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Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
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APT06DC60HJ
Abstract: No abstract text available
Text: APT06DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 6A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery
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APT06DC60HJ
Abstract: No abstract text available
Text: APT06DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 6A @ Tc = 100°C Application • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~ SiC Schottky Diode
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APT06DC60HJ
OT-227)
APT06DC60HJ
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Text: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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Text: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power
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STPSC606D
Abstract: STPSC606 STPSC606G-TR STPSC606G
Text: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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Text: US 3A . US 3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Ultrafast silicon rectifier diodes US 3A.US 3M
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Text: S3A . S3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Standard silicon rectifier diodes S3A.S3M 4
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Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet − production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ K K Description The SiC diode is an ultrahigh performance power
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STPSC6H065D
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Text: SB 320.SB 3100 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Schottky barrier rectifiers diodes SB 320.SB 3100 8 9 1
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Text: 405nm Butterfly Packaged Diode Laser K41S14F-0.10W Key Features： 405nm wavelength 100mW output power 60µm fiber core diameter 0.22NA Applications： Printing Biochemical Analysis Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by
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405nm
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Text: 405nm Butterfly Packaged Diode Laser K41S14F-0.10W Key Features： 405nm wavelength 100mW output power 60µm fiber core diameter 0.22NA Applications： Printing Biochemical Analysis Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by
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405nm
K41S14F-0
100mW
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405nm diode
Abstract: 405nm Laser 405nm
Text: 405nm Coaxial Packaged SM Diode Laser K41S03F-0.03W-S Key Features： 30mW output power 3µm fiber core diameter 0.12NA 405nm wavelength Applications： Printing Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by
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405nm
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03w-s
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405nm Laser 5 mw
Abstract: 405nm 650NM laser diode 20mw 405nm 20mW laser diode 405nm 405nm Laser 15 mw
Text: 405nm Coaxial Packaged SM Diode Laser K41S03F-0.02W-S Key Features： 20mW output power 3µm fiber core diameter 0.12NA 405nm wavelength Applications： Printing Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by
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405nm
K41S03F-0
405nm Laser 5 mw
650NM laser diode 20mw
405nm 20mW
laser diode 405nm
405nm Laser 15 mw
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Text: 405nm Coaxial Packaged MM Diode Laser K41S03F-0.10W Key Features： 100mW output power 60µm fiber core diameter 0.22NA 405nm wavelength Applications： Printing Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by
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Text: 405nm Coaxial Packaged SM Diode Laser K41S03F-0.02W-S Key Features： 20mW output power 3µm fiber core diameter 0.12NA 405nm wavelength Applications： Printing Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by
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405nm
K41S03F-0
bwt/405nm/
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HAT2126RP
Abstract: No abstract text available
Text: HAT2126RP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching ADE-208-1576D Z 5th. Edition Dec. 2002 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode
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HAT2126RP
ADE-208-1576D
HSOP-11
D-85622
D-85619
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Text: 405nm HHL Packaged SM Diode Laser K41S06F-0.10W Key Features： 405nm wavelength 100mW output power 60µm fiber core diameter 0.22NA Applications： Printing Biochemical Analysis Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by
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Untitled
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Text: 405nm Coaxial Packaged SM Diode Laser K41S03F-0.03W-S Key Features： 30mW output power 3µm fiber core diameter 0.12NA 405nm wavelength Applications： Printing Aiming beam BWT Beijin g’s High Power Diode Laser Modules are manufactured b y
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Untitled
Abstract: No abstract text available
Text: 405nm HHL Packaged SM Diode Laser K41S06F-0.10W Key Features： 405nm wavelength 100mW output power 60µm fiber core diameter 0.22NA Applications： Printing Biochemical Analysis Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by
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405nm
K41S06F-0
100mW
bwt/405nm/
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Abstract: No abstract text available
Text: UF 5400.UF 5408 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Ultrafast silicon rectifier diodes 8 9 1 9 9 -) 1
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Text: 830nm Fiber-Coupled Diode Laser K83S02F-1.00W Key Features： 1W output power 62.5µm fiber core diameter 0.22NA 830nm wavelength Applications： Printing BWT Beijin g’s High Power Diode Laser Modules are manufactured b y adopting sp ecialized fiber-coupling techniques, resulting in volume
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