Untitled
Abstract: No abstract text available
Text: AH102A The Communications Edge TM Medium Power, High Linearity Amplifier Product Description Functional Diagram The AH102A is a medium power gain block that offers excellent dynamic range in a low-cost surface mount package. The combination of a single supply voltage and
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AH102A
OT-89
AH102A
1-800-WJ1-4401
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102ag
Abstract: No abstract text available
Text: AH102A The Communications Edge TM Medium Power, High Linearity Amplifier Product Description Functional Diagram The AH102A is a medium power gain block that offers excellent dynamic range in a low-cost surface mount package. The combination of a single supply voltage and
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AH102A
OT-89
AH102A
1-800-WJ1-4401
102ag
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102ag
Abstract: Amplifier SOT-89 c4 AH102A-G MMIC SOT 89 marking CODE AH102A AH102A-PCB2000 AH102A-PCB900 JESD22-A114 1117 sot 89 1117 2256 regulator
Text: AH102A The Communications Edge TM Medium Power, High Linearity Amplifier Product Description Functional Diagram The AH102A is a medium power gain block that offers excellent dynamic range in a low-cost surface mount package. The combination of a single supply voltage and
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AH102A
AH102A
OT-89
1-800-WJ1-4401
102ag
Amplifier SOT-89 c4
AH102A-G
MMIC SOT 89 marking CODE
AH102A-PCB2000
AH102A-PCB900
JESD22-A114
1117 sot 89
1117 2256 regulator
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AH102
Abstract: rf power amplifier design with s-parameters MHz
Text: AH102 The Communications Edge Product Information Medium Power, High Linearity Amplifier Product Description The AH102 is a medium power gain block that offers excellent dynamic range in a low cost surface mount package. The combination of a single supply voltage and an internally matched
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AH102
AH102
1-800-WJ1-4401
rf power amplifier design with s-parameters MHz
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AH201
Abstract: 68 4401 JESD22-A114 J-STD-020A LLQ1608 amp 9435 marking code 9435 TOKO 707 WJ AH201 amplifier
Text: AH201 The Communications Edge TM Medium Power, High Linearity Amplifier Product Features • +30 dBm P1dB • +47 dBm Output IP3 • 17 dB Gain @ 900 MHz • MTBF >100 Years • Single Positive Supply • Internally Matched • 24dBm IS-95 Channel Power @ -45dBc ACPR
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AH201
24dBm
IS-95
-45dBc
AH201
1-800-WJ1-4401
68 4401
JESD22-A114
J-STD-020A
LLQ1608
amp 9435
marking code 9435
TOKO 707
WJ AH201 amplifier
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AP502
Abstract: AP502-PCB JESD22-A114 Class AB AMPLIFIER 4W AP-502 r7730
Text: AP502 The Communications Edge TM UMTS-band 4W HBT Amplifier Module Product Features Product Description • 2110 – 2170 MHz • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA linear power • +12 V Single Supply • Power Down Mode • Bias Current Adjustable
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AP502
AP502
JESD22-A114
JESD22-C101
1-800-WJ1-4401
AP502-PCB
JESD22-A114
Class AB AMPLIFIER 4W
AP-502
r7730
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R7730
Abstract: No abstract text available
Text: AP502 UMTS-band 4W HBT Amplifier Module Product Features Product Description • 2110 – 2170 MHz • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA linear power • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg
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AP502
AP502
JESD22-A114
JESD22-C101
1-800-WJ1-4401
R7730
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Untitled
Abstract: No abstract text available
Text: AP622 UMTS-band 4W HBT Amplifier Module Product Features • 2.11 – 2.17 GHz • 28 dB Gain • -55 dBc ACLR @ +23 dBm Pavg • +35 dBm P1dB • +28 V Supply • Power Down Mode • RoHS-compliant flange-mount pkg Applications • WCDMA Power Amplifiers
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AP622
AP622
35dBm,
55dBc
1-800-WJ1-4401
AP501
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Untitled
Abstract: No abstract text available
Text: AP502 UMTS-band 4W HBT Amplifier Module Product Features Product Description • 2110 – 2170 MHz • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA linear power • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg
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AP502
AP502
JESD22-A114
JESD22-C101
1-800-WJ1-4401
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Resistor mttf
Abstract: AP512 AP512-PCB JESD22-A114 UMTS-band power module POWER MODULE TM 39 wj model marking code
Text: AP512 The Communications Edge TM UMTS-band 8W HBT Amplifier Module Product Features • 2110 – 2170 MHz • 28.5 dB Gain • -55 dBc ACLR @ 28 dBm W-CDMA linear power • +39 dBm P1dB • +12 V Single Supply • Power Down Mode • Bias Current Adjustable
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AP512
AP512
JESD22-A114
JESD22-C101
1-800-WJ1-4401
Resistor mttf
AP512-PCB
JESD22-A114
UMTS-band power module
POWER MODULE TM 39
wj model marking code
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transistor c 5083
Abstract: WJ-A25 transistor bc 144 WJ-CA25-1 WJ-A25-1 Transistor BC 457 bc 457 Transistor WJA25
Text: UjJ A25-1 / SMA25-1 2 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: < 3.4 dB TYP. MEDIUM POWER OUT: +9.0 dBm (TYP.) LOW VSWR: < 1.7:1 VSWR (TYP.) WIDE POWER SUPPLY RANGE: +5 to +15 VOLTS Outline Drawings
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A25-1
SMA25-1
J1-4401
transistor c 5083
WJ-A25
transistor bc 144
WJ-CA25-1
WJ-A25-1
Transistor BC 457
bc 457 Transistor
WJA25
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Untitled
Abstract: No abstract text available
Text: AP622 UMTS-band 4W HBT Amplifier Module Product Features • 2.11 – 2.17 GHz • 28 dB Gain • -55 dBc ACLR @ +23 dBm Pavg • +35 dBm P1dB • +28 V Supply • Power Down Mode • RoHS-compliant flange-mount pkg Applications • WCDMA Power Amplifiers
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AP622
AP622
35dBm,
55dBc
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: u u U RA63-1 / SMRA63-1 2000 to 6000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 1.8-6.2 GHz TYR HIGH GAIN: 19.5 dB (TYR) HIGH OUTPUT POWER: +16.0 dBm (TYP.) LOW POWER SUPPLY VOLTAGE: +5 VDC Outline Drawings
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RA63-1
SMRA63-1
J1-4401
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AP622
Abstract: AP-622
Text: AP622 UMTS-band 4W HBT Amplifier Module Product Features • 2.11 – 2.17 GHz • 28 dB Gain • -55 dBc ACLR @ +23 dBm Pavg • +35 dBm P1dB • +28 V Supply • Power Down Mode • RoHS-compliant flange-mount pkg Applications • WCDMA Power Amplifiers
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AP622
AP622
35dBm,
55dBc
1-800-WJ1-4401
AP-622
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c 4468 power transistor
Abstract: TRANSISTOR BC 136 bc 440-6 transistor 4406 transistor WJ-CA17
Text: uuü A17/SMA17 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +15.3 dB TYP. HIGH THIRD ORDER I.P. +27 dBm (TYP.) LOW VSWR: <1.3:1 (TYP.) WIDE POWER SUPPLY RANGE: +5 T O +15 VOLTS Outline Drawings
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A17/SMA17
02tOU
1-800-WJ1-4401
c 4468 power transistor
TRANSISTOR BC 136
bc 440-6 transistor
4406 transistor
WJ-CA17
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Resistor mttf
Abstract: UMTS-band power module MTTF calculation 2110 - 2170mhz power module wj model marking code
Text: AP512 UMTS-band 8W HBT Amplifier Module Product Features • 2110 – 2170 MHz • 28.5 dB Gain • -55 dBc ACLR @ 28 dBm W-CDMA linear power • +39 dBm P1dB • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-complaint flange-mount pkg
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AP512
AP512
JESD22-A114
JESD22-C101
1-800-WJ1-4401
Resistor mttf
UMTS-band power module
MTTF calculation
2110 - 2170mhz power module
wj model marking code
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Untitled
Abstract: No abstract text available
Text: AH101 The Communications Edge Medium Power, High Linearity Amplifier Product Features • 50 - 1500 MHz • +45 dBm Output IP3 • 13 dB Gain • +27 dBm P1dB • MTTF >100 Years • Unconditionally Stable • Internally Matched • Single Bias Supply
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AH101
AH101
1-800-WJ1-4401
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lm 4580
Abstract: 4499 driver 4588
Text: ICA1008 2.0 to 10.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY: +5V ◆ BROADBAND PERFORMANCE ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ SELECTABLE BIAS OPTIONS ICA1008 Chip Outline
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ICA1008
ICA1008
1-800-WJ1-4401
lm 4580
4499 driver
4588
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Untitled
Abstract: No abstract text available
Text: ICA1004 0.75 to 3.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ IDEAL FOR CELLULAR AND PCS APPLICATIONS SINGLE POWER SUPPLY +5 V ON-CHIP BIAS NETWORK EXCELLENT FLATNESS OVER TEMP 100% ON-WAFER RF-TESTED ICA1004 Chip Outline Guaranteed Specifications* Characteristics
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ICA1004
ICA1004
J1-4401
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ICA1004
Abstract: No abstract text available
Text: ICA1004 0.75 to 3.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR CELLULAR AND PCS APPLICATIONS ◆ SINGLE POWER SUPPLY +5 V ◆ ON-CHIP BIAS NETWORK ◆ EXCELLENT FLATNESS OVER TEMP. ◆ 100% ON-WAFER RF-TESTED ICA1004 Chip Outline Guaranteed Specifications* Minimum
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ICA1004
ICA1004
1-800-WJ1-4401
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lm 3254
Abstract: No abstract text available
Text: ICA1009 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY: +5V ◆ BROADBAND PERFORMANCE ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ SELECTABLE BIAS OPTIONS ICA1009 Chip Outline
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ICA1009
ICA1009
1-800-WJ1-4401
lm 3254
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10459
Abstract: No abstract text available
Text: ICA1001 4.5 to 6.5 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER AMP AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY +5 V ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ MULTIPLE ON-CHIP BIAS OPTIONS ICA1001 Chip Outline Guaranteed Specifications*
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ICA1001
ICA1001
on-waf26
1-800-WJ1-4401
10459
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Untitled
Abstract: No abstract text available
Text: ICL1002A 3/7/00 1:56 PM Page 1 ICL1002A The Communications Edge GaAs MMIC Amplifier Product Features • 1.0 to 12.0 GHz Bandwidth • Excellent Even Order Harmonic • • • Suppression Single Bias Supply 100% On-wafer DC Tested Low Power Consumption
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ICL1002A
ICA1002A
ParameL1002A
1-800-WJ1-4401
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AMPLIFIER 1800w
Abstract: U 6204 lm 4580 4499 driver WJ-ICA1008
Text: uuJ ICA1008 2.0 to 10.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS ICA1008 Chip Outline
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ICA1008
ICA1008
AMPLIFIER 1800w
U 6204
lm 4580
4499 driver
WJ-ICA1008
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