power mosfet 350v 30a to 247
Abstract: No abstract text available
Text: Power MOSFET IXKK85N60C CoolMOSTM Superjunction MOSFET VDSS ID25 RDS on D Low RDS(on), High Voltage = = ≤ 600V 85A Ω 36mΩ G S TO-264 G D S Symbol Test Conditions VDSS TJ = 25°C Maximum Ratings 600 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C
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IXKK85N60C
O-264
ID100
power mosfet 350v 30a to 247
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47N60C
Abstract: 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100
Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
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47N60C
O-247
E72873
ID100
20080523a
47N60C
47n60
power mosfet 350v 30a to 247
UPS SIEMENS
E72873
ID100
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47N60C
Abstract: No abstract text available
Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 m Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G fl D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
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47N60C
O-247
E72873
ID100
20080523a
47N60C
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Untitled
Abstract: No abstract text available
Text: APT47N65BC3 650V 47A 0.070 Super Junction MOSFET TO -24 7 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package All Ratings: TC = 25°C unless otherwise specified.
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APT47N65BC3
O-247
APT30DF60
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DD2030
Abstract: 650V power mosfet 350v 30a to 247
Text: APT47N65BC3 600V 47A 0.070Ω Super Junction MOSFET TO COOLMOS -24 7 Power Semiconductors D3 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package
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APT47N65BC3
O-247
DD2030
650V
power mosfet 350v 30a to 247
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Untitled
Abstract: No abstract text available
Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60BDF1
O-247
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Untitled
Abstract: No abstract text available
Text: APT47N65BC3 650V 47A 0.070Ω Super Junction MOSFET TO -24 7 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package All Ratings: TC = 25°C unless otherwise specified.
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APT47N65BC3
O-247
APT47N65BC3
APT30DF60
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30GP60BDF1
Abstract: No abstract text available
Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60BDF1
O-247
T0-247
30GP60BDF1
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30GP60BDF1
Abstract: 30GP
Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60BDF1
O-247
T0-247
30GP60BDF1
30GP
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APT30GP60BDF1
Abstract: No abstract text available
Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60BDF1
O-247
APT30GP60BDF1
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Untitled
Abstract: No abstract text available
Text: APT47N60BC3 G APT47N60SC3(G) 600V 47A 0.070 TO Super Junction MOSFET -24 7 D 3 PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 package.
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APT47N60BC3
APT47N60SC3
O-247
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APT47N60BC3
Abstract: APT47N60SC3
Text: APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS
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APT47N60BC3
APT47N60SC3
O-247
O-247
APT47N60BC3
APT47N60SC3
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94n60
Abstract: IXKK94N60C3 94N60C3 UPS SIEMENS ID100
Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKK 94N60C3 VDSS = 600 V ID25 = 94 A Ω RDS on = 35 mΩ Low RDS(on), High Voltage, Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1
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94N60C3
ID100
O-264
728B1
065B1
123B1
94n60
IXKK94N60C3
94N60C3
UPS SIEMENS
ID100
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85N60C
Abstract: CoolMOS Power Transistor ID100 UPS SIEMENS
Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKK 85N60C VDSS = 600 V = 85 A ID25 Ω RDS on = 36 mΩ Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Symbol Test Conditions Maximum Ratings TO-264 VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20
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85N60C
ID100
O-264
85N60C
CoolMOS Power Transistor
ID100
UPS SIEMENS
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKK 94N60C VDSS = 600 V ID25 = 94 A Ω RDS on = 35 mΩ Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25
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94N60C
ID100
O-264
reduce80
728B1
065B1
123B1
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Untitled
Abstract: No abstract text available
Text: APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω Super Junction MOSFET COOL MOS Po we r Se miconduc tors • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package
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APT47N65BC3
APT47N65SC3
O-247
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relay finder 45.61
Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
Safety10
A331-1-C2A7M
A331-1-C2-A73
24Vdc
110Vac
240Vac
A331-1-C2-A7D
relay finder 45.61
reed 3500 2301 151
MT2C93419
reed 3500 2301
tyco igbt module 25A 1200V
5V SPST DIL Reed Relay
Transistor tag 9013
Triac TAG 9013
3258 smd led
varistor BS415
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schematic diagram 230VAC to 24VDC POWER SUPPLY
Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element14
schematic diagram 230VAC to 24VDC POWER SUPPLY
48V 30A SPDT RELAY
IM03D
PCH-124
N mosfet 250v 600A
VARISTOR 275 L20
PA66 - GF 25 relay
marking code W16 SMD Transistor
90W 19.5V Power Adapter pcb
G6CU-2117P
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1500w audio amplifier circuit
Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004 General Information ON Semiconductor Standard Policies
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SGD501/D
74VCX16373DT
74VCX16373DTR
74VCX16374DT
16BIT
74VCX16374DTR
80SQ045N
80SQ045NRL
1500w audio amplifier circuit
Schottky Diode 80V 6A
1500w PWM 220v
C106MG
marking code SS SOT23
tl494cn inverter datasheet
smps 1500W
MMSZ5231BT1G
dc 220v motor speed control circuit with scr
NCP1200P60G
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CS5170
Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
Text: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004 General Information Elimination Of Ozone Depleting Chemicals . . . .
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SGD501/D
74VCX16373DT
74VCX16373DTR
74VCX16374DT
16BIT
74VCX16374DTR
80SQ045N
80SQ045NRL
CS5170
MUR1620CTA
NTP3055
SBRS81100T3G
MC1741CP
2N5458 SUBSTITUTE
SPEED CONTROL of DC MOTOR tda1085c
DIODE SWCH 100V SS SOT23 TR
znr SF 471
NCP1200AP60
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ANA 618
Abstract: voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE
Text: SGD501/D REV 13, April 12, 2003 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION - Please see General Information Section EFFECTIVE DATE: APRIL 12, 2003 General Information Elimination Of Ozone Depleting Chemicals . . . .
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SGD501/D
ANA 618
voltage regulator ana 618
NZSMB15CAT3
GP 809 DIODE
1500w audio amplifier circuit
SPEED CONTROL of DC MOTOR tda1085c
CS5170
ANA 618* voltage regulator
12 VOLT 2 AMP smps
diode 1n4007 MIC MAKE
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CS5170
Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .
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SGD501/D
Janua667
CS5170
mps2112
MPS2112ZL1
100A 300V IGBT
MC3346P
CS4124YDW16
ON Semiconductor PRICE BOOK
12V to 220V smps inverter
bd234
igbt ac motor speed control
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complementary MOSFET 2sk
Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V
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DC12V
DC24V
DC48V
AC100V
AC200V
0-60V)
2SJ487
2SK2816
2SJ488
2SJ489
complementary MOSFET 2sk
transistor+2sk
2SK series
2SK 20a 600v
2sk 1181
2SK 150A
2SK+series
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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