Untitled
Abstract: No abstract text available
Text: IRFH8334PbF-1 VDS VGS max RDS on max 30 V ± 20 V 9.0 (@VGS = 10V) (@VGS = 4.5V) 13.5 Qg typ. 7.1 ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters Features Industry-standard pinout PQFN 5 x 6mm Package
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IRFH8334PbF-1
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PQFN
Abstract: PQFN footprint AN2467 DUAL ROW QFN leadframe MC33982PNA MC33982FC ADHESIVE GAP PAD PQFN 5 leads PQFN package power freescale JESD51-5
Text: Freescale Semiconductor, Inc. Application Note AN2467/D Revision 1.0 09/2004 Topic Page Freescale Semiconductor, Inc. 1.0 Purpose . 1 2.0 Scope. 1 3.0 Power Quad Flat No-Lead PQFN
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AN2467/D
AN2467/D
PQFN
PQFN footprint
AN2467
DUAL ROW QFN leadframe
MC33982PNA
MC33982FC
ADHESIVE GAP PAD
PQFN 5 leads
PQFN package power freescale
JESD51-5
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PDF
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JESD22-B113
Abstract: qfn Substrate design guidelines JESD22B113 JESD22-B111 JESD22B111 AN-1137 AN1136 JEDEC qfn tape JEDEC QFN case outline
Text: Application Note AN-1136 Discrete Power Quad Flat Pack No-Leads PQFN Board Mounting Application Note Table of Contents Page Device construction . 2 Design considerations . 3 Assembly considerations . 4
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AN-1136
IRFH7932TRPbF)
JESD22-B113
qfn Substrate design guidelines
JESD22B113
JESD22-B111
JESD22B111
AN-1137
AN1136
JEDEC qfn tape
JEDEC QFN case outline
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PDF
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S2083
Abstract: M513 s2083 application
Text: MAAD-008789-000100 Digital Attenuator 32.0 dB, 2-Bit, TTL Driver, DC-4.0 GHz Rev. V1 Functional Schematic Features • • • • • • • Attenuation: Two 16 dB bits Low DC Power Consumption Small Footprint, PQFN Package Integral TTL Driver 50 ohm Impedance
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MAAD-008789-000100
MAAD-008789-000100
S2083
M513
s2083 application
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PDF
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PQFN
Abstract: DUAL ROW QFN leadframe PQFN footprint "exposed pad" PCB via JESD51-5 AN2467 PQFN package power freescale PQFN 8 leads
Text: Freescale Semiconductor Application Note AN2467 Rev. 4.0, 4/2007 Power Quad Flat No-Lead PQFN Package 1 Purpose This document provides guidelines for Printed Circuit Board (PCB) design and assembly. Package performance attributes such as Moisture Sensitivity
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AN2467
PQFN
DUAL ROW QFN leadframe
PQFN footprint
"exposed pad" PCB via
JESD51-5
AN2467
PQFN package power freescale
PQFN 8 leads
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PDF
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Untitled
Abstract: No abstract text available
Text: VND5E004A-E VND5E004ASP30-E Double 4mΩ high-side driver with analog current sense for automotive applications Datasheet - production data PQFN - 12x12 Power lead-less – Overtemperature shutdown with auto restart thermal shutdown – Inrush current active management by
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VND5E004A-E
VND5E004ASP30-E
12x12
MultiPowerSO-30
DocID17359
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PDF
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M513
Abstract: S2083
Text: MAAD-008791-000100 Digital Attenuator 31.5 dB, 6-Bit, TTL Driver, DC-3.0 GHz Functional Schematic Features • • • • • • • Rev. V1 Attenuation: 0.5 dB Steps to 31.5 dB Low DC Power Consumption Small Footprint, PQFN Package Integral TTL Driver 50 ohm Impedance
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MAAD-008791-000100
MAAD-008791-000100
M513
S2083
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PDF
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PQFN footprint
Abstract: AM50-0012 AM50-0012SMB AM50-0012TR AM50-0012TR-3000 M513
Text: High Dynamic Range LNA 1700 - 2400 MHz AM50-0012 V2 Features • • • • • Functional Block Diagram Ideal for Base Station Applications High Gain: 19 dB @ 2000 MHz Low Noise Figure: 1.4 dB High Input IP3: +13 dBm Small Footprint 3 mm 12 Lead PQFN Package
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AM50-0012
AM50-0012
12-lead
PQFN footprint
AM50-0012SMB
AM50-0012TR
AM50-0012TR-3000
M513
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Untitled
Abstract: No abstract text available
Text: VND5004B-E VND5004BSP30-E Double 4mΩ high-side driver with analog current sense for automotive applications Datasheet - production data PQFN 12x12 Power lead-less MultiPowerSO-30 Features Parameters Symbol Value Max transient supply voltage VCC 41 V Operating voltage range
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VND5004B-E
VND5004BSP30-E
12x12
MultiPowerSO-30
DocID15702
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PDF
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IRFHM831TRPBF
Abstract: No abstract text available
Text: IRFHM831PbF HEXFET Power MOSFET VDS 30 V RDS on max 7.8 m Qg (typical) RG (typical) 7.3 0.5 nC ID 40h A (@VGS = 10V) (@Tc(Bottom) = 25°C) : : PQFN 3.3mm x 3.3mm Applications • Control MOSFET for Buck Converters Features and Benefits Benefits Features
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IRFHM831PbF
IRFHM831TRPBF
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IRFH5110
Abstract: max9337
Text: PD -96294A IRFH5110PbF HEXFET Power MOSFET VDS 100 V RDS on max 12.4 mΩ Qg (typical) 54 nC RG (typical) 1.5 Ω 63 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors
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-96294A
IRFH5110PbF
136mH,
IRFH5110
max9337
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Untitled
Abstract: No abstract text available
Text: FastIRFET IRFH4213DPbF HEXFET Power MOSFET VDSS RDS on max (@ VGS = 10V) (@ VGS = 4.5V) 25 V 1.35 m 1.90 Qg (typical) 25 nC ID (@TC (Bottom) = 25°C) 100 A PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters
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IRFH4213DPbF
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Untitled
Abstract: No abstract text available
Text: IRFH5255PbF HEXFET Power MOSFET VDS 25 V RDS on max 6.0 mΩ Qg (typical) RG (typical) 7.0 0.6 nC ID 51 A (@VGS = 10V) (@Tc(Bottom) = 25°C) Ω PQFN 5X6 mm Applications • Control MOSFET for high Frequency Buck Converters Features and Benefits Benefits
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IRFH5255PbF
IRFH5255TRPbF
IRFH5255TR2PbF
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IRFH5206
Abstract: max8750 IRFH5206TR2PBF AN-1154 IRFH5206TRPBF
Text: PD -97466 IRFH5206PbF HEXFET Power MOSFET VDS 60 V RDS on max 6.7 m 40 1.7 nC 89 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) : : PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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IRFH5206PbF
IRFH5206
max8750
IRFH5206TR2PBF
AN-1154
IRFH5206TRPBF
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Untitled
Abstract: No abstract text available
Text: PD -97615 IRFH5220PbF HEXFET Power MOSFET VDS 200 V RDS on max 99.9 mΩ 20 2.3 nC Ω 20 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors
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IRFH5220PbF
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PQFN footprint
Abstract: diode marking 33a on semiconductor IRFH5210TR2PBF marking 33a on semiconductor AN-1154 IRFH5210TRPBF IRFH5210
Text: PD - 97490 IRFH5210PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 100 V 14.9 mΩ Qg (typical) RG (typical) 39 nC 1.8 Ω ID 55 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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IRFH5210PbF
IRFH5210TRPBF
IRFH5210TR2PBF
PQFN footprint
diode marking 33a on semiconductor
IRFH5210TR2PBF
marking 33a on semiconductor
AN-1154
IRFH5210TRPBF
IRFH5210
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IRFH5106PbF
Abstract: AN-1154 IRFH5106
Text: PD -95959 IRFH5106PbF HEXFET Power MOSFET VDS 60 V 5.6 mΩ nC RG typical 50 1.4 ID 100 A RDS(on) max (@VGS = 10V) Qg (typical) (@Tc(Bottom) = 25°C) Ω PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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IRFH5106PbF
IRFH5106TRPBF
IRFH5106TR2PBF
077mH,
IRFH5106PbF
AN-1154
IRFH5106
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AC Transformer 50A 100V
Abstract: No abstract text available
Text: IRLH7134PbF HEXFET Power MOSFET VDS 40 V RDS on max 3.3 mΩ 39 nC (@VGS = 10V) Qg (typical) ID 50 (@Tc(Bottom) = 25°C) i A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications
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IRLH7134PbF
IRLH7134TRPBF
IRLH7134TR2PBF
AC Transformer 50A 100V
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Untitled
Abstract: No abstract text available
Text: PD - 97614A IRFH5215PbF HEXFET Power MOSFET VDS 150 V RDS on max 58 mΩ Qg (typical) 21 nC RG (typical) 2.3 Ω 27 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Primary Side Synchronous Rectification Inverters for DC Motors
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7614A
IRFH5215PbF
IRFH5215TRPBF
IRFH5215TR2PBF
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IRFH5010TRPBF
Abstract: mosfet 500V 50A IRFH5010TR
Text: PD-96297A IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS on max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors
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PD-96297A
IRFH5010PbF
181mH,
IRFH5010TRPBF
mosfet 500V 50A
IRFH5010TR
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IRFH5406TRPBF
Abstract: No abstract text available
Text: PD-96299A IRFH5406PbF HEXFET Power MOSFET VDS 60 V RDS on max 14.4 mΩ Qg (typical) 21 nC RG (typical) 1.1 Ω 40 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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PD-96299A
IRFH5406PbF
156mH,
IRFH5406TRPBF
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Untitled
Abstract: No abstract text available
Text: IRFH4210DPbF HEXFET Power MOSFET VDSS 25 V RDS on max (@ VGS = 10V) (@ VGS = 4.5V) 1.35 Qg (typical) 37.0 nC ID (@TC (Bottom) = 25°C) 100 A 1.10 m PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters
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IRFH4210DPbF
com/technical-info/appnotes/an-994
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IRFH5215
Abstract: irfh5215pbf
Text: PD - 97614A IRFH5215PbF HEXFET Power MOSFET VDS 150 V RDS on max 58 mΩ Qg (typical) 21 nC RG (typical) 2.3 Ω 27 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Primary Side Synchronous Rectification Inverters for DC Motors
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7614A
IRFH5215PbF
IRFH5215
irfh5215pbf
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TH 2190 mosfet
Abstract: TH 2190 AN-1154 IRFH5303TR2PBF IRFH5303TRPBF
Text: PD -97467 IRFH5303PbF HEXFET Power MOSFET VDS 30 V RDS on max 4.2 m 15 0.6 nC 82 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) : : PQFN 5X6 mm Applications • Control MOSFET for high frequency buck converters Features and Benefits Benefits
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IRFH5303PbF
IRFH5303TRPBF
IRFH5303TR2PBF
038mH,
TH 2190 mosfet
TH 2190
AN-1154
IRFH5303TR2PBF
IRFH5303TRPBF
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