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    POWER FET LOW VOLTAGE Search Results

    POWER FET LOW VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation

    POWER FET LOW VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    pa1556ah

    Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
    Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET


    Original     		O-251/-252, O-220/-262 SC-96 SC-95 SC-96 OT-23) D10702EJAV0PF00 pa1556ah PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326 PDF

    C10535E

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4061 J-FET INPUT LOW-POWER OPERATIONAL AMPLIFIER DESCRIPTION The µPC4061 is a J-FET input low-power operational amplifier featuring low supply voltage operation from ±2 V. Supply current is ten times smaller than µPC4081 type J-FET input op-amp. With very low input bias current


    Original     		PC4061 PC4061 PC4081 C10535E PDF

    TL061

    Abstract: TL061I TL061C TL061IN TL061M TL061A TL061B
    Text: TL061 TL061A - TL061B LOW POWER J-FET SINGLE OPERATIONAL AMPLIFIER . . . . . VERY LOW POWER CONSUMPTION : 200µA WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT


    Original     		TL061 TL061A TL061B TL061, TL061B TL061 TL061I TL061C TL061IN TL061M PDF

    2SK2642-01MR

    Abstract: No abstract text available
    Text: 2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters


    Original     		2SK2642-01MR O-220F15 2SK2642-01MR PDF

    2SK3264

    Abstract: 2SK3264-01MR equivalent 2SK3264-01MR 2SK3264 datasheet 2sk3264-01
    Text: 2SK3264-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters


    Original     		2SK3264-01MR O-220F15 100ms 2SK3264 2SK3264-01MR equivalent 2SK3264-01MR 2SK3264 datasheet 2sk3264-01 PDF

    2SK2642

    Abstract: 2SK2642-01MR
    Text: 2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters


    Original     		2SK2642-01MR O-220F15 100ms 2SK2642 2SK2642-01MR PDF

    2sk2642

    Abstract: No abstract text available
    Text: 2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters


    Original     		2SK2642-01MR O-220F15 100ms 2sk2642 PDF

    2SK3264

    Abstract: 2SK3264-01MR equivalent
    Text: 2SK3264-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters


    Original     		2SK3264-01MR O-220F15 100ms 2SK3264 2SK3264-01MR equivalent PDF

    2SK2642

    Abstract: 2SK2642-01MR c40400
    Text: 2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters


    Original     		2SK2642-01MR O-220F15 100ms 2SK2642 2SK2642-01MR c40400 PDF

    XP134A11A1SR

    Abstract: No abstract text available
    Text: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state


    Original     		XP134A11A1SR XP134A11A1SR PDF

    XP133A0245SR

    Abstract: PCB405
    Text: XP133A0245SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0245SR is a N-Channel Power MOS FET with low on-state


    Original     		XP133A0245SR XP133A0245SR PCB405 PDF

    XP134A01A9SR

    Abstract: No abstract text available
    Text: XP134A01A9SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.19Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A01A9SR is a P-Channel Power MOS FET with low on-state


    Original     		XP134A01A9SR XP134A01A9SR PDF

    XP133A1145SR

    Abstract: No abstract text available
    Text: XP133A1145SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A1145SR is a N-Channel Power MOS FET with low on-state


    Original     		XP133A1145SR XP133A1145SR PDF

    XP133A0175SR

    Abstract: No abstract text available
    Text: XP133A0175SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.075Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0175SR is a N-Channel Power MOS FET with low on-state


    Original     		XP133A0175SR XP133A0175SR PDF

    mosfet 2sk

    Abstract: 2SK724 SC-65 2sk 100a 2sk mosfet
    Text: 2SK724 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES ■Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators


    OCR Scan     		2SK724 SC-65 mosfet 2sk 2SK724 SC-65 2sk 100a 2sk mosfet PDF

    a2240

    Abstract: tt6090 2SK1663-L A2241 FUJI TTL
    Text: 2SK1663-LS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET • Features ^ SERIES ^ ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■ Applications • Sw itching regulators


    OCR Scan     		2SK1663-LS a2240 tt6090 2SK1663-L A2241 FUJI TTL PDF

    pj 899 diode

    Abstract: pj 899 2SK899 SC-65 T151 A213
    Text: 2SK899 FUJI POWER MOS FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators • UPS


    OCR Scan     		2SK899 SC-65 Tc-25 pj 899 diode pj 899 2SK899 SC-65 T151 A213 PDF

    GL 40 R

    Abstract: SEJ7 p channel mosfet fi F5.5M
    Text: 2SK724 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators


    OCR Scan     		2SK724 GL 40 R SEJ7 p channel mosfet fi F5.5M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK903-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators


    OCR Scan     		2SK903-MR PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1547-01 MR FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET _ - „ _ F-II SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage


    OCR Scan     		2SK1547-01 PDF

    2sk mosfet

    Abstract: 2SK904
    Text: 2SK904 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators


    OCR Scan     		2SK904 2sk mosfet 2SK904 PDF

    2sk20

    Abstract: s630t 2SK2026
    Text: 2SK2026-01 fS^SO FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET _ - FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage


    OCR Scan     		2SK2026-01 20Kf2) 2sk20 s630t 2SK2026 PDF

    2sk725 equivalent

    Abstract: 2SK725 2sk 725 SC-65 T151
    Text: 2SK725 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators • UPS


    OCR Scan     		2SK725 SC-65 Tc-25Â 2sk725 equivalent 2SK725 2sk 725 SC-65 T151 PDF

    L 0929

    Abstract: s 0934 91564
    Text: HSXAWAVS HWL34YRA L-Band Power GaAs FET Hexawave, Inc. Description Outline Dimensions The HWL34YRA is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. 1.625 0 .065 Features • Low Cost GaAs Power FET


    OCR Scan     		HWL34YRA HWL34YRA L 0929 s 0934 91564 PDF