Untitled
Abstract: No abstract text available
Text: IS31LT3117 60V, 350MA, 4-CHANNEL CONSTANT CURRENT REGULATOR WITH OTP Preliminary Information January 2014 GENERAL DESCRIPTION FEATURES The IS31LT3117 is a 4-channel, linear regulated, constant current LED driver which can provide 4 equal currents outputs of up to 350mA per channel to drive
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IS31LT3117
350MA,
IS31LT3117
350mA
eTSSOP-16
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led tail light pwm dimming
Abstract: No abstract text available
Text: IS32LT3117 60V, 350MA, 4-CHANNEL CONSTANT CURRENT REGULATOR WITH OTP FOR AUTOMOTIVE LIGHT Preliminary Information January 2014 GENERAL DESCRIPTION FEATURES The IS32LT3117 is designed for the automotive light. This device is a 4-channel, linear regulated, constant
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IS32LT3117
350MA,
IS32LT3117
350mA
IS32Lture
eTSSOP-16
led tail light pwm dimming
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SIT Static Induction Transistor
Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are
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AN1529/D
AN1529
AN1529/D*
SIT Static Induction Transistor
create uhf vhf tv matching transformer
AR165S
Granberg
AR-165S
power bjt advantages and disadvantages
all mosfet vhf power amplifier narrow band
rf POWER BJTs
mrf154 amplifier
bjt ce amplifier
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2n7002ltig
Abstract: TLV431ASN1T1G LRC-LR1206-01-R400-F 2N7002LTI MBRD360 5C BJT NST30010MXV6T1G power BJT PNP BAV99LT1 MBRA340
Text: AND8305/D 350 mA Buck Boost LED Driver using Bipolar Junction Transistors BJTs , High Side Current Sensing and a NCP3063 Controller http://onsemi.com Prepared by: DENNIS SOLLEY ON Semiconductor INTRODUCTION (typically absorbed by avalanching alternator rectifiers or
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AND8305/D
NCP3063
2n7002ltig
TLV431ASN1T1G
LRC-LR1206-01-R400-F
2N7002LTI
MBRD360
5C BJT
NST30010MXV6T1G
power BJT PNP
BAV99LT1
MBRA340
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2n7002ltig
Abstract: BJT with V-I characteristics AND8305 power BJT Alternator regulator Q5 LED MBRD360 NCP3063DR2G TLV431ASN1T1G BAV99LT1
Text: AND8305/D 350 mA Buck Boost LED Driver using Bipolar Junction Transistors BJTs , High Side Current Sensing and a NCP3063 Controller http://onsemi.com Prepared by: DENNIS SOLLEY ON Semiconductor INTRODUCTION (typically absorbed by avalanching alternator rectifiers or
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AND8305/D
NCP3063
2n7002ltig
BJT with V-I characteristics
AND8305
power BJT
Alternator regulator
Q5 LED
MBRD360
NCP3063DR2G
TLV431ASN1T1G
BAV99LT1
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layout 48 VOLT 150 AMP smps
Abstract: NCP-1200 equivalent 12v 5 A battery charger smps schematic DC-DC CONVERTER china portable DVD circuit diagram SMPS 12V llc CS5322 CPU POWER SUPPLY CHIP 3589 Laser Diode 4 pin dvd burner MC33501 MC33503
Text: Q U A R T E R L Y T E C H N O L O G Y A N D A P P L I C AT I O N S M A G A Z I N E ON-Display FIRST QUARTER 2001 Vol. 2, No. 1 This Quarter. FEATURES A Look at Where We Are Power Supply Design Software 3 29 POWER MANAGEMENT World’s First Single-Cell Battery Powered
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ONDISPLAY1Q01/D
layout 48 VOLT 150 AMP smps
NCP-1200 equivalent
12v 5 A battery charger smps schematic
DC-DC CONVERTER china portable DVD circuit diagram
SMPS 12V llc
CS5322 CPU POWER SUPPLY CHIP
3589
Laser Diode 4 pin dvd burner
MC33501
MC33503
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BLY93a
Abstract: No abstract text available
Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR
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BLY93A
30Vdc.
175MHzl
BLY93a
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Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design
Abstract: No abstract text available
Text: Guest Column | February 10, 2014 Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design By Alan Ake, Skyworks Solutions, Inc. I consider myself fortunate that, as a fresh-out-of-school EE, I was able to start my electrical engineering career designing radio frequency RF front ends for what are now antiquated one-way
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1990s,
Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design
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MMSZ4686T1G0SCT-ND
Abstract: MMBT2907ALT1G TLV431ASN1T1G MBRD360 LRC-LR1206-01-R200-F AND8305 MBRD340 NCP3063 NTMS4705N NTMS5P02
Text: AND8306/D 700 mA/1 A Buck Boost LED Driver using FETs, High Side Current Sensing and a NCP3063 Controller http://onsemi.com Prepared by: DENNIS SOLLEY ON Semiconductor INTRODUCTION particular application may require a driver to supply 700ĂmA to a series string of 3 to 6 LEDs. From Table 1, the
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AND8306/D
NCP3063
700mA
MMSZ4686T1G0SCT-ND
MMBT2907ALT1G
TLV431ASN1T1G
MBRD360
LRC-LR1206-01-R200-F
AND8305
MBRD340
NTMS4705N
NTMS5P02
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2N2222A bjt
Abstract: 74 standard TTL bjt 2n2222a ttl logic gates IRHLUB7970Z4 TTL logic gate Drive Base BJT IRHLUB770Z4 mosfet p channel irf LM139 APPLICATION
Text: Application Note AN-1067 Design Considerations When Using RadiationHardened Small Signal Logic Level MOSFETs Table of Contents Page Introduction . 1 Acronyms. 1
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AN-1067
AN-937.
AN-944.
AN-936.
2N2222A bjt
74 standard TTL
bjt 2n2222a
ttl logic gates
IRHLUB7970Z4
TTL logic gate
Drive Base BJT
IRHLUB770Z4
mosfet p channel irf
LM139 APPLICATION
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siliconix vmp4
Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc
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99CH36282C.
KE67VWU,
siliconix vmp4
irf540 27.12 MHz
Siemens MTT 95 A 12 N
class e power amplifier
IRF510 SEC
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
IRF540 mosfet with maximum VDS 30 V
VMP4
Class E amplifier
IRF510 SEC mosfet
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SVtr2805S
Abstract: 5962P1122001HYC 5962P1122001KXC SVTR2800S
Text: SVTR2800S Series HIGH RELIABILITY HYBRID RADIATION TOLERANT DC-DC CONVERTERS DESCRIPTION FEATURES The SVTR series of high reliability DC-DC converters is operable over the full military temperature range -55 °C to +125 °C with no power derating. Paramount to the SVTR
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SVTR2800S
MIL-PRF-38534.
SVTR2800S-2
SVtr2805S
5962P1122001HYC
5962P1122001KXC
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SVHF2805S/H
Abstract: SVhf2815S SVHF2800S SVHF2812S
Text: SVHF2800S Series HIGH RELIABILITY HYBRID RADIATION TOLERANT DC-DC CONVERTERS DESCRIPTION FEATURES The SVHF series of high reliability DC-DC converters is operable over the full military temperature range -55 °C to +125 °C with no power derating. Paramount to the SVHF
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SVHF2800S
MIL-PRF-38534.
SVHF2800S-2
SVHF2805S/H
SVhf2815S
SVHF2812S
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SVHF2805S/H
Abstract: No abstract text available
Text: SVHF2800S Series HIGH RELIABILITY HYBRID RADIATION TOLERANT DC-DC CONVERTERS DESCRIPTION FEATURES The SVHF series of high reliability DC-DC converters is operable over the full military temperature range -55 °C to +125 °C with no power derating. Paramount to the SVHF
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SVHF2800S
MIL-PRF-38534.
SVHF2800S-3
SVHF2805S/H
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5962P1121603HXC
Abstract: No abstract text available
Text: SVSA2800D Series HIGH RELIABILITY HYBRID RADIATION TOLERANT DC-DC CONVERTERS DESCRIPTION FEATURES The SVSA series of high reliability DC-DC converters is operable over the full military temperature range -55 °C to +125 °C with no power derating. Paramount to the SVSA
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SVSA2800D
MIL-PRF-38534.
SVSA2800D-2
5962P1121603HXC
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svsa2805
Abstract: SVSA2805S SVSA2800S SVSA2815S 5962P1121904KXC 5962P1121902KXC SVSA2800S-2 5962P1121904HXC 5962P1121902HXC SVSA2812S
Text: SVSA2800S Series HIGH RELIABILITY HYBRID RADIATION TOLERANT DC-DC CONVERTERS DESCRIPTION FEATURES The SVSA series of high reliability DC-DC converters is operable over the full military temperature range -55 °C to +125 °C with no power derating. Paramount to the SVSA
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SVSA2800S
MIL-PRF-38534.
SVSA2800S-2
svsa2805
SVSA2805S
SVSA2815S
5962P1121904KXC
5962P1121902KXC
5962P1121904HXC
5962P1121902HXC
SVSA2812S
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SVTR2800D
Abstract: No abstract text available
Text: SVTR2800D Series HIGH RELIABILITY HYBRID RADIATION TOLERANT DC-DC CONVERTERS DESCRIPTION FEATURES The SVTR series of high reliability DC-DC converters is operable over the full military temperature range -55 °C to +125 °C with no power derating. Paramount to the SVTR
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SVTR2800D
MIL-PRF-38534.
SVTR2800D-2
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5962P1121603KXA
Abstract: TM2009 5962P1121603HXC SVSA2812D SVSA2805D/K
Text: SVSA2800D Series HIGH RELIABILITY HYBRID RADIATION TOLERANT DC-DC CONVERTERS DESCRIPTION FEATURES The SVSA series of high reliability DC-DC converters is operable over the full military temperature range -55 °C to +125 °C with no power derating. Paramount to the SVSA
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SVSA2800D
MIL-PRF-38534.
SVSA2800D-3
5962P1121603KXA
TM2009
5962P1121603HXC
SVSA2812D
SVSA2805D/K
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5962P
Abstract: No abstract text available
Text: SVFL2800S Series HIGH RELIABILITY HYBRID RADIATION TOLERANT DC-DC CONVERTERS DESCRIPTION FEATURES The SVFL series of high reliability DC-DC converters is operable over the full military temperature range -55 °C to +125 °C with no power derating. Paramount to the SVFL
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SVFL2800S
MIL-PRF-38534.
SVFL2800S-2
5962P
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SVHF2800D
Abstract: SVHF2800D-2
Text: SVHF2800D Series HIGH RELIABILITY HYBRID RADIATION TOLERANT DC-DC CONVERTERS DESCRIPTION FEATURES The SVHF series of high reliability DC-DC converters is operable over the full military temperature range -55 °C to +125 °C with no power derating. Paramount to the SVHF
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SVHF2800D
MIL-PRF-38534.
SVHF2800D-2
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5962P1121403KXC
Abstract: smd capacitor 106 35k
Text: SVFL2800D Series HIGH RELIABILITY HYBRID RADIATION TOLERANT DC-DC CONVERTERS DESCRIPTION FEATURES The SVFL series of high reliability DC-DC converters is operable over the full military temperature range -55 °C to +125 °C with no power derating. Paramount to the SVFL
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SVFL2800D
MIL-PRF-38534.
SVFL2800D-2
5962P1121403KXC
smd capacitor 106 35k
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hot electron devices
Abstract: SGS-Thomson ball grid array VLSI Vision
Text: CHAPTER 6 TOWARDS THE FUTURE “Tomorrow will differ from yesterday. It will be new and depend on us. It is to be invented more than discovered” 6.1 VISION Vision 2000 By the year 2000, be among the top world suppliers and be recognized as the “best-inclass” in service and environmental protection,
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f 32057
Abstract: T Y 41357
Text: TI/A-COn SEflICONDiBRLNGTON MAE D 51=45214 0DD117S 0 • MIC GMIC Switches M A T S I-ll MA4MG201 and MA4MG202 PIN Diode SPOT Switch Chips with Integrated Bias Network Features Usable Frequency Range: 2-21 GHz MA4MG201 4-21 GHz (MA4MG202) Bias Circuit and PIN Diode
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0DD117S
MA4MG201
MA4MG202
MA4MG201)
MA4MG202)
f 32057
T Y 41357
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Untitled
Abstract: No abstract text available
Text: DATEX INC E D 07E D M n E • ShSlStl 00Q0717 2 ■ " A D C -8 6 8 Ultra High Speed, 12-Bit Modular A/D Converter L T - S h / O - IZ FEATURES « 12-Bit resolution • 500 Nanoseconds maximum conversion time • 3-State output • ±'/a LSB linearity • On board offset & gain adjustments
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00Q0717
12-Bit
12-Bit
ADC-868
12-bit,
SHM-4860,
ADC-868
34-Pin
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