sars03
Abstract: sars03 diode STR-E1555 STR-E1565 200W MOSFET POWER AMP SE024N str TV SMPS sars0 sanken hybrid Sanken CROSS
Text: PFC/DC-DC Systematic Combo Power IC STR-E1555 March, 2006 •General Description ■Package-SLA21Pin STR-E1555 is a Hybrid IC power-factor-corrected switching mode power supply SMPS . Start-up circuit and a controller of PFC and DC/DC parts are built in one chip. In addition,
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STR-E1555
Package---SLA21Pin
STR-E1555
I02-005EA-060322
sars03
sars03 diode
STR-E1565
200W MOSFET POWER AMP
SE024N
str TV SMPS
sars0
sanken hybrid
Sanken CROSS
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XRF184
Abstract: MRF184 173 MHz RF CHIP 305 Power Mosfet MOTOROLA
Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistor MRF184 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device
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MRF184/D
MRF184
MRF184/D*
XRF184
MRF184
173 MHz RF CHIP
305 Power Mosfet MOTOROLA
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Untitled
Abstract: No abstract text available
Text: IXUN 280N10 Advanced Technical Information VDSS = 100 V ID25 = 280 A Ω typ. RDS(on) = 3.9 mΩ Trench Power MOSFET Very low RDS(on) SOT-227 B, miniBLOC D KS G G S KS S D G = Gate S = Source D = Drain KS = Kelvin Source Features Symbol Conditions VDSS TJ = 25°C to 150°C
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280N10
OT-227
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Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the
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MRF6522â
MRF6522-10R1
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MRF151G
Abstract: L8776 Nippon capacitors rf amplifier circuit mrf151g
Text: MOTOROLA O rder this docum ent by M RF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF151G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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RF151G/D
MRF151G
L8776
Nippon capacitors
rf amplifier circuit mrf151g
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5252 F 0911
Abstract: 5252 F mosfet 5252 F 0918 1030F
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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RF power amplifier 49 MHz
Abstract: No abstract text available
Text: MOTOROLA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics
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MRF166W/D
MRF166W
MRF166W/D
RF power amplifier 49 MHz
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MRF1518
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF1518/D
MRF1518T1
DEVICEMRF1518/D
MRF1518
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A07T
Abstract: MRF1508 MRF1508T1 a06t 520 uF variable capacitor motorola AN211A A05T-5 MRF1508 equivalent Nippon capacitors RF1508
Text: MOTOROLA RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY The MRF1508 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source
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MRF1508/D
MRF1508
MRF1508T1
DEVICEMRF1508/D
A07T
a06t
520 uF variable capacitor
motorola AN211A
A05T-5
MRF1508 equivalent
Nippon capacitors
RF1508
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IDG200
Abstract: No abstract text available
Text: ERICSSON $ PTE 10035* 30 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10035 is an internally matched common source n-channel en hancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum
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P4917-ND
P5276
5801-PC
IDG200
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.
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UTT150N06
UTT150N06
102nC)
O-220
QW-R502-512
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SSG4542C
Abstract: MosFET 1NA22 td 1583 N and P MOSFET
Text: SSG4542C N-Ch: 8.3 A, 40 V, RDS ON 14 m P-Ch: -7.6 A, -40 V, RDS(ON) 28 m N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs
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SSG4542C
27eCoSGmbH
27-Dec-2010
SSG4542C
MosFET
1NA22
td 1583
N and P MOSFET
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M RF184/D SEMICONDUCTOR TECHNICAL DATA MRF184 MRF184S, R1 The RF MOSFET Line RF POWER Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen
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RF184/D
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IRF1405 N-Channel Power Mosfet
Abstract: IRF1405 "anti lock braking system" IRF1405 equivalent IRF1405 N-Channel PD-93991D irf1405 mosfet
Text: PD-93991D IRF1405 AUTOMOTIVE MOSFET Typical Applications O O O O O Benefits O O O O O O HEXFET Power MOSFET Electric Power Steering EPS Anti-lock Braking System (ABS) Wiper Control Climate Control Power Door Advanced Process Technology Ultra Low On-Resistance
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PD-93991D
IRF1405
O-220AB
IRF1405 N-Channel Power Mosfet
IRF1405
"anti lock braking system"
IRF1405 equivalent
IRF1405 N-Channel
PD-93991D
irf1405 mosfet
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2SK3648
Abstract: 2sk3648 equivalent 48v 50a power supply L228
Text: 2SK3648-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3648-01
O-220AB
2SK3648
2sk3648 equivalent
48v 50a power supply
L228
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motorola MOSFET 935
Abstract: XRF184 MRF184 MRF184S 173 MHz RF CHIP
Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF184/D
MRF184
MRF184S
motorola MOSFET 935
XRF184
MRF184S
173 MHz RF CHIP
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Untitled
Abstract: No abstract text available
Text: 2SK3649-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3649-01MR
O-220F
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2sk3537
Abstract: 2SK3537-01MR
Text: 2SK3537-01MR 200304 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3537-01MR
O-220F
2sk3537
2SK3537-01MR
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Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF184/D
MRF184
MRF184SR1
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Untitled
Abstract: No abstract text available
Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT10M11JVRU2
OT-227)
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isotop mosfet 100V
Abstract: APT10M11JVRU2
Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT10M11JVRU2
OT-227)
isotop mosfet 100V
APT10M11JVRU2
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SMD 6 PIN IC MARKING CODE z1
Abstract: 555 n-mosfet N-mosfet P-mosfet pair SC4602A SC4602AIMSTR SC4602AIMSTRT SC4602BIMSTR SC4602BIMSTRT TRANSISTOR SMD MARKING CODE R8 fairchild smd marking code
Text: SC4602A/B High Efficiency Synchronous, Step Down Controller POWER MANAGEMENT Description Features The SC4602A/B is a voltage mode step down buck regulator controller that provides accurate high efficiency power conversion from an input supply range of 2.75V
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SC4602A/B
SC4602A/B
MO-187,
SMD 6 PIN IC MARKING CODE z1
555 n-mosfet
N-mosfet P-mosfet pair
SC4602A
SC4602AIMSTR
SC4602AIMSTRT
SC4602BIMSTR
SC4602BIMSTRT
TRANSISTOR SMD MARKING CODE R8
fairchild smd marking code
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MOSFET Module 100v 1000A
Abstract: APT10M11JVRU3 SOT-227 heatsink
Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon
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APT10M11JVRU3
OT-227)
MOSFET Module 100v 1000A
APT10M11JVRU3
SOT-227 heatsink
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ISOTOP
Abstract: APT5010JVRU3
Text: APT5010JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 44A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon
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APT5010JVRU3
OT-227)
ISOTOP
APT5010JVRU3
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