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    POWER MOSFET RISE TIME 1000V NS Search Results

    POWER MOSFET RISE TIME 1000V NS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET RISE TIME 1000V NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET 1000v 30a

    Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
    Text: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


    Original     		PDF OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 OM9027SP1 OM90Surge 300msec, MOSFET 1000v 30a 10A, 100v fast recovery diode OM9029SP1 OM9030SP1 diode 1000V 10a

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA8N100C 1000V N-Channel MOSFET Features Description • 8A, 1000V, RDS on = 1.45Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 53 nC)


    Original     		PDF FQA8N100C FQA8N100C

    FQA8N100C

    Abstract: mosfet 1000v 100A 1000V mosfet fqa8n100
    Text: QFET FQA8N100C 1000V N-Channel MOSFET Features Description • 8A, 1000V, RDS on = 1.45Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 53 nC)


    Original     		PDF FQA8N100C FQA8N100C mosfet 1000v 100A 1000V mosfet fqa8n100

    FQA8N100C

    Abstract: mosfet 1000v 100A 1000V mosfet
    Text: QFET FQA8N100C 1000V N-Channel MOSFET Features Description • 8A, 1000V, RDS on = 1.45Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 53 nC)


    Original     		PDF FQA8N100C FQA8N100C mosfet 1000v 100A 1000V mosfet

    100A 1000V mosfet

    Abstract: No abstract text available
    Text: APTMC170AM30CT1AG VDSS = 1700V RDSon = 30mΩ max @ Tj = 25°C ID = 106A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC170AM30CT1AG 100A 1000V mosfet

    Untitled

    Abstract: No abstract text available
    Text: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC170AM60CT1AG

    1000V 25A Mosfet

    Abstract: MOSFET 1000v 30a p-channel 250V 30A power mosfet OM6219SP1 OM6220SP1 OM6221SP1 OM6222SP1 POWER MOSFET Rise Time 1000V NS tf 115 250v 20 a
    Text: OM6219SP1 OM6221SP1 OM6220SP1 OM6222SP1 DUAL UNCOMMITTED POWER MOSFETS IN LOW PROFILE PLASTIC POWER PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFETs With Low RDS on Characteristics FEATURES • • • • • • • Isolated High Density Package


    Original     		PDF OM6219SP1 OM6221SP1 OM6220SP1 OM6222SP1 300msec, 1000V 25A Mosfet MOSFET 1000v 30a p-channel 250V 30A power mosfet OM6221SP1 OM6222SP1 POWER MOSFET Rise Time 1000V NS tf 115 250v 20 a

    mosfet 1000v

    Abstract: FQH8N100C 800V 40A power mosfet full bridge
    Text: QFET FQH8N100C 1000V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQH8N100C mosfet 1000v FQH8N100C 800V 40A power mosfet full bridge

    MOSFET 1000v 30a

    Abstract: OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 p-channel 250V 30A power mosfet
    Text: OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 FOUR UNCOMMITTED POWER MOSFETS IN ISOLATED LOW PROFILE PLASTIC PACKAGE Four Uncommitted 100V To 1000V, Up To 30A N-Channel Power MOSFETs In One Package FEATURES • • • • • • Isolated High Density Package High Current


    Original     		PDF OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 300msec, MOSFET 1000v 30a OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 p-channel 250V 30A power mosfet

    ka3525 12v to 230v inverters circuit diagrams

    Abstract: smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram
    Text: AC/DC Switch Mode Power Supply Design Guide www.fairchildsemi.com AC/DC Switch Mode Power Supply Design Guide Table Of Contents Product Information Total


    Original     		PDF Power247TM, ka3525 12v to 230v inverters circuit diagrams smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram

    irfcg20

    Abstract: HV MOSFET
    Text: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. C HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION


    Original     		PDF SCP-4926 BYV26E IRFCG20 HV MOSFET

    IRFCG20

    Abstract: MOSFET 50 amp 1000 volt
    Text: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. C HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER POWER MOSFETS Q1,…,6


    Original     		PDF SCP-4926 Isol1138, BYV26E IRFCG20 MOSFET 50 amp 1000 volt

    OM6005

    Abstract: OM6034NM OM6035NM OM6036NM OM6037NM OM6106 OM6006
    Text: OM6034NM OM6036NM OM6035NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current


    Original     		PDF OM6034NM OM6036NM OM6035NM OM6037NM MIL-S-19500, OM6005 OM6036NM OM6037NM OM6106 OM6006

    Untitled

    Abstract: No abstract text available
    Text: OM6034NM OM6036NM OM6035NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current


    Original     		PDF OM6034NM OM6036NM OM6035NM OM6037NM MIL-S-19500,

    Untitled

    Abstract: No abstract text available
    Text: OM9027SP1 OM9029SP1 OM9Q28SP1 QM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 10 0 V T h r u 1000V. 4A To 3 0 A P o w e r M O S F E T A n d High S p e e d R ect ifi er In O n e P a c k a g e FEATURES • • • • • M OSFET And Common Cathode Rectifier In One Package


    OCR Scan     		PDF OM9027SP1 OM9029SP1 OM9Q28SP1 QM9030SP1 OM9027 OM9028 OM9029 OM9030 300/jsec,

    Untitled

    Abstract: No abstract text available
    Text: OM9Û27SP1 OM9 29SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30 A Power M O S F E T And High Spee d Rectifier In On e Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


    OCR Scan     		PDF 27SP1 29SP1 OM9Q28SP1 OM9030SP1 OM9027SP1 OM9028SPCurrent'

    POWER MOSFET Rise Time 1000V NS

    Abstract: MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 OM9Q27SP1
    Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • M O S F E T And Common Cathode Rectifier In O ne Package


    OCR Scan     		PDF OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 300/jsec, 100-TYP. 205Crawford 00011b3 POWER MOSFET Rise Time 1000V NS MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9028SP1 OM9030SP1 OM9Q27SP1

    Untitled

    Abstract: No abstract text available
    Text: OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1 DUAL UNCOMMITTED POWER MOSFETS IN LOW PROFILE PLASTIC POWER PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFETs With Low RDS on Characteristics FEATURES • • • • • • • Isolated High Density Package


    OCR Scan     		PDF OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1 534-5776FAX

    Untitled

    Abstract: No abstract text available
    Text: OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 FOUR UNCOMMITTED POWER MOSFETS IN ISOLATED LOW PROFILE PLASTIC PACKAGE Four Uncommitted 100V To 1000V, Up To 30A N-Channel Power MOSFETs In One Package FEATURES • • • • • • Isolated High Density Package High Current


    OCR Scan     		PDF OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 energ025 300/isec,

    MOSFET 1000v 30a

    Abstract: 1000V P-channel MOSFET ic AM 12A OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 6015-a
    Text: OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 FOUR UNCOMMITTED POWER MOSFETS IN ISOLATED LOW PROFILE PLASTIC PACKAGE \V M Four Uncommitted 100V To 1000V, Up To 30A N-Channel Power MOSFETs In One Package W FEATURES • • • • • • Isolated High Density Package


    OCR Scan     		PDF OM6223SP2 OM6225SP2 OM6224SP2 OM6226SP2 300f/sec, 400-j b76clD MOSFET 1000v 30a 1000V P-channel MOSFET ic AM 12A OM6226SP2 6015-a

    FS-10 16A

    Abstract: p-channel 250V 30A power mosfet
    Text: OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1 DUAL UNCOMMITTED POWER MOSFETS IN LOW PROFILE PLASTIC POWER PACKAGE 100V Thru 1000V. Up To 30 Am p. N-Channel M OS FE Ts With L o w RDS 0n C h a r a c t e r is t ic s FEATURES Isolated High Density Package High Current Dual MOSFETs


    OCR Scan     		PDF OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1 energy125 OM6219 OM6220 OM6221 OM6222 300/isec, FS-10 16A p-channel 250V 30A power mosfet

    Untitled

    Abstract: No abstract text available
    Text: OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1 DUAL UNCOMMITTED POWER MOSFETS IN LOW PROFILE PLASTIC POWER PACKAGE 100V Thru 1000V. Up To 30 Amp, N-Channel M O SFETs With Low Ros on Characteristics FEATURES Isolated High Density Package High Current Dual MOSFETs


    OCR Scan     		PDF OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1

    Untitled

    Abstract: No abstract text available
    Text: OM6227SS OM6230SS OM6232SS OM6228SS OM6231SS OM6233SS DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 400V, 500V, 1000V, Up To 24 Amp N-Channel, Dual Size 6 High Energy MOSFETs FEATURES • • • • • • • Dual Uncommitted MOSFETs


    OCR Scan     		PDF OM6227SS OM6230SS OM6232SS OM6228SS OM6231SS OM6233SS MIL-S-19500, b7fiTD73

    OM6034NM

    Abstract: OM6035NM OM6036NM OM6106
    Text: OM6034NM OM6036NM OM6Q35NM OM6Q37NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Am p, N-Channel MOSFET In A S urface M ount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current


    OCR Scan     		PDF OM6Q35NM OM6036NM OM6Q37NM MIL-S-19500, 300/isec, 534-5776FAX OM6034NM OM6035NM OM6106