13003D
Abstract: No abstract text available
Text: DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 450V • • • BVCES > 700V BVEBO > 9V • • IC = 1.5A high Continuous Collector Current • • Integrated Collector-Emitter Diode to act as free-wheeling diode
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DXT13003DG
OT223
J-STD-020
MIL-STD-202,
DS37262
13003D
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Untitled
Abstract: No abstract text available
Text: BAT66. Silicon Schottky Diode • Power rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 " , , ! ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT66.
BAT66-05
OT223
50/60Hz,
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BAT70
Abstract: BAT70-05
Text: BAT70. Silicon Schottky Diode Power rectifier diode Parallel connection for maximum I F per package Low forward voltage drop For power supply For clamping and protection BAT70-05 4 D 1 1 2 D 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT70.
BAT70-05
OT223
50/60Hz,
Nov-07-2002
100ms
BAT70
BAT70-05
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bat66
Abstract: No abstract text available
Text: BAT66. Silicon Schottky Diode • Power rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 " , , ! ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT66.
BAT66-05
OT223
50/60Hz,
bat66
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fdfs6n303
Abstract: 6n303 Schottky Diode 50V 3A SOIC-16 a12s
Text: October 2001 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.
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FDFS6N303
fdfs6n303
6n303
Schottky Diode 50V 3A
SOIC-16
a12s
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PDF
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fdfs6n303
Abstract: 6n303 L86Z SOIC-16 F011 F63TNR F852
Text: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.
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FDFS6N303
fdfs6n303
6n303
L86Z
SOIC-16
F011
F63TNR
F852
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PDF
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fdfs6n303
Abstract: F011 F63TNR F852 L86Z SOIC-16
Text: January 2000 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.
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FDFS6N303
050lopment.
fdfs6n303
F011
F63TNR
F852
L86Z
SOIC-16
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PDF
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6n303
Abstract: fdfs6n303 fdfs SOIC-16
Text: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.
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FDFS6N303
6n303
fdfs6n303
fdfs
SOIC-16
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PDF
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fdfs6n303
Abstract: SOIC-16 mosfet with schottky body diode
Text: October 2003 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description Features The FDFS6N303 incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and
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FDFS6N303
FDFS6N303
SOIC-16
mosfet with schottky body diode
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BAT66
Abstract: BAT66-05
Text: BAT66. Silicon Schottky Diode Power rectifier diode For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 4 D 1 1 D 2 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT66.
BAT66-05
OT223
50/60Hz,
Feb-14-2003
EHB00063
EHB00062
BAT66
BAT66-05
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES
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5302D
5302D
5302DL-AA3-R
5302DG-AA3-R
5302DL-T60-K
5302DG-T60-K
5302DL-T92-B
5302DG-T92-B
5302DL-T92-K
5302DG-T92-K
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diode l 0607
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA142KT1
70/SOT
M1MA142KT1
MSC1621T1
diode l 0607
BC237
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES
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5302D
5302D
OT-223
5302DG-AA3-R
5302DL-T60-K
5302DG-T60-K
O-126
5302DL-T92-B
5302DG-T92-B
5302DL-T92-K
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Q62702-A988
Abstract: A988 DIODE BAT Code 035 on semiconductor JS marking diode
Text: Silicon Schottky Diode BAT 66-05 Preliminary Data Low-power Schottky rectifier diode ● For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes ● Type Marking Ordering Code tape and reel BAT 66-05 BAT 66-05 Q62702-A988
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Q62702-A988
OT-223
Q62702-A988
A988
DIODE BAT
Code 035 on semiconductor
JS marking diode
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VPS05163
Abstract: Schottky Diode SOT-223 6605
Text: BAT 66-05 Silicon Schottky Diode • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, 4 meter protection, bias isolation and clamping purpose 3 2 1 VPS05163 2, 4 1 3 EHA00005 Type Marking BAT 66-05 BAT 66-05 Pin Configuration
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VPS05163
EHA00005
OT-223
50/60Hz,
EHB00062
EHB00063
Oct-07-1999
EHB00155
VPS05163
Schottky Diode SOT-223
6605
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode DAP222 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board
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416/SC
DAP222
A218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
BC237
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 66-05 Preliminary Data • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes Type Marking Ordering Code tape and reel BAT 66-05 BAT 66-05
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OCR Scan
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Q62702-A988
OT-223
23SL0S
01SD370
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PDF
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S10ms
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 66-05 Preliminary Data • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes Type Marking Ordering Code tape and reel BAT 66-05 BAT 66-05
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OCR Scan
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Q62702-A988
OT-223
100mA
S10ms
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PDF
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motorola 5118
Abstract: SOT-223 KD
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M V7005T1 Silicon Epicap Diode Motorola Preferred Device This silicon epicap diode is designed for use in high capacitance, high-tuning ratio applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
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OCR Scan
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OT-223
MV7005T1
inch/1000
MV7005T3
inch/4000
V7005T1
7005T1
motorola 5118
SOT-223 KD
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PDF
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1N5825
Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
Text: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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OCR Scan
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1N5823
1N5824
1N5825
1N5825
diode 1N5825
N5824
1n6823
marking Bq sot23
1N5824 ON
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PDF
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3148b
Abstract: No abstract text available
Text: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a Motorola Preferred Device Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art
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OCR Scan
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MBR3520
MBR3535
MBR3545
MBR3545
3148b
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PDF
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1N5628
Abstract: 12115X marking AB SOD123 1N5828
Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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OCR Scan
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1N5826
1N5827
1N5828
1N582S
1N5828
DO-35
1N5628
12115X
marking AB SOD123
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PDF
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DIODE SD51
Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
Text: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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OCR Scan
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150-C
1N6097
1N6098
DIODE SD51
5817 SOD-123
bly 83
Motorola Switchmode
SD51
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PDF
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12v dc full wave bridge rectifier
Abstract: 5000 watt full bridge design 1N5S34
Text: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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OCR Scan
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1N5832
1N5834
1N5S34
12v dc full wave bridge rectifier
5000 watt full bridge design
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PDF
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