SA1987
2SC5359
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Untitled
Abstract: No abstract text available
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C
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2SC5359
2SA1987
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transistor 2SC5359
Abstract: 2SC5359 100-W 2-21F1A 2SA1987
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C
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2SC5359
2SA1987
transistor 2SC5359
2SC5359
100-W
2-21F1A
2SA1987
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PDF
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transistor 2Sc5359
Abstract: 2SC5359 2SA1987 2SC5359 100-W 2-21F1A 2SA1987
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Maximum Ratings Tc = 25°C
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2SC5359
2SA1987
transistor 2Sc5359
2SC5359
2SA1987 2SC5359
100-W
2-21F1A
2SA1987
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PDF
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transistor 2SC5359
Abstract: 2SC5359
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C
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2SC5359
2SA1987
2-21F1A
transistor 2SC5359
2SC5359
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2SA1987 2SC5359
Abstract: 2SC5359 100W AUDIO AMPLIFIER 2SA1987
Text: Inchange Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage
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2SC5359
2SA1987
2SA1987 2SC5359
2SC5359
100W AUDIO AMPLIFIER
2SA1987
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transistor 2SC5359
Abstract: 2SC5359
Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C
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2SC5359
2SA1987
2-21F1A
transistor 2SC5359
2SC5359
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2SA1987 2SC5359
Abstract: 2SC5359 2SA1987 100W POWER AMPLIFIER 100w npn
Text: SavantIC Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage
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2SC5359
2SA1987
2SA1987 2SC5359
2SC5359
2SA1987
100W POWER AMPLIFIER
100w npn
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100W AUDIO ic AMPLIFIER
Abstract: 2SA1987 2SC5359 100w audio amplifier 2SA1987 2SC5359
Text: Inchange Semiconductor Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5359 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio
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2SA1987
2SC5359
-230V;
100W AUDIO ic AMPLIFIER
2SA1987
2SC5359
100w audio amplifier
2SA1987 2SC5359
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2SA1987 2SC5359
Abstract: 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359
Text: JMnic Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5359 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio frequency amplifier output stage
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2SA1987
2SC5359
-230V;
2SA1987 2SC5359
2SA1987
100W AUDIO ic AMPLIFIER
2SC5359
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2sa1987 transistor equivalent
Abstract: transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5359 APPLICATIONS
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2SA1987
-230V
2SC5359
-230V
2sa1987 transistor equivalent
transistor 2SC5359
2SC5359
power amplifier 2sc5359 2sa1987 TRANSISTOR
2SA1987 2SC5359
2SA1987
power transistor audio amplifier 100w
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transistor 2SC5359
Abstract: 2-21F1A 2SA1987 2SC5359 tr 2sA1987
Text: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 53.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SC5359
2SA1987
transistor 2SC5359
2-21F1A
2SA1987
2SC5359
tr 2sA1987
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transistor 2SC5359
Abstract: tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359
Text: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 20.5M AX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SC5359
2SA1987
transistor 2SC5359
tr 2sA1987
2SC5359
power amplifier 2sc5359 2sa1987 TRANSISTOR
2-21F1A
2SA1987
2SA1987 2SC5359
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transistor 2SC5359
Abstract: 2-21F1A 2SA1987 2SC5359 2SC53
Text: TOSHIBA 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO —230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SC5359
2SA1987
transistor 2SC5359
2-21F1A
2SA1987
2SC5359
2SC53
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SC5359
2SA1987
----L20
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transistor 2SC5359
Abstract: 2-21F1A 2SA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR
Text: 2SA1987 TO SH IBA 2 S A 1 987 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm High Collector Voltage : V 0 e q = - 23OV Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SA1987
2SC5359
transistor 2SC5359
2-21F1A
2SA1987
power amplifier 2sc5359 2sa1987 TRANSISTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 3 59 U nit in mm 3.3 + 0.2 2Q.5MAX • • • High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SC5359
2SA1987
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SA1987 2 S A 1 987 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = -2 3 0 V Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier
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2SA1987
2SC5359
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