Untitled
Abstract: No abstract text available
Text: TP805C04 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics
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TP805C04
500ns,
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SCHOTTKY 20A 40V
Abstract: TP805C04 power diode 20a 40v TP805
Text: TP805C04 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 種 機 1 Maximum ratings and characteristics
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Original
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TP805C04
500ns,
SCHOTTKY 20A 40V
TP805C04
power diode 20a 40v
TP805
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PDF
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Untitled
Abstract: No abstract text available
Text: TP805C04 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics
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Original
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TP805C04
500ns,
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PDF
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SCHOTTKY 20A 40V
Abstract: TP805
Text: TP805C04 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics
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Original
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TP805C04
500ns,
SCHOTTKY 20A 40V
TP805
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PDF
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Untitled
Abstract: No abstract text available
Text: TP805C04 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design 種07. 機 定 h 20 Applications High speed power switching Maximum ratings and characteristics
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Original
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TP805C04
500ns,
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PDF
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SUM60N04-05LT
Abstract: No abstract text available
Text: SUM60N04-05LT New Product Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 60a 0.0065 @ VGS = 4.5 V 20a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode
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SUM60N04-05LT
S-05061--Rev.
12-Nov-01
SUM60N04-05LT
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PDF
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SUM60N04-05LT
Abstract: No abstract text available
Text: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 60a 0.0065 @ VGS = 4.5 V 20a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature
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Original
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SUM60N04-05LT
S-40862--Rev.
03-May-04
SUM60N04-05LT
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PDF
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SUM60N04-05LT
Abstract: No abstract text available
Text: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 60a 0.0065 @ VGS = 4.5 V 20a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature
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Original
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SUM60N04-05LT
08-Apr-05
SUM60N04-05LT
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PDF
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D2GD
Abstract: No abstract text available
Text: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature
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SUM60N04-05LT
SUM60N04-05LT
SUM60N04-05LT-E3
11-Mar-11
D2GD
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PDF
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SUM60N04-05LT
Abstract: No abstract text available
Text: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature
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Original
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SUM60N04-05LT
SUM60N04-05LT
SUM60N04-05LT-E3
08-Apr-05
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PDF
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SUM60N04-05LT
Abstract: No abstract text available
Text: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature
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Original
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SUM60N04-05LT
SUM60N04-05LT-E3
18-Jul-08
SUM60N04-05LT
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature
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Original
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SUM60N04-05LT
SUM60N04-05LT
SUM60N04-05LT-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRL7YS1404CM
Abstract: No abstract text available
Text: PD - 94676 HEXFET POWER MOSFET THRU-HOLE Low-ohmic TO-257AA IRL7YS1404CM 40V, N-CHANNEL Product Summary Part Number IRL7YS1404CM RDS(on) 0.007Ω BVDSS 40V ID 20A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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O-257AA)
IRL7YS1404CM
hig92
5M-1994.
O-257AA.
IRL7YS1404CM
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PDF
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Untitled
Abstract: No abstract text available
Text: AON6440 40V N-Channel MOSFET SDMOS TM General Description Product Summary The AON6440 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well
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AON6440
AON6440
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Untitled
Abstract: No abstract text available
Text: PD - 94676 HEXFET POWER MOSFET THRU-HOLE Low-ohmic TO-257AA IRL7YS1404CM 40V, N-CHANNEL Product Summary Part Number IRL7YS1404CM RDS(on) 0.007Ω BVDSS 40V ID 20A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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Original
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O-257AA)
IRL7YS1404CM
5M-1994.
O-257AA.
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PDF
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AOT440
Abstract: No abstract text available
Text: AOT440 40V N-Channel MOSFET TM SDMOS General Description Product Summary TM The AOT440 is fabricated with SDMOS trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is
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AOT440
AOT440
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PDF
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Untitled
Abstract: No abstract text available
Text: AON6440 40V N-Channel MOSFET SDMOS TM General Description Product Summary The AON6440 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well
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AON6440
AON6440
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PDF
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AON6440L
Abstract: No abstract text available
Text: AON6440L 40V N-Channel MOSFET TM SDMOS General Description Product Summary The AON6440L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited
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AON6440L
AON6440L
TCON6440L
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AOB442
Abstract: No abstract text available
Text: AOB442 40V N-Channel MOSFET TM SDMOS General Description Product Summary VDS TM The AOB442 is fabricated with SDMOS trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal
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AOB442
AOB442
O-263
DraB442
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Untitled
Abstract: No abstract text available
Text: AOT440 40V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT440 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is
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AOT440
AOT440
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PDF
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Untitled
Abstract: No abstract text available
Text: AOT440 40V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT440 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is
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AOT440
AOT440
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PDF
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AON6240
Abstract: 40ida
Text: AON6240 40V N-Channel MOSFET General Description Product Summary VDS The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of
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AON6240
AON6240
40ida
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PDF
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Untitled
Abstract: No abstract text available
Text: AON6236 40V N-Channel MOSFET General Description Product Summary VDS The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of
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AON6236
AON6236
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PDF
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Untitled
Abstract: No abstract text available
Text: AON6234 40V N-Channel MOSFET General Description Product Summary VDS The AON6234 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of
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AON6234
AON6234
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