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    POWER MOSFET IRF240 Search Results

    POWER MOSFET IRF240 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET IRF240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet IRF240

    Abstract: mosfet to3 IRF240 LE17 power MOSFET IRF240
    Text: N-CHANNEL POWER MOSFET IRF240 • Low RDS on MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF IRF240 O-204AE) mosfet IRF240 mosfet to3 IRF240 LE17 power MOSFET IRF240

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRF240 • Low RDS on MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF IRF240 O-204AE)

    datasheet for driver circuit for mosfet IRF240

    Abstract: IRF240 TA17422 TB334
    Text: IRF240 Data Sheet March 1999 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET • 18A, 200V Formerly developmental type TA17422. Ordering Information PACKAGE 1584.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFETs designed,


    Original     		PDF IRF240 TA17422. datasheet for driver circuit for mosfet IRF240 IRF240 TA17422 TB334

    mosfet to3

    Abstract: IRF240 irf240 data free download mosfet IRF240
    Text: IRF240 MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)


    Original     		PDF IRF240 O204AA) mosfet to3 IRF240 irf240 data free download mosfet IRF240

    power MOSFET IRF240

    Abstract: mosfet IRF240 IRF240 FET
    Text: IRF240 MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)


    Original     		PDF IRF240 IRF240" IRF240 IRF240-JQR-B IRF240SMD IRF240SMD-JQR-B O276AB) 600pF power MOSFET IRF240 mosfet IRF240 IRF240 FET

    mosfet to3

    Abstract: IRF240
    Text: IRF240 MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)


    Original     		PDF IRF240 00A/ms mosfet to3 IRF240

    IRF240SM

    Abstract: No abstract text available
    Text: SEME IRF240SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 200V 13.9A 0.180W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF


    Original     		PDF IRF240SM 220SM 00A/ms 300ms, IRF240SM

    IRF240

    Abstract: mosfet IRF240
    Text: PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE IRF240 200V, N-CHANNEL Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF O-204AA/AE) IRF240 IRF240 mosfet IRF240

    Untitled

    Abstract: No abstract text available
    Text: PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE IRF240 200V, N-CHANNEL Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF O-204AA/AE) IRF240

    Untitled

    Abstract: No abstract text available
    Text: S EM E IRF240SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


    Original     		PDF IRF240SMD 00A/ms 300ms,

    IRF240SMD

    Abstract: No abstract text available
    Text: SEME IRF240SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


    Original     		PDF IRF240SMD 00A/ms 300ms, IRF240SMD

    irf630 irf640

    Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
    Text: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший


    Original     		PDF 220AB 0RFP25N05 RFP50N05 RFP22N10 RFP40N10 IRFP450 IRFP460 IRFPG40 IRF9510 irf630 irf640 IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    IRF240

    Abstract: No abstract text available
    Text: £>£.m.L-C.on.au.c.koi L/^r , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF240 200V, N-CHANNEL Product Summary


    Original     		PDF O-204AA/AE) IRF240 IRF240

    lg diode 88A

    Abstract: IRF240SM
    Text: im iF F i mi SEME IRF240SM LAB MECHANICAL DATA Dimensions in mm inches 11.5 («— ► 3.5 1 t ' k 1 r !1 2.0 N-CHANNEL POWER MOSFET -►i — 3.5 4 ¥ 200V V Dss 0.25 13.9A ^D(cont) 3.0 0 .1 8 0 0 ^DS(on) FEATURES 3 • HERMETICALLY SEALED SURFACE MOUNT PACKAGE


    OCR Scan     		PDF IRF240SM TQ-220SM 300ms, lg diode 88A IRF240SM

    IRF240

    Abstract: SFF240-28 mosfet IRF240
    Text: SUM PRELIMINARY SFF240-28 SOLID STATE DEVICES, INC 14849 Firestone Boulevard La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 /'• / / 15 AMP 200 VOLTS 0.20Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: ■ ■ ■ ■ ■


    OCR Scan     		PDF SFF240-28 670-SSDI IRF240 /-J01 F00107A SFF240-28 mosfet IRF240

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    mosfet IRF240

    Abstract: IRF242 IRF240 IRF241 IRF243
    Text: Standard Power MOSFETs- IRF240, IRF241, IRF242, IRF243 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 16 A and 18 A, 150 V - 200 V rDsion» - 0.18 Q and 0.22 O


    OCR Scan     		PDF IRF240, IRF241, IRF242, IRF243 IRF243 08TAIN mosfet IRF240 IRF242 IRF240 IRF241

    mosfet IRF240

    Abstract: IRF241 irf240 IRF243 power MOSFET IRF240
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF240 IRF241 IRF243 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Power FETs are designed for low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		PDF IRF240 IRF241 IRF243 97A-02 O-204AE IRF240, mosfet IRF240 IRF243 power MOSFET IRF240

    IRF243

    Abstract: IRF240 IRF242 mosfet IRF240 IRF241
    Text: 7964.14 2 „ S A M S U N G S E M I C O N D U C T O R \ Tfl DE 17Tbm4S DDOSCm 4 | IRF240/241/242/243 IN C 98 D 0 5 0 9 9 - — D N-CHANNEL POWER MOSFETS FEATURES • • • • « • • • Low RDS on Improved inductive ruggedness Fast switching times


    OCR Scan     		PDF IRF240/241/242/243 IRF240 IRF241 IRF242 IRF243 mosfet IRF240

    1RF242

    Abstract: mosfet IRF240 DIODE M4A irf240 IRF242 1rf240
    Text: \ 7964.14 2 „ S A M S U N G S E M I C O N D U C T O R Tfl DE 17Tbm4S DDOSCm 4 | - — IRF240/241/242/243 IN C 98 D 0 5 0 9 9 D N-CHANNEL POWER MOSFETS FEATURES • • • • « • • • Low RDS on Improved inductive ruggedness Fast switching times


    OCR Scan     		PDF 17Tbm4S IRF240/241/242/243 IRF240 IRF241 IRF242 IRF243 00GS435 1RF242 mosfet IRF240 DIODE M4A 1rf240

    irf240

    Abstract: No abstract text available
    Text: HE D I «1055455 INTERNATIONAL OQÛ'JOIt, 3 | Data Sheet No. PD-9.370F RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF240 IRF241 IRF242 IM-CHANNEL 200 Volt, 0.18 Ohm HEXFET T0-204AE TO-3 Hermetic Package


    OCR Scan     		PDF IRF240 IRF241 IRF242 T0-204AE IRF243 IRF240, IRF241, irf240

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


    OCR Scan     		PDF DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit