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Abstract: No abstract text available
Text: APPLICATION NOTE SKY77354 Power Amplifier Module – Evaluation Board Information Applicability: SKY77354 Power Amplifier Module for Quad-Band GSM/ GPRS/ EDGE Introduction This Application Note provides the customer with information that will assist in the evaluation of the SKY77354 Power Amplifier
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SKY77354
EN40-D305-002)
GSM850/900,
DCS1800,
PCS1900.
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Abstract: No abstract text available
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip
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CGY2010G
CGY2010G
MGB764
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gsm signal amplifier
Abstract: Power Amplifier Module for GSM gsm 0308 DLT3202 GSM900 GSM RF module
Text: Preliminary DLT3202 3.5V Triple-Band Power Amplifier Module for GSM900 and DCS1800/PCS1900 Applications with Integrated Power Controller Description Features The DLT3202 is a triple-band Power Amplifier Module PAM designed for used as the final RF amplifier in GSM900 and
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DLT3202
GSM900
DCS1800/PCS1900
DLT3202
gsm signal amplifier
Power Amplifier Module for GSM
gsm 0308
GSM RF module
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DLT4204
Abstract: GSM900 gsm amplifier schematic
Text: Preliminary DLT4204 3.5V Quad-Band Power Amplifier Module for GSM850/900 and DCS1800/PCS1900 Applications with Integrated Power Controller Description Features The DLT4204 is a quad-band Power Amplifier Module PAM designed for used as the final RF amplifier in GSM850/900
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DLT4204
GSM850/900
DCS1800/PCS1900
DLT4204
GSM850/900
GSM900
gsm amplifier schematic
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33169/D MC33169 Advance Information GaAs Power Amplifier Support IC GaAs POWER AMPLIFIER SUPPORT IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This
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MC33169/D
MC33169
MC33169
MC33169/D*
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ftx 79
Abstract: GMSK applications GSM900
Text: AWT6172 GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.3 PRODUCT DESCRIPTION features This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier
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AWT6172
GSM850/900
ftx 79
GMSK applications
GSM900
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GaAs MESFET amplifier with high input impedance
Abstract: mesfet datasheet by motorola DCS1800 GSM900 MMM5062 PCS1900
Text: Fact Sheet Freescale Semiconductor, Inc. MMM5062 QUAD-BAND, SINGLE POWER SUPPLY, POWER AMPLIFIER MODULE Freescale Semiconductor, Inc. For GSM/GPRS Handsets The MMM5062 is a Quad-Band, Single Power Supply, Power Amplifier Module for use in GSM/GPRS cellular
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MMM5062
MMM5062
50-ohm
GSM850ed
MMM5062FACT/D
GaAs MESFET amplifier with high input impedance
mesfet datasheet by motorola
DCS1800
GSM900
PCS1900
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Abstract: No abstract text available
Text: Power Detection and Control For Mobile Handset Applications David Ripley Part 1. Power Amplifier Biasing for Power Control The power control requirements of the GSM/EDGE system pose significant challenges in the power amplifier design. Typical system requirements of 35 dB dynamic
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DCS 48 Delta
Abstract: DLT4203 GSM900 delta v dcs 153uA DCS delta
Text: Preliminary DLT4203 3.5V Quad-Band Power Amplifier Module for GSM850/900 and DCS1800/PCS1900 Applications with Integrated Power Controller Description Features The DLT4203 is a quad-band Power Amplifier Module PAM designed for use Integrated power control function
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DLT4203
GSM850/900
DCS1800/PCS1900
DLT4203
GSM850/900
DCS 48 Delta
GSM900
delta v dcs
153uA
DCS delta
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AWT0908S6
Abstract: 9024m AWT0908 SSOP-28 48V28
Text: A AWT0908 S6 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier IC DESCRIPTION The AWT0908 is a 3 stage monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power High Efficiency
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AWT0908
SSOP-28
AWT0908S6
9024m
SSOP-28
48V28
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Abstract: No abstract text available
Text: ACPM-7868 5 x 5 mm Power Amplifier Module Linear Quad-Band GSM/EDGE Data Sheet Description Features The ACPM-7868 is a linear quad-band / multi-mode power amplifier module for both GMSK and 8-PSK modulation schemes. There are two amplifier chains, one is to support
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ACPM-7868
ACPM-7868
GSM850/900
DCS1800/
PCS1900
AV02-2665EN
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smd diode HB
Abstract: BA891 CGY2014ATW HTSSOP20 philips application
Text: INTEGRATED CIRCUITS DATA SHEET CGY2014ATW GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Nov 28 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2014ATW FEATURES GENERAL DESCRIPTION
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CGY2014ATW
CGY2014ATW
403506/01/pp12
smd diode HB
BA891
HTSSOP20
philips application
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philips 561
Abstract: PCF5077T SSOP16 BGY2
Text: INTEGRATED CIRCUITS DATA SHEET PCF5077T Power amplifier controller for GSM and PCN systems Preliminary specification File under Integrated Circuits, IC17 1997 Nov 19 Philips Semiconductors Preliminary specification Power amplifier controller for GSM and PCN systems
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PCF5077T
SCA56
437027/1200/01/pp24
philips 561
PCF5077T
SSOP16
BGY2
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Abstract: No abstract text available
Text: TST0913 SiGe-Power Amplifier for GSM 1800/1900 DCS/PCS Description With a single supply voltage operation of 3 V and a neglectable leakage current in power-down mode, the TST0913 needs few external components. The TST0913 is a monolithic integrated power amplifier.
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TST0913
TST0913
1800/1900-MHz
PSSOP16
D-74025
20-May-99
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twl3011
Abstract: HB 541 Opt pam circuit gsm phone schematics BCM2121 CSP1093C DCS1800 GSM900 PCF50732 PCS1900
Text: Demonstration Board Documentation & Applications Note rev. F TQM7M4014 Quad-Band capable Power Amplifier Module – GSM850 / GSM900 / DCS1800 / PCS1900 1. DESCRIPTION This document describes the demonstration board for the TQM7M4014 Power Amplifier Module and includes the
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TQM7M4014
GSM850
GSM900
DCS1800
PCS1900
TQM7M4014
1880MHz
twl3011
HB 541
Opt pam circuit
gsm phone schematics
BCM2121
CSP1093C
PCF50732
PCS1900
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A00025
Abstract: 390R-5
Text: RF3805 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs HBT Linear Amplifier • Class AB Operation for GSM/EDGE/CDMA2000 • Power Amplifier Stage for Commercial Wireless Transmitter Applications Infrastructure
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RF3805
GSM/EDGE/CDMA2000
RF3805
EIA-481.
A00025
390R-5
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Untitled
Abstract: No abstract text available
Text: TST0912 SiGe Power Amplifier for GSM 900 Description With a single supply voltage operation of 3 V and a neglectable leakage current in power-down mode, the TST0912 needs few external components and reduces system costs. The TST0912 is a monolithic integrated power amplifier
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TST0912
TST0912
900-MHz
PSSOP16
D-74025
20-May-99
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120W amplifier
Abstract: SDM-09120 q458
Text: SDM-09120 Product Description 925-960 MHz Class AB 120W Power Amplifier Module The SDM-09120 120W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a
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SDM-09120
SDM-09120
AN054,
EDS-103478
120W amplifier
q458
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gsm transceiver
Abstract: PHILIPS databook MMIC BSR14 CGY2013G LQFP48 PHP212L SA1620 1210 pressure sensor ics
Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G FEATURES
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CGY2013G
CGY2013G
SCA50
437027/1200/02/pp12
gsm transceiver
PHILIPS databook MMIC
BSR14
LQFP48
PHP212L
SA1620
1210 pressure sensor ics
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Untitled
Abstract: No abstract text available
Text: RF COMPONENTS GSM HIGH POWER AMPLIFIER TYPE 760036-00000 This low cost high power amplifier is specifically designed for GSM base stations and test bench applications. Standard features include harmonic filtering, lightning protection of output, overheat protection, oversupply
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Abstract: No abstract text available
Text: U. 0614577 □□□G70T 720 kNhDIGICS AWT0908 TX POWER MMIC Your GaAs IC Source Advanced Product Information _R ov n 900 MHz Band GSM GaAs Power Amplifier IC DESCRIPTION The AWT0908X is a monolithic Power Amplifier
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AWT0908
AWT0908X
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Untitled
Abstract: No abstract text available
Text: AWT0904S6 E n w i g i TX POWER MMIC Advanced Product Information Rev 7 g 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0904 is a 3 stage monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply High Output Power
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AWT0904S6
AWT0904
SSOP-28
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
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Q62702G72
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SMD F09
Abstract: MMIC marking code U
Text: SIEMENS GaAs MMIC CGY94 Preliminary Datasheet * Power amplifier for GSM or AMPS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V * 2 W output power at 3.6 V * Overall power added efficiency 46 % * Input matched to 50 Q, simple output match
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CGY94
Q68000-A9124
577ms
SMD F09
MMIC marking code U
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