Untitled
Abstract: No abstract text available
Text: STL33N60M2 N-channel 600 V, 0.115 Ω typ., 21.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - preliminary data Features 6 6 6 %RWWRPYLHZ Order code VDS @ TJmax RDS on max ID STL33N60M2 650 V 0.135 Ω 21.5 A
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STL33N60M2
DocID024325
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STL23N85K5
Abstract: 23N85K5 schematic diagram of energy saving device
Text: STL23N85K5 N-channel 850 V, 0.23 Ω, 18 A PowerFLAT 8x8 HV Zener-protected SuperMESH 5™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID PW STL23N85K5 850 V < 0.275 Ω 18(1) 210 3 3 3 ' 1. The value is rated according to Rthj-c.
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STL23N85K5
STL23N85K5
23N85K5
schematic diagram of energy saving device
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Untitled
Abstract: No abstract text available
Text: STL23N85K5 N-channel 850 V, 0.2 Ω typ., 12.5 A Zener-protected SuperMESH 5 Power MOSFET in PowerFLAT™ 8x8 HV Datasheet — preliminary data Features Order code VDSS RDS on max ID PW STL23N85K5 850 V < 0.275 Ω 12.5 190 3 3 3 "OTTOM VIEW ' •
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STL23N85K5
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23NM60N
Abstract: hv 102 st
Text: STL23NM60ND N-channel 600 V, 0.175 Ω typ., 19.5 A, FDmesh II Power MOSFET with fast diode in PowerFLAT™ 8x8 HV package Datasheet − production data Features 3 3 3 "OTTOM VIEW ' Order code VDS @ TJmax RDS(on) max ID STL23NM60ND 650 V 0.199 Ω
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STL23NM60ND
DocID17439
23NM60N
hv 102 st
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stl18n55m5
Abstract: No abstract text available
Text: STL18N55M5 N-channel 550 V, 0.205 Ω, 13 A PowerFLAT 8x8 HV MDmesh™ V Power MOSFET Features Type VDSS @ TJmax RDS on max ID STL18N55M5 600 V < 0.270 Ω 13 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case • 100% avalanche tested
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STL18N55M5
STL18N55M5
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23NM50N
Abstract: No abstract text available
Text: STL23NM50N N-channel 500 V, 0.170 Ω, 14 A PowerFLAT 8x8 HV MDmesh™ II Power MOSFET Preliminary data Features Type VDSS @ TJmax RDS on max ID STL23NM50N 550 V < 0.210 Ω 14 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case
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STL23NM50N
STL23NM50N
23NM50N
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Untitled
Abstract: No abstract text available
Text: STL21N65M5 N-channel 650 V, 0.175 Ω, 17 A ultra low gate charge MDmesh V Power MOSFET in PowerFLAT™ 8x8 HV package Datasheet — production data Features Order code VDSS @ TJmax RDS on max ID STL21N65M5 710 V < 0.190 Ω 17 A (1) 3 3 3 "OTTOM VIEW
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STL21N65M5
STL21N65M5
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Untitled
Abstract: No abstract text available
Text: STL24N60M2 N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet − production data Features 6 6 6 %RWWRPYLHZ Order code VDS @ TJmax RDS on max ID STL24N60M2 650 V 0.21 Ω 18 A *
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STL24N60M2
DocID024777
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Untitled
Abstract: No abstract text available
Text: STL38N65M5 N-channel 650 V, 0.090 Ω typ., 22.5 A MDmesh V Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet — preliminary data Features Order code VDS @ TJmax RDS on max ID STL38N65M5 710 V 0.105 Ω 22.5 A(1) 6 6 6 %RWWRPĆYLHZ * '
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STL38N65M5
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Untitled
Abstract: No abstract text available
Text: STL21N65M5 N-channel 650 V, 0.175 Ω, 17 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ V Power MOSFET Features Type VDSS @ TJmax RDS(on) max ID STL21N65M5 710 V < 0.190 Ω 17 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case
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STL21N65M5
STL21N65M5
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13nm60n
Abstract: 1,3nm60n 13NM60 13nm60n equivalent
Text: STL13NM60N N-channel 600 V, 0.320 Ω, 10 A PowerFLAT 8x8 HV MDmesh™ II Power MOSFET Features Order code VDSS @ TJmax RDS(on) max ID STL13NM60N 650 V < 0.385 Ω 10 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case •
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STL13NM60N
STL13NM60N
13nm60n
1,3nm60n
13NM60
13nm60n equivalent
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hv 102 st
Abstract: 18nm60 STL18NM60N
Text: STL18NM60N N-channel 600 V, 0.260 Ω, 6 A PowerFLAT 8x8 HV MDmesh™ II Power MOSFET Features Order code VDSS @ TJmax RDS on max ID STL18NM60N 650 V < 0.310 Ω 12 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case • 100% avalanche tested
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STL18NM60N
STL18NM60N
hv 102 st
18nm60
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STL42N65M5
Abstract: 42N65M5
Text: STL42N65M5 N-channel 650 V, 0.070 Ω, 34 A MDmesh V Power MOSFET in PowerFLAT™ 8x8 HV Preliminary data Features Type VDSS @ TJmax RDS(on) max ID STL42N65M5 710 V < 0.079 Ω 34 A(1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case
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STL42N65M5
STL42N65M5
42N65M5
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24N60M2
Abstract: No abstract text available
Text: STL24N60M2 N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet − production data Features 6 6 6 %RWWRPĆYLHZ Order code VDS @ TJmax RDS on max ID STL24N60M2 650 V 0.21 Ω 18 A *
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STL24N60M2
DocID024777
24N60M2
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STL13NM60N
Abstract: No abstract text available
Text: STL13NM60N N-channel 600 V, 0.320 Ω typ., 10 A MDmesh II Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features 3 6 6 Order code VDS @ Tjmax RDS on max. ID STL13NM60N 650 V 0.385 Ω 10 A %RWWRPYLHZ * • 100% avalanche tested
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STL13NM60N
DocID018870
STL13NM60N
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16N65
Abstract: STL16N65M5
Text: STL16N65M5 N-channel 650 V, 0.240 Ω, 12 A PowerFLAT 8x8 HV MDmesh™ V power MOSFET Preliminary data Features Type VDSS @ TJmax RDS(on) max ID STL16N65M5 710 V < 0.279 Ω 12 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case
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STL16N65M5
16N65
STL16N65M5
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stl21
Abstract: STL21N65M5 schematic diagram of energy saving device
Text: STL21N65M5 N-channel 650 V, 0.170 Ω, 17 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ V power MOSFET Features Type VDSS @ TJmax RDS(on) max ID STL21N65M5 710 V < 0.190 Ω 17 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case
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STL21N65M5
stl21
STL21N65M5
schematic diagram of energy saving device
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18nm60
Abstract: transistor 18nm60n circuit diagram application
Text: STL18NM60N N-channel 600 V, 0.260 Ω, 6 A PowerFLAT 8x8 HV MDmesh™ II Power MOSFET Features Order code VDSS @ TJmax RDS(on) max ID STL18NM60N 650 V < 0.310 Ω 12 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case •
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STL18NM60N
STL18NM60N
18nm60
transistor 18nm60n circuit diagram application
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Untitled
Abstract: No abstract text available
Text: STL36N55M5 N-channel 550 V, 0.066 Ω, 31 A MDmesh V Power MOSFET in PowerFLAT™ 8x8 HV Target specification Features Order code VDSS @ TJmax RDS on max ID STL36N55M5 600 V < 0.090 Ω 31 A(1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case
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STL36N55M5
STL36N55M5
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hv 102 st
Abstract: 26NM60N
Text: STL26NM60N N-channel 600 V, 0.160 Ω, 19 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET Features Order code VDSS @ TJmax RDS on max ID STL26NM60N 650 V < 0.185 Ω 19 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case
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STL26NM60N
STL26NM60N
hv 102 st
26NM60N
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STL24NM60N
Abstract: No abstract text available
Text: STL24NM60N N-channel 600 V, 0.200 Ω, 16 A PowerFLAT 8x8 HV MDmesh™ II Power MOSFET Features Type VDSS @ TJmax RDS on max ID STL24NM60N 650 V < 0.215 Ω 16 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case • 100% avalanche tested
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STL24NM60N
STL24NM60N
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stl22
Abstract: No abstract text available
Text: STL22N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh V Power MOSFET in PowerFLAT™ 8x8 HV package Datasheet — preliminary data Features Order code VDSS @ TJmax RDS on max ID STL22N65M5 710 V < 0.220 Ω 15 A(1) 3 3 3 ' $ 1. The value is rated according to Rthj-case and limited by
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STL22N65M5
STL22N65M5
stl22
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12N65
Abstract: STL12N65M5 12N65M5 8534A
Text: STL12N65M5 N-channel 650 V, 0.390 Ω, 8.5 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ V Power MOSFET Preliminary data Features Type VDSS @ TJmax RDS(on) max ID STL12N65M5 710 V < 0.430 Ω 8.5 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case
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STL12N65M5
12N65
STL12N65M5
12N65M5
8534A
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Untitled
Abstract: No abstract text available
Text: STL31N65M5 N-channel 650 V, 0.135 Ω typ., 15 A MDmesh V Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features 3 3 3 Order code VDS RDS on max ID STL31N65M5 710 V 0.162 Ω 15 A(1) "OTTOM VIEW ' 1. The value is rated according to Rthj-case and limited by
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STL31N65M5
DocID025459
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