Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POWER AND MEDIUM POWER TRANSISTOR Search Results

    POWER AND MEDIUM POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    POWER AND MEDIUM POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TEA15xx-series

    Abstract: laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62
    Text: Application Note Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Philips Semiconductors 1.2/W97 TRAD Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Application Note Philips Semiconductors


    Original     		AN10117-01 2/W97 AN10116: AN10230: PMEG1020EA PMEG2010EA D-22529 TEA15xx-series laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62 PDF

    PCOT

    Abstract: BCW67f BCW66 bss65 BSV62 BCW65A BCW65B BCW65C BCW66F BCW66G
    Text: SOT-23 TABLE 2 -S IL IC O N PLANAR MEDIUM POWER TRANSISTORS Devices in this table are suitable for medium current, medium power sw itching and general purpose applications. Ratings and Characteristics at 25 °C ambient temperature. _ _ _ _ _ V /lavimnm □


    OCR Scan     		OT-23 BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H BFQ31/31A 2-00t BFS17/17R PCOT BCW67f BCW66 bss65 BSV62 PDF

    Medium Power Bipolar Transistors

    Abstract: 2N5320 2N5322
    Text: 2N5320, 2N5322 Series Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A. Up to 1W power dissipation. • Silicon power switching transistors. • Medium power amplifier and switching applications.


    Original     		2N5320, 2N5322 Medium Power Bipolar Transistors 2N5320 PDF

    2N5322 2N5320

    Abstract: 2N5320 2N5322 2N532
    Text: 2N5320 & 2N5322 Medium Power Transistors Features: • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation. • Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications. 2N5320 NPN


    Original     		2N5320 2N5322 2N5320 2N5322 2N5322 2N5320 2N532 PDF

    2SC2340

    Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
    Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


    OCR Scan     		L427414 r-33-0S NE568 NE56800 operate-69 2SC2340 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857 PDF

    philips zener diode

    Abstract: philips cfl Philips Semiconductors philips datasheet surface mount zener diode BYV26x PHILIPS DIODE JTP 68 diode rf semiconductors BYW63 circuit tv Philips 14
    Text: Philips Semiconductors 1 Philips Discretes and MultiMarket ICs Medium Power Rectifiers 1 Philips Semiconductors Medium Power Rectifiers Ratings of Medium Power Rectifiers? • Reverse Voltage 50 - 2000 V. • Available in leaded and SM versions 2 2 • Switching speed 5 ns - 5 µs.


    Original     		OD124 OD106 philips zener diode philips cfl Philips Semiconductors philips datasheet surface mount zener diode BYV26x PHILIPS DIODE JTP 68 diode rf semiconductors BYW63 circuit tv Philips 14 PDF

    TL235

    Abstract: 2N6292
    Text: 2N6292 NPN POWER TRANSISTORS 70 VOLTS 7 AMP, 40 WATTS These general-purpose medium-power transistors are in­ tended for a wide variety of medium-power switching and amplifier applications, such as series and shunt regulators and driver and output stages of high-fidelity amplifiers.


    OCR Scan     		2N6292 T0-220-AB 2N6292 TL235 PDF

    AA3R

    Abstract: 2SB772S V/AA3R
    Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES


    Original     		2SB772S 2SB772S 2SD882S OT-223 2SB772SL 2SB772S-AA3-R 2SB772SL-AA3-R OT-223 QW-R207-012 AA3R V/AA3R PDF

    2N6045G

    Abstract: 2N6040 2N6042 2N6045 2N6040G 2N6041 2N6043 2N6044 transistor marking T2
    Text: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching


    Original     		2N6040, 2N6042, 2N6043, 2N6045 2N6043 2N6045 2N6043 2N6045G 2N6040 2N6042 2N6040G 2N6041 2N6044 transistor marking T2 PDF

    2N6040

    Abstract: 2N6045G 2N6043G 2N6040G 2N6042 2N6045 2N6042G 2N6041 2N6043 2N6044
    Text: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching


    Original     		2N6040, 2N6042, 2N6043, 2N6045 2N6043 2N6045 2N6043 2N6040 2N6045G 2N6043G 2N6040G 2N6042 2N6042G 2N6041 2N6044 PDF

    2SC2340

    Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
    Text: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


    OCR Scan     		L427414 r-33-0S NE568 NE56800 2SC2340 transistor BJ 102 131 NE56800 2SC2339 NE56803 NE56853 NE56857 NE56887 ne56853e PDF

    BD681

    Abstract: No abstract text available
    Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD676A, BD678A, BD680A and BD682 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage


    OCR Scan     		BD675A/677A/679A/681 BD676A, BD678A, BD680A BD682 BD677A BD679A BD681 PDF

    TRANSISTOR zo 109 ma

    Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor
    Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C


    Original     		B15V140 B15V140 OT-223 OT-103 TRANSISTOR zo 109 ma transistor zo 109 transistor 86 IC 7585 midium power uhf transistor microwave transistor ZO 109 transistor PDF

    1.27 GHz transistor

    Abstract: transistor j 127 B15V180
    Text: BIPOLARICS, INC. Part Number B15V180 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V180 is a high performance silicon bipolar transistor intended for medium power linear and Class C


    Original     		B15V180 B15V180 1.27 GHz transistor transistor j 127 PDF

    BD677A

    Abstract: Bd681
    Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD676A, BD678A, BD680A and BD682 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol


    OCR Scan     		BD675A/677A/679A/681 BD676A, BD678A, BD680A BD682 BD675A BD677A BD679A BD681 BD677A PDF

    2SB772L-T

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SB772 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES


    Original     		2SB772 2SB772 2SD882 O-251 2SB772L 2SB772-TM3-R 2SB772L-TM3-R O-251 QW-R213-016 2SB772L-T PDF

    2N6718

    Abstract: IC350 2N6718L
    Text: UNISONIC TECHNOLOGIES CO., LTD. 2N6718 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES 1 *High Power: 850mW *High Current: 1A


    Original     		2N6718 2N6718 850mW O-126C 2N6718L 2N6718-T6C-A-K 2N6718L-T6C-A-K O-126C QW-R217-007 IC350 2N6718L PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP Medium Power Transistor Pin Configuration 1. Emitter 2. Base 3. Collector Features: • PNP Silicon Power Switching Transistors • Medium Power Amplifier and Switching Applications Absolute Maximum Ratings: Ta = 25°C unless otherwise specified


    Original     		BC160-16 BC161-16 element14 PDF

    SB2202

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.


    Original     		SB2202 SB2202 SB2202L-x-TM3-R SB2202G-x-TM3-R SB2202L-x-TN3-T SB2202G-x-TN3-T SB2202L-x-TN3-R SB2202G-x-TN3-R O-251 O-252 PDF

    2SB772L

    Abstract: 2SB772 2SB772 TO-252 POWER AND MEDIUM POWER TRANSISTOR 2SB772 2SB772 equivalent 2SB772 complement 2sd882 TO-252 Power Transistors TO-126 Case 2SB772G 2SB772 TO-126
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


    Original     		2SB772 2SB772 2SD882 11112SD772L 2SD772G 2SB772-x-T60-K 2SB772-x-T6C-K 2SB772-x-TM3-T 2SB772-x-TN3-R 2SB772-x-T9N-B 2SB772L 2SB772 TO-252 POWER AND MEDIUM POWER TRANSISTOR 2SB772 2SB772 equivalent 2SB772 complement 2sd882 TO-252 Power Transistors TO-126 Case 2SB772G 2SB772 TO-126 PDF

    BD678A

    Abstract: BD682 BD675A BD676A BD677A BD679A BD680A BD681
    Text: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD675A, BD677A, BD679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage


    Original     		BD676A/678A/680A/682 O-126 BD675A, BD677A, BD679A BD681 BD676A BD678A BD680A BD682 BD678A BD682 BD675A BD676A BD677A BD680A PDF

    2SB772S

    Abstract: 2SB772SL-AB3-R 2SB772S-AB3-R 2SD882S
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 1 The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES


    Original     		2SB772S 2SB772S 2SD882S OT-89 2SB772SL 2SB772S-AB3-R 2SB772SL-AB3-R QW-R208-002 2SB772SL-AB3-R 2SD882S PDF

    MJE350 b c e

    Abstract: Power Transistors TO-126 Case MJE350
    Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package


    Original     		MJE350 O-126 MJE350 b c e Power Transistors TO-126 Case MJE350 PDF

    2SB772SL

    Abstract: 2SB772S 2SB772SG 2SD882S
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


    Original     		2SB772S 2SB772S 2SD882S 2SB772SL 2SB772SG 2SB772S-x-AA3-R 2SB772S-x-AB3-R 2SB772S-x-T92-B 2SB772S-x-T92-K 2SB772SL-x-AA3-R 2SB772SL 2SB772SG 2SD882S PDF