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    POWER TRANSISTOR 901T Search Results

    POWER TRANSISTOR 901T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    High voltage ignition coil driver

    Abstract: Part Marking TO-220 STMicroelectronics power transistor 901t transistor marking MH ST901T Marking STMicroelectronics to220 901T electronic ignition ignition coil npn power darlington
    Text: ST901T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER TRANSISTOR n n n n HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE Figure 1: Package VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATION JUNCTION TEMPERATURE HIGH DC CURRENT GAIN 3 1 APPLICATIONS n 2 TO-220 HIGH RUGGEDNESS ELECTRONIC


    Original     		PDF ST901T O-220 ST901T O-220 High voltage ignition coil driver Part Marking TO-220 STMicroelectronics power transistor 901t transistor marking MH Marking STMicroelectronics to220 901T electronic ignition ignition coil npn power darlington