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    POWER AMPLIFIER SCHEMATIC DIAGRAM Search Results

    POWER AMPLIFIER SCHEMATIC DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    POWER AMPLIFIER SCHEMATIC DIAGRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAAP-015036

    Abstract: No abstract text available
    Text: MAAP-015036 Power Amplifier, 15 W 8.5 - 10.5 GHz Rev. V1 Features Functional Schematic •       15 W Power Amplifier 42 dBm Saturated Pulsed Output Power 17 dB Large Signal Gain PSAT >40% Power Added Efficiency Dual Sided Bias Architecture


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    PDF MAAP-015036 MIL-STD-883 MAAP-015036

    BC142

    Abstract: bc142 transistor transistor BC142
    Text: BC142 AUDIO AMPLIFIER DESCRIPTION The BC142 is a silicon planar epitaxial NPN transistor in a TO-39 metal case specially intented for use as driver in high power audio amplifier. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value


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    PDF BC142 BC142 bc142 transistor transistor BC142

    Untitled

    Abstract: No abstract text available
    Text: MAAP-015024 Power Amplifier, 8 W 14.5 - 17.5 GHz Rev. V3 Features •       Functional Schematic 8 W Power Amplifier 20 dB Small Signal Gain 39 dBm Saturated Pulsed Output Power Dual Sided Bias Architecture 100% On-wafer DC & RF Power Tested


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    PDF MAAP-015024 MIL-STD-833 MAAP-015024

    2N4427

    Abstract: BFR98 transistor 2N4427 2n4427-bfr98
    Text: 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications. TO-39 INTERNAL SCHEMATIC DIAGRAM


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    PDF 2N4427 BFR98 2N4427 BFR98 2N4427-BFR98 transistor 2N4427 2n4427-bfr98

    Untitled

    Abstract: No abstract text available
    Text: MJB44H11T4 Low voltage NPN power transistor Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Fast switching speed Applications • Power amplifier 3 1 • Switching circuits D2PAK Description Figure 1. Internal schematic diagram


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    PDF MJB44H11T4 MJB44H11 DocID022716

    FMA3058

    Abstract: FMA3058-000-WP capacitor 100nf 0301C Filtronic
    Text: FMA3058 Pilot Datasheet v2.5 2-20 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • FUNCTIONAL SCHEMATIC: 15dB Gain Low Noise Amplifier Single Supply Self Biased +5V @ 90mA 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control


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    PDF FMA3058 20GHz FMA3058 2-20GHz 22-A114. MIL-STD-1686 MILHDBK-263. FMA3058-000-WP capacitor 100nf 0301C Filtronic

    FMA3058

    Abstract: FMA3058-000-WP fma-3058
    Text: FMA3058 2-20 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • Pilot Datasheet v2.5 FUNCTIONAL SCHEMATIC: 15dB Gain Low Noise Amplifier Single Supply Self Biased +5V @ 90mA 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control


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    PDF FMA3058 20GHz FMA3058 2-20GHz 22-A114. MIL-STD-1686 MILHDBK-263. FMA3058-000-WP fma-3058

    Untitled

    Abstract: No abstract text available
    Text: FMA3058 2-20 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • Pilot Datasheet v2.4 FUNCTIONAL SCHEMATIC: 15dB Gain Low Noise Amplifier Single Supply Self Biased +5V @ 90mA 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control


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    PDF FMA3058 20GHz FMA3058 2-20GHz 22-A114. MIL-STD-1686 MILHDBK-263.

    and pin diagram of TIP35C

    Abstract: TIP35C transistor data sheet transistor tip35c tip35c equivalent TIP35C equivalents TIP35C-T3P-K TIP35C TIP36C TIP35CL
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM


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    PDF TIP35C TIP35C TIP36C. TIP35CL TIP35C-T3P-K TIP35CL-T3P-K QW-R214-013 and pin diagram of TIP35C TIP35C transistor data sheet transistor tip35c tip35c equivalent TIP35C equivalents TIP35C-T3P-K TIP36C TIP35CL

    transistor TIP36C

    Abstract: TIP35C equivalents TIP36C TIP35C
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C INTERNAL SCHEMATIC DIAGRAM


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    PDF TIP36C TIP36C TIP35C TIP36CL TIP36C-T3P-K TIP36CL-T3P-K QW-R214-014 transistor TIP36C TIP35C equivalents TIP35C

    schematics for a PA amplifier

    Abstract: TQM613025 design of multi section directional coupler TQM613026 qualcomm rft
    Text: TQM613026 Application Note Application Note for TQM613026 Power Amplifier-Duplexer Product TQM613026 TABLE OF CONTENTS • 1.0 Description • 2.0 Product Block Diagram and Operation • 3.0 Recommended Handset Schematic and Layout Considerations • 3.1 DC Block Recommendations


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    PDF TQM613026 TQM613026 schematics for a PA amplifier TQM613025 design of multi section directional coupler qualcomm rft

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C.  INTERNAL SCHEMATIC DIAGRAM


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    PDF TIP35C TIP35C TIP36C. TIP35CL-x-T3P-T TIP35CG-x-T3P-T QW-R214-013, QW-R214-013

    2N6668

    Abstract: No abstract text available
    Text: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM


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    PDF 2N6668 O-220 2N6668

    2N3114

    Abstract: P008B
    Text: 2N3114 HIGH VOLTAGE AMPLIFIER DESCRIPTION The 2N3114 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is primarily intended for high voltage, medium power applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol


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    PDF 2N3114 2N3114 P008B

    TIP35C

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C.  INTERNAL SCHEMATIC DIAGRAM


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    PDF TIP35C TIP35C TIP36C. TIP35CL-x-T3P-T TIP35CG-x-T3P-T TIP35CL-x-T3N-T TIP35CG-x-T3N-T QW-R214-013

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C.  INTERNAL SCHEMATIC DIAGRAM


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    PDF TIP36C TIP36C TIP35C. TIP36CL-x-T3P-T TIP36CL-x-T3N-T QW-R214-014

    gsm vco

    Abstract: bfr93aw schematic gsm 900 amplifier k 3531 transistor
    Text: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the


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    PDF EHT09097 EHT09123 EHT09124 gsm vco bfr93aw schematic gsm 900 amplifier k 3531 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C.  INTERNAL SCHEMATIC DIAGRAM


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    PDF TIP36C TIP36C TIP35C. TIP36CL-x-T3P-T TIP36CG-x-T3P-T QW-R214-014

    BFY50

    Abstract: BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52 BFY51I bfy50 cb
    Text: BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


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    PDF BFY50/51 BFY50 BFY52 BFY50 BFY51 BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY51I bfy50 cb

    amp_27006.0

    Abstract: No abstract text available
    Text: Category: Amplifiers CIRCUIT IDEAS FOR DESIGNERS Schematic no. amp_27006.0 Low Voltage Instrumentation Amplifier Description This circuit presents a low voltage instrumentation amplifier operating on +/-1V power supplies. This circuit is designed to amplify low level difference-mode signals over a common mode voltage range that may be


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    PDF 100K/50K) 500K/100K) amp_27006.0

    MA08506D

    Abstract: No abstract text available
    Text: MA08506D 8W Power Amplifier Die 9.5 - 10.5 GHz Advanced Information Features •= •= VDD VDD 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance •= Self-Aligned MSAG MESFET Process RF IN RF OUT VGG Functional Schematic Description Maximum Ratings (T


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    PDF MA08506D MA08506D

    15V 5A Power Supply Schematic

    Abstract: 850C TPA02 TPA02A THALER CORPORATION ATPA02
    Text: TPA02/ TPA02A Power Operational Amplifier THALER CORPORATION. Represented by: Rhopoint Components Ltd. www.rhopointcomponents.com FEATURES EQUIVALENT SCHEMATIC • COMMON COLLECTOR OUTPUT STAGE · CLOSE TO RAIL OUTPUT – ±1.2V TO RAIL · HIGH SLEW RATE – 20V/µsec.


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    PDF TPA02/ TPA02A 600ns 350kHz TPA02 TPA02A TPA02/02A 15V 5A Power Supply Schematic 850C THALER CORPORATION ATPA02

    IH33

    Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
    Text: Infineon fechnoiogies CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: High-Reliability CA3000 Slash-Serles Linear ICs CA3020A/. High-Reliability Multipurpose Wide-Band Power Amplifier The CA3020A Slash / Series types are supplied in the 12lead TO-5 style package. Schematic diagram. TABLE A. POST BURN-IN, FINAL ELECTRICAL AND GROUP A SAMPLING TESTS


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    PDF CA3000 CA3020A/. CA3020A 12lead 92LS-2