TRANSISTOR N3
Abstract: N3 transistor
Text: RADPAL POWER-ON-RESET PERFORMANCE AT COLD TEMPERATURES 11/3/97 Power-On-Reset UTMC’s RADPAL device is designed to reset all of the I/O registers on power up. A functional limitation has been observed in the product relating to the Power-On-Reset circuit at cold
|
Original
|
-55oC
125oC
TRANSISTOR N3
N3 transistor
|
PDF
|
jc100a1
Abstract: FC150A MW010a JC100A remote control 555 MC005A FE200 MH010 MC-010A fw300a1
Text: Application Note September 1997 Design Guidelines for Power Module Remote On/Off Circuits Introduction Isolated-Closure Remote On/Off The remote on/off feature on Lucent Technologies Microelectronics Group board-mounted power modules BMPMs allows the user to switch the module on
|
Original
|
AP97-038EPS
AP94-019EPS)
jc100a1
FC150A
MW010a
JC100A
remote control 555
MC005A
FE200
MH010
MC-010A
fw300a1
|
PDF
|
EH11
Abstract: WM8720 PWDN
Text: w WAN0126 WM8706/20/28 Power on Reset Activity and Waking from Power Down Mode INTRODUCTION The WM8706/20/28 includes an internal Power On Reset POR circuit to ensure the device powers up in a default state. This application note describes the behaviour of the POR circuit on power up
|
Original
|
WAN0126
WM8706/20/28
EH11
WM8720
PWDN
|
PDF
|
IT8671
Abstract: IT8761F 1488 1489 IT8761 of 1488 7407 application note IT867 99007
Text: Integrated Technology Express, Inc. Application Note of IT8761F for Power On Strapping Circuit July 1, 1999 Ø Power on strapping circuit needs extra attention when a “0” setting is selected Description: Due to IT8761 Rev. B power on strapping pins selection, a “0”
|
Original
|
IT8761F
IT8761
IT8671
IT8761
ITTM-AN-99007,
1488 1489
of 1488
7407 application note
IT867
99007
|
PDF
|
DIL-16
Abstract: SOIC-16 UCC2918 UCC3918
Text: UCC2918 UCC3918 Low On Resistance Hot Swap Power Manager FEATURES DESCRIPTION • Integrated 0.06Ω Power MOSFET The UCC3918 Low on Resistance Hot Swap Power Manager provides complete power management, hot swap capability, and circuit breaker functions. The only
|
Original
|
UCC2918
UCC3918
UCC3918
DIL-16
SOIC-16
UCC2918
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UCC2918 UCC3918 Low On Resistance Hot Swap Power Manager FEATURES DESCRIPTION • Integrated 0.06Ω Power MOSFET The UCC3918 Low on Resistance Hot Swap Power Manager provides complete power management, hot swap capability, and circuit breaker functions. The only
|
Original
|
UCC2918
UCC3918
UCC3918
|
PDF
|
fet_11124.0
Abstract: No abstract text available
Text: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Schematic no. fet_11124.0 Micro-power Precision Normally-ON Power Switch Description This micro-power precision Normally-ON power switch is controlled by VIN. When VIN is at GND, the MOSFET ALD1149xx is in an ON-State, which generates a low impedance path across its VDS, D and S terminals (RDS
|
Original
|
ALD1149xx)
ALD1149xx
ALD1149xx.
fet_11124.0
|
PDF
|
PMOS
Abstract: pMOS transistor ZXM61P03FTA
Text: CIRCUIT IDEAS FOR DESIGNERS Category: MOSFET Schematic no. fet_11124.0 Micro-power Precision Normally-ON Power Switch Description This micro-power precision Normally-ON power switch is controlled by VIN. When VIN is at GND, the MOSFET ALD1149xx is in an ON-State, which generates a low impedance path across its VDS, D and S terminals (RDS
|
Original
|
ALD1149xx)
ALD1149xx.
ALD1149xx;
ZXM61P03FTA.
ALD1109xx
PMOS
pMOS transistor
ZXM61P03FTA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Cell-Based IC Power On Reset User Notes Overview This Engineering Application Note EAN describes the use and testing of the Atmel library cell Power On Reset (POR). Circuit Reset Signals A pre-requisite for the use of the Power On Reset (POR) cell in a circuit is that
|
Original
|
900ns)
1900ns
|
PDF
|
carlo gavazzi SP 115 230
Abstract: spd2430
Text: Switching Power Supply Type SPD 300W DIN rail mounting • Installation on DIN Rail 7.5 or 15mm • Short circuit protection • Passive PFC • Power ready relay output on 24VDC • LED indicator for DC power ON • LED indicator for DC low • Parallel function by switch
|
Original
|
24VDC
10-24AWG
008Nm
616Nm
784Nm
carlo gavazzi SP 115 230
spd2430
|
PDF
|
FX020
Abstract: TYCO FW300A1 FC150A fw300 jc100a1 transistor crossreference AP97-038EPS FE200 tyco FE200 MW010A1
Text: Application Note September 1997 Design Guidelines for Power Module Remote On/Off Circuits Introduction Isolated-Closure Remote On/Off The remote on/off feature on the board-mounted power modules BMPMs allows the user to switch the module on and off electronically. This feature provides greater flexibility in the start-up sequencing and
|
Original
|
AP97-038EPS
AP94-019EPS)
FX020
TYCO FW300A1
FC150A
fw300
jc100a1
transistor crossreference
AP97-038EPS
FE200 tyco
FE200
MW010A1
|
PDF
|
2N5195
Abstract: No abstract text available
Text: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP
|
Original
|
2N5191,
2N5192
2N5194
2N5195*
2N5193
2N5195
|
PDF
|
2N5194
Abstract: 2N5195 2N5191 2N5192 2N5193
Text: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP
|
Original
|
2N5194
2N5195*
2N5191,
2N5192
r14525
2N5194/D
2N5194
2N5195
2N5191
2N5192
2N5193
|
PDF
|
sot23-5 Marking mosfet
Abstract: SOT23-5 MARKING m5 d28c top marking c1 sot23-5
Text: LP3470 LP3470 Tiny Power On Reset Circuit Literature Number: SNVS003E LP3470 Tiny Power On Reset Circuit General Description Key Specifications The LP3470 is a micropower CMOS voltage supervisory circuit designed to monitor power supplies in microprocessor
|
Original
|
LP3470
LP3470
SNVS003E
sot23-5 Marking mosfet
SOT23-5 MARKING m5
d28c
top marking c1 sot23-5
|
PDF
|
|
|
MJE5190
Abstract: 2N5191 TO-225AA to225a 2N5190 2N5192 2N5194 2N5195
Text: ON Semiconductor 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN
|
Original
|
2N5191
2N5192
2N5194,
2N5195.
r14525
2N5191/D
MJE5190
2N5191
TO-225AA
to225a
2N5190
2N5192
2N5194
2N5195
|
PDF
|
UDG-99153
Abstract: DIL-16 SOIC-16 UCC2918 UCC3918
Text: UCC2918 UCC3918 application INFO available Low On Resistance Hot Swap Power Manager FEATURES DESCRIPTION • Integrated 0.06Ω Power MOSFET The UCC3918 Low on Resistance Hot Swap Power Manager provides complete power management, hot swap capability, and circuit breaker functions. The only
|
Original
|
UCC2918
UCC3918
UCC3918
UDG-99153
DIL-16
SOIC-16
UCC2918
|
PDF
|
MJE5190
Abstract: 2N5191 2N5190 2N5190..92 2N5192 2N5194 2N5195
Text: ON Semiconductort 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN
|
Original
|
2N5191
2N5192
2N5194,
2N5195.
r14525
2N5191/D
MJE5190
2N5191
2N5190
2N5190..92
2N5192
2N5194
2N5195
|
PDF
|
GAAS FET AMPLIFIER x-band 10w
Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
|
Original
|
03-Aug-07
P1006-BD
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-EV1
XP1006
GAAS FET AMPLIFIER x-band 10w
XP1006-BD
XP1006-BD-EV1
P1006BD
MMIC X-band amplifier
P1006
DM6030HK
TS3332LD
XP1006-BD-000V
|
PDF
|
P1006
Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
|
Original
|
01-Nov-06
P1006
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-000W
XP1006-BD-EV1
GAAS FET AMPLIFIER x-band 10w
XP1006 bonding
XP1006-BD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
|
Original
|
01-Nov-06
P1006
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-000W
XP1006-BD-EV1
XP1006
|
PDF
|
P1006BD
Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
|
Original
|
11-Nov-08
P1006-BD
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-EV1
P1006BD
XP1006-BD
GAAS FET AMPLIFIER x-band 10w
Mimix Asia
|
PDF
|
tanaka gold wire
Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
|
Original
|
13-Mar-06
P1006
MIL-STD-883
XP1006
tanaka gold wire
MMIC X-band amplifier
P1006
DM6030HK
TS3332LD
XP1006
XP1006 bonding
X-band GaAs pHEMT MMIC Chip
|
PDF
|
2N5191
Abstract: 2N5192 2N5193 2N5194 2N5195 T2500S
Text: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 w *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP
|
Original
|
2N5194
2N5195*
2N5191,
2N5192
2N5194/D
2N5191
2N5192
2N5193
2N5194
2N5195
T2500S
|
PDF
|
2N6277
Abstract: 2N6275 1N3879 2N6274 2N6377 2N6277 applications
Text: ON Semiconductort 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device 50 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS
|
Original
|
2N6274
2N6275
2N6277
204AE
r14525
2N6274/D
2N6277
2N6275
1N3879
2N6274
2N6377
2N6277 applications
|
PDF
|
