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    POWER BJT 1000 VOLT VCE Search Results

    POWER BJT 1000 VOLT VCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER BJT 1000 VOLT VCE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    power BJT 1000 volt vce

    Abstract: Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		OT223 150mA FZT560 27-Jun-2011 power BJT 1000 volt vce Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT PDF

    FMMT634TA

    Abstract: FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		OT223 150mA FZT560 GL-106, FMMT634TA FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F PDF

    STGH20N50

    Abstract: power BJT anti saturation diode bjt gate drive circuit power BJT 1000 volt vce Drive Base BJT STGH20N50 datasheet transistor BJT Driver 1000v Transistor bjt Switching Behaviour of IGBT Transistors stgh20
    Text: APPLICATION NOTE INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR by P. Fichera ABSTRACT 1.1 Turn-On Switching This paper looks at the influence of the drive circuit on the switching behaviour of electronic devices belonging to different families. In particular Bipolar Junction


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    STGH20N50

    Abstract: power BJT anti saturation diode TP 220 bjt Drive Base BJT 20A igbt IGBT DRIVER SCHEMATIC 3 PHASE small signal BJT transistor power BJT Switching Behaviour of IGBT Transistors transistor BJT Driver
    Text: APPLICATION NOTE  INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR by P. Fichera ABSTRACT 1.1 Turn-On Switching This paper looks at the influence of the drive circuit on the switching behaviour of electronic devices belonging to different families. In particular Bipolar Junction


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    IGBT SCHEMATIC

    Abstract: motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541
    Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1541/D AN1541 Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. INTRODUCTION As power conversion relies more on switched applications,


    Original     		AN1541/D AN1541 AN1541/D* IGBT SCHEMATIC motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541 PDF

    mosfet d408

    Abstract: schematic diagram welding inverter VUO 36-16N08 7815 CT 7815 regulator resonant half bridge schematic zcs h-bridge zcs 7815 15Vdc regulator 7915 regulator pin configuration igbt gate driver circuit schematic hcpl-3120
    Text: APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS AND ZCS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There are many applications which require pulse power. The needed burst of energy is derived by rapidly discharging a previously charged


    Original     		IXAN0013 25VDC 35VDC 110VAC IXDD408 IXDD414 IXLF19N250A 15VDC D-68623; mosfet d408 schematic diagram welding inverter VUO 36-16N08 7815 CT 7815 regulator resonant half bridge schematic zcs h-bridge zcs 7815 15Vdc regulator 7915 regulator pin configuration igbt gate driver circuit schematic hcpl-3120 PDF

    IXAN0013

    Abstract: 0013 mosfet d408 REGULATOR IC 7815 ic 7815 pin diagram IC 7815 7915 IXEL40N400 transistor 7815 15-0-15 transformer schematic diagram welding inverter
    Text: APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS AND ZCS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There are many applications which require pulse power. The needed burst of energy is derived by rapidly discharging a previously charged


    Original     		IXAN0013 25VDC 35VDC 110VAC IXDD408 IXDD414 IXLF19N250A 15VDC D-68623; IXAN0013 0013 mosfet d408 REGULATOR IC 7815 ic 7815 pin diagram IC 7815 7915 IXEL40N400 transistor 7815 15-0-15 transformer schematic diagram welding inverter PDF

    difference between IGBT and MOSFET IN inverter

    Abstract: IGBT SCHEMATIC use igbt for 3 phase induction motor rectifier pwm igbt DATA SHEET OF IGBT mosfet base induction heat circuit POWER BJTs what is THERMAL RUNAWAY IN RECTIFIER MOSFET power transistor bjt 1000 a n mosfet depletion 1A sink
    Text: AN1541/D Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. http://onsemi.com APPLICATION NOTE INTRODUCTION As power conversion relies more on switched applications, semiconductor manufacturers need to create


    Original     		AN1541/D r14525 difference between IGBT and MOSFET IN inverter IGBT SCHEMATIC use igbt for 3 phase induction motor rectifier pwm igbt DATA SHEET OF IGBT mosfet base induction heat circuit POWER BJTs what is THERMAL RUNAWAY IN RECTIFIER MOSFET power transistor bjt 1000 a n mosfet depletion 1A sink PDF

    transistor c 5936 circuit diagram

    Abstract: AT-32063 c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Hewlett-Packard AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors mounted in a


    Original     		AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E transistor c 5936 circuit diagram c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB PDF

    transistor BD 139

    Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a


    Original     		AT-32063 AT32063 AT-320XX OT-363 SC-70) AT-32063, transistor BD 139 AP 1100 R1 darlington cascode second stage transistor AT-320 agilent PDF

    darlington cascode second stage

    Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors


    Original     		AT-32063 AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E darlington cascode second stage transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR d2030 PDF

    mosfet base induction heat circuit

    Abstract: mitsubishi sic MOSFET power IGBT MOSFET GTO SCR diode skiip 33 ups 063 IGCT mitsubishi igbt induction heating generator Cree SiC MOSFET SiC BJT zvs zcs induction heating igbt Heatsink For stud devices - Semikron
    Text: High Heat Flux Applications in Power Electronics Scott G. Leslie Chief Technologist Powerex Inc Youngwood PA High Heat Flux Applications in Power Electronics 2005 1 Power Switching Capacity VA Power Semiconductor Device Power Switching Capacity & Application Map


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    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


    Original     		2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp PDF

    zener 5v6 0,5W

    Abstract: low voltage wireless mic ic PWM IC 8 PIN DIP 3842 varistor sck 037 I2S/PCM circuit diagram electronic choke for tube light SOD-923 zener NST3904F3T5G v sot-563 MOSFET 723 ic internal diagram
    Text: Low Profile, Small Footprint Packaging ON Semiconductor offers the latest in low-profile, small-outline packaging. We enable the design and production of ultra-thin end-user products for the consumer market, by manufacturing some of the lowest profile packaging


    Original     		OT-953 BRD8026-4 BRD8026/D zener 5v6 0,5W low voltage wireless mic ic PWM IC 8 PIN DIP 3842 varistor sck 037 I2S/PCM circuit diagram electronic choke for tube light SOD-923 zener NST3904F3T5G v sot-563 MOSFET 723 ic internal diagram PDF

    ECG transistor replacement guide book free

    Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor
    Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete


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    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor PDF

    NCP1522

    Abstract: NCP1521 NUF2030 transistor 669A SOT-23-5 PWM NUF2030XV6 ncp1400asn50 NCP5005 NCP1500 NCP1501
    Text: Low Profile, Small Footprint Packaging ON Semiconductor offers the latest in low-profile, small-outline packaging. We enable the design and production of ultra-thin end-user products for the consumer market, by manufacturing some of the lowest profile packaging


    Original     		OT-553, BRD8026-2 BRD8026/D NCP1522 NCP1521 NUF2030 transistor 669A SOT-23-5 PWM NUF2030XV6 ncp1400asn50 NCP5005 NCP1500 NCP1501 PDF

    UC3842 smps design with TL431

    Abstract: MC34063 Boost MOSFET mc34063 step down with mosfet computer schematic power supply circuit diagram circuit diagram of mosfet based smps power supply smps with uc3842 and tl431 mc34063 step up with mosfet g6351 atx power supply UC3842 diagram schematic diagram dc-dc flyback converter
    Text: SWITCHMODEt Power Supplies Reference Manual and Design Guide SMPSRM/D Rev. 3A, July−2002 SCILLC, 2006 Previous Edition © 2002 “All Rights Reserved’’ SMPSRM ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice


    Original     		July-2002 UC3842 smps design with TL431 MC34063 Boost MOSFET mc34063 step down with mosfet computer schematic power supply circuit diagram circuit diagram of mosfet based smps power supply smps with uc3842 and tl431 mc34063 step up with mosfet g6351 atx power supply UC3842 diagram schematic diagram dc-dc flyback converter PDF

    UC3842 smps design with TL431

    Abstract: UC3842 variable voltage smps design with TL431 atx power supply UC3842 diagram design smps 500 watt TL494 tl494 smps battery charger development board 500 WATT 30 amps 13.8 volt smps Design SMPS with TL594 tl494 interleaved flyback 1n4000 sERIES DIODES uc3842 battery charger schematic
    Text: SMPSRM/D Rev. 3, Jul-2002 SWITCHMODE Power Supply Reference Manual ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original     		Jul-2002 r14525 UC3842 smps design with TL431 UC3842 variable voltage smps design with TL431 atx power supply UC3842 diagram design smps 500 watt TL494 tl494 smps battery charger development board 500 WATT 30 amps 13.8 volt smps Design SMPS with TL594 tl494 interleaved flyback 1n4000 sERIES DIODES uc3842 battery charger schematic PDF

    d 42030 transistor

    Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
    Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A


    Original     		BUT11/11A O-220 BUT11 BUT11A BUT11 AN-758: AN-758 d 42030 transistor AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817 PDF

    cadmium sulfide photoresistor

    Abstract: heat sensor with fan cooling using LM741 circuit diagram of incubator ACD0831 DC FAN CONTROLLED TEMPERATURE USING IC LM741 circuit diagram of pipe climbing robot hair dryer PID diagram incubator project book basic stamp program with adc0831 qrb1114
    Text: Process Control Student Guide VERSION 1.0 WARRANTY Parallax Inc. warrants its products against defects in materials and workmanship for a period of 90 days from receipt of product. If you discover a defect, Parallax Inc. will, at its option, repair or replace the merchandise, or refund the


    Original     		ULN2003A cadmium sulfide photoresistor heat sensor with fan cooling using LM741 circuit diagram of incubator ACD0831 DC FAN CONTROLLED TEMPERATURE USING IC LM741 circuit diagram of pipe climbing robot hair dryer PID diagram incubator project book basic stamp program with adc0831 qrb1114 PDF

    pt 4115 led driver

    Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


    Original     		BUT12/12A O-220 BUT12 BUT12A KM4211-PB: KM4211 FAN5231-PB: pt 4115 led driver AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425 PDF

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30 PDF

    TRANSZORB diode

    Abstract: 450w smps 5KE350 200 ampere and 400 volt MOSFET smps 450W
    Text: THE USE OF TRANSZORB DIODES WITH POWER MOSFETS by Jon D. Paul and Bill Roehr ABSTRACT P o w e r M O S F E T s have a m o re ra p id c o s t vs. b re a k ­ The T ra n s Z o rb d io d e serves a d u a l a p p lic a tio n ; a d o w n vo lta g e tra d e o ff th a n d o b ip o la r devices. T ra n ­


    OCR Scan     		PDF