2N6901
Abstract: No abstract text available
Text: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM
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2N6901
O-205AF)
2N6901
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Untitled
Abstract: No abstract text available
Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 6105D K8 /Subject (5A, 30V, 0.050 Ohm, Dual NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Dual NChannel,
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HUF76105DK8
6105D
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intersil 76131SK8
Abstract: AN9321 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Text: HUF76131SK8 TM Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76131SK8
mana15mm)
MS-012AA
330mm
EIA-481
intersil 76131SK8
AN9321
HUF76131SK8
HUF76131SK8T
MS-012AA
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF76121SK8 Data Sheet January 2003 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76121SK8
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AN7254
Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Text: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76105SK8
AN7254
AN9321
AN9322
HUF76105SK8
HUF76105SK8T
MS-012AA
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76113T3ST
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rs808
Abstract: 725P AN7254 AN9321 AN9322 HUF76112SK8 HUF76112SK8T MS-012AA TB334 pspice model gate driver
Text: HUF76112SK8 Data Sheet April 2000 File Number 4834.1 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET [ /Title HUF7 6112S K8 /Subject (7.5A, 30V, 0.026 Ohm, NChannel, Logic Level Power MOSFET) /Autho r () /Keywords (7.5A, 30V, 0.026 Ohm, NChannel,
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HUF76112SK8
6112S
HUF76112SK8
rs808
725P
AN7254
AN9321
AN9322
HUF76112SK8T
MS-012AA
TB334
pspice model gate driver
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PDF
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AN7254
Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Text: HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76132SK8
AN7254
AN9321
AN9322
HUF76132SK8
HUF76132SK8T
MS-012AA
TB334
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PDF
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AN9321
Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337
Text: HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113SK8
AN9321
AN9322
HUF76113SK8
HUF76113SK8T
MS-012AA
TB334
TB337
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PDF
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n13 sot 23
Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Text: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76113T3ST
OT-223
330mm
100mm
EIA-481
n13 sot 23
44E10
AN7254
AN7260
AN9321
AN9322
HUF76113T3ST
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF76105DK8 Data Sheet October 1999 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4380.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76105DK8
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TA7613
Abstract: AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Text: HUF76131SK8 Data Sheet December 2001 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76131SK8
TA7613
AN9321
AN9322
HUF76131SK8
HUF76131SK8T
MS-012AA
TB334
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PDF
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AN7254
Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Text: HUF76132SK8 Data Sheet December 2001 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76132SK8
AN7254
AN9321
AN9322
HUF76132SK8
HUF76132SK8T
MS-012AA
TB334
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PDF
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3055L transistor
Abstract: Mosfet Sot223
Text: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,
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RFT3055LE
TA49158.
RFT3055LE
OT-223
330mm
EIA-481
3055L transistor
Mosfet Sot223
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AN9321
Abstract: AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Text: HUF76131SK8 Data Sheet January 2003 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76131SK8
AN9321
AN9322
HUF76131SK8
HUF76131SK8T
MS-012AA
TB334
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PDF
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AN7254
Abstract: AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA TB370
Text: HUF76121SK8 Data Sheet April 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76121SK8
AN7254
AN9321
AN9322
HUF76121SK8
HUF76121SK8T
MS-012AA
TB370
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PDF
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AN9321
Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 TC-2121
Text: HUF76113SK8 Data Sheet December 2001 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113SK8
AN9321
AN9322
HUF76113SK8
HUF76113SK8T
MS-012AA
TB334
TB337
TC-2121
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PDF
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AN7254
Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Text: HUF76105SK8 Data Sheet January 2003 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76105SK8
AN7254
AN9321
AN9322
HUF76105SK8
HUF76105SK8T
MS-012AA
TB334
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PDF
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76113
Abstract: AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Text: HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113T3ST
76113
AN7254
AN7260
AN9321
AN9322
HUF76113T3ST
TB334
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PDF
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TB370
Abstract: AN7254 AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA
Text: HUF76121SK8 Data Sheet December 2001 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76121SK8
TB370
AN7254
AN9321
AN9322
HUF76121SK8
HUF76121SK8T
MS-012AA
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PDF
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TA7611
Abstract: TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST
Text: HUF76113T3ST Data Sheet December 2001 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113T3ST
TA7611
TB334
AN7254
AN7260
AN9321
AN9322
HUF76113T3ST
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PDF
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AN9321
Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 KP-37
Text: HUF76113SK8 Data Sheet October 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4448.2 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76113SK8
AN9321
AN9322
HUF76113SK8
HUF76113SK8T
MS-012AA
TB334
TB337
KP-37
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PDF
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Saber
Abstract: TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST
Text: HUF76113T3ST interrii June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features Logic Level Gate Drive # This N-Channel power MOSFET is manufactured using the innovative &WMW W UltraFET process. This advanced * process technology achieves the
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HUF76113T3ST
TB334,
OT-223
Saber
TB334
relay spice model
mosfet 407
76113
Power MOSFET SOT-223
Power logic MOSFET SOT-223
power relay N-channel mosfet
Logic Level N-Channel Power MOSFET
HUF76113T3ST
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PDF
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61E2
Abstract: No abstract text available
Text: HUF76131SK8 November 1998 Data Sheet 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative w UltraFET process. This advanced
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OCR Scan
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HUF76131SK8
HUF76131SK8
MS-012AA
61E2
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PDF
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