sot-23 74w datasheet
Abstract: APP1832 IRF6603 IRF6604 MAX1544 MAX1718 MAX1897
Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS PROTOTYPING AND PC BOARD LAYOUT Keywords: power dissipation, resistive loss, switching loss, power MOSFETs Dec 26, 2002 APPLICATION NOTE 1832 Power Supply Engineer's Guide to Calculate Dissipation for MOSFETs in High-Power Supplies
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com/an1832
MAX1718:
MAX1897:
AN1832,
APP1832,
Appnote1832,
sot-23 74w datasheet
APP1832
IRF6603
IRF6604
MAX1544
MAX1718
MAX1897
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TMS320C40
Abstract: Architecture of TMS320C4X FLOATING POINT PROCESSOR
Text: Calculation of TMS320C40 Power Dissipation Application Report 1993 Digital Signal Processing Products Printed in U.S.A., November 1993 SPRA032 Calculation of TMS320C40 Power Dissipation Application Report Jenny Hong Digital Signal Processing Products - Semiconductor Group
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TMS320C40
SPRA032
TMS320C40
Architecture of TMS320C4X FLOATING POINT PROCESSOR
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TMS320C40
Abstract: No abstract text available
Text: Calculation of TMS320C40 Power Dissipation Application Report 1993 Digital Signal Processing Products Printed in U.S.A., November 1993 SPRA032 Calculation of TMS320C40 Power Dissipation Application Report Jenny Hong Digital Signal Processing Products - Semiconductor Group
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TMS320C40
SPRA032
TMS320C40
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XAL4040-103
Abstract: star delta ladder diagram AD5755-1 xal4040 transorb diode BIDIRECTIONAL transorb application note AD5737 ADP2302 ADP2303 ADR02
Text: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA and Voltage Output DAC with Dynamic Power Control AD5735 On-chip dynamic power control minimizes package power dissipation in current mode. This reduced power dissipation is achieved by regulating the voltage on the output driver from
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12-Bit,
AD5735
12-bit
MO-220-VMMD-4
080108-C
64-Lead
CP-64-3)
AD5735ACPZ
AD5735ACPZ-REEL7
D09961-0-7/11
XAL4040-103
star delta ladder diagram
AD5755-1
xal4040
transorb diode BIDIRECTIONAL
transorb application note
AD5737
ADP2302
ADP2303
ADR02
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transorb diode BIDIRECTIONAL
Abstract: GRM32ER71H475KA88L star delta ladder diagram star delta timer dac 51
Text: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA and Voltage Output DAC with Dynamic Power Control AD5735 Data Sheet On-chip dynamic power control minimizes package power dissipation in current mode. This reduced power dissipation is achieved by regulating the voltage on the output driver from
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12-Bit,
12-bit
AD5735
MO-220-VMMD-4
64-Lead
CP-64-3)
AD5735ACPZ
AD5735ACPZ-REEL7
transorb diode BIDIRECTIONAL
GRM32ER71H475KA88L
star delta ladder diagram
star delta timer dac 51
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XAL4040-103
Abstract: star delta ladder diagram adum1411
Text: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA and Voltage Output DAC with Dynamic Power Control AD5735 Data Sheet FEATURES On-chip dynamic power control minimizes package power dissipation in current mode. This reduced power dissipation is achieved by regulating the voltage on the output driver from
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12-Bit,
12-bit
AD5735
MO-220-VMMD-4
64-Lead
CP-64-3)
AD5735ACPZ
AD5735ACPZ-REEL7
XAL4040-103
star delta ladder diagram
adum1411
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Untitled
Abstract: No abstract text available
Text: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA and Voltage Output DAC with Dynamic Power Control AD5735 Data Sheet FEATURES On-chip dynamic power control minimizes package power dissipation in current mode. This reduced power dissipation is achieved by regulating the voltage on the output driver from
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12-Bit,
12-bit
AD5735
06-13-2012-C
MO-220-VMMD-4
64-Lead
CP-64-3)
AD5735ACPZ
AD5735ACPZ-REEL7
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Untitled
Abstract: No abstract text available
Text: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA and Voltage Output DAC with Dynamic Power Control AD5735 Data Sheet FEATURES On-chip dynamic power control minimizes package power dissipation in current mode. This reduced power dissipation is achieved by regulating the voltage on the output driver from
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12-Bit,
AD5735
12-bit
MO-220-VMMD-4
080108-C
64-Lead
CP-64-3)
AD5735ACPZ
AD5735ACPZ-REEL7
D09961-0-5/12
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2SA757
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA757 DESCRIPTION •High Power Dissipation: PC= 60W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -90V(Min.) APPLICATIONS ·Designed for use in audio amplifier power output stage and
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2SA757
2SA757
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Untitled
Abstract: No abstract text available
Text: BC327 VISHAY PNP EPITAXIAL PLANAR TRANSISTOR /uTE M ir I POWER SEMICONDUCTOR J Features Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation TO-92 Mechanical Data_
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BC327
625mW
MIL-STD-202,
DS21708
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2Sa756
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA756 DESCRIPTION •High Power Dissipation: PC= 50W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for use in audio amplifier power output stage and
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2SA756
2Sa756
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bc327 pnp
Abstract: No abstract text available
Text: BC327 PNP EPITAXIAL PLANAR TRANSISTOR POWER SEMICONDUCTOR Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation E A B C Mechanical Data • • • •
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BC327
625mW
MIL-STD-202,
20MHz
DS21708
bc327 pnp
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Untitled
Abstract: No abstract text available
Text: Reduction in Power Dissipation of Mos Static Shift Registers by Pulsing Device Supply Rails A pplication Report B97 ar\ Texas Instruments Limited • Manton Lane • Bedford • Phone 0234 67466 • Telex 82178 SUM M ARY This report shows that a reduction in power dissipation of each register to approximately 1/500 of the
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TMS3002
TMS310/LC/NC
TMS3102LC/NC
TMS3103LC/NC
TMS3112JC/NC
TMS3113JC/NC
TMS3114JC/NC
TMS3401LC/NC
TMS3402LC/NC
TMS3404JC/NC
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2SC898
Abstract: 2SA758
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA758 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min.) ·Complement to Type 2SC898 APPLICATIONS ·Designed for use in audio amplifier power output stage and
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2SA758
-110V
2SC898
2SC898
2SA758
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2sc898
Abstract: hfe1 Audio Output Transistor Amplifier 2SA758 transistor 2sc898
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA758 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min.) ·Complement to Type 2SC898 APPLICATIONS ·Designed for use in audio amplifier power output stage and
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2SA758
-110V
2SC898
-50mA;
2sc898
hfe1
Audio Output Transistor Amplifier
2SA758
transistor 2sc898
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S-17
Abstract: No abstract text available
Text: RADIO ¿/T U B E S' SÉ' 0347 POWER AMPLIFIER PENTODE T he ’47 is a power amplifier pentode for use in the audio output stage of a-c receivers. It is capable of giving large power output with a relatively small input signal voltage. In com parison with three-electrode power amplifiers of the same plate dissipation, the
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C-347
V0LTS-250
S-17
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LA3210
Abstract: LA3210 equivalent 405D
Text: Ordering number : EN 405D Monolithic Linearle Features . Low Noise Use. . Wide automatic level control range. . Good reduced voltage characteristics. Maximum Ratings at Ta=25°C Maximum Supply Voltage Allowable Power Dissipation Current Dissipation in Amplifier
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LA3210
600ohms
LA3210
LA3210 equivalent
405D
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AN-805
Abstract: DS26LS31 DS26LS31CN EIA-422 Calculating Power Dissipation
Text: INTRODUCTION In many board and system level designs, it is often necessary to determine the total power dissipated by the individual components of that application. This determination of total device power dissipation is important for two reasons. First, it can be used to select the power supply best suited to satisfy the needs of the application. And second, a power dissipation calculation facilitates the analysis of how the board or
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EIA-422
TIA/EIA-485
an011335
AN-805
DS26LS31
DS26LS31CN
Calculating Power Dissipation
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OF TRANSISTOR BC337
Abstract: BC337 leads
Text: BC337 VISHAY NPN EPITAXIAL PLANAR TRANSISTOR / u T E M ir I POWER SEMICONDUCTOR J Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation E J L A TO-92
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BC337
625mW
MIL-STD-202,
DS21610
OF TRANSISTOR BC337
BC337 leads
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RCA-47
Abstract: rca tube 47 rca 47
Text: RCA-47 POWER-AMPLIFIER PENTODE The 47 is a power-amplifier pen tode for use in the audio output stage of a-c receivers. In comparison with three-electrode Class A power ampli fiers of the same plate dissipation, the 47 is capable of greater output with the additional feature of higher amplification.
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RCA-47
RCA-47
rca tube 47
rca 47
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IC 7418
Abstract: IC 7418 by national semiconductor 7418 national 2n2222 RF Transistor 2n2222 PNP Transistor 2N2222 equivalent LM195 2N2222 application note emitter follower A-083081-2 tl 2n2222
Text: INTRODUCTION Overload protection is perhaps most necessary in power circuitry This is shown by recent trends in power transistor technology Safe-area voltage and current handling capability have been increased to limits far in excess of package power dissipation In RF transistors devices are now available and able to withstand badly mismatched loads without
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Untitled
Abstract: No abstract text available
Text: GaAs MMICs GN01063B GaAs IC with built-in ferroelectric Front-end IC of cellular phone +0.1 10-0.2–0.05 unit: mm 9 8 7 6 Power supply voltage Circuit current Max input power Allowable power dissipation Operating ambient temperature Storage temperature
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GN01063B
ESOF-10D
885MHz,
1015MHz)
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2N2222 die
Abstract: light activated switch 2N2222 application note emitter follower AN-110 LM105 LM195 2N2222 NPN Transistor features 12v bulb national 2n2222 equivalent component of transistor 2N2222
Text: INTRODUCTION Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area, voltage and current handling capability have been increased to limits far in excess of package power dissipation. In RF transistors, devices are now available and able to withstand badly mismatched loads without
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an007418
2N2222 die
light activated switch
2N2222 application note emitter follower
AN-110
LM105
LM195
2N2222 NPN Transistor features
12v bulb
national 2n2222
equivalent component of transistor 2N2222
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2SD1408
Abstract: OF IC 748 ic 748
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1408 POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . High Power Dissipation : Pc=25W Tc=25°C . Good Linearity of hpg . Complementary to 2SB1017 . Recommended for 2 0 ~ 2 5 W High Fidelity Audio Frequency Amplifier Output Stage.
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2SD1408
2SB1017
2SD1408
OF IC 748
ic 748
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