KRA222S
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA222S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PR 1 2 Item Marking Description Device Mark PR KRA222S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KRA222S
OT-23
KRA222S
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CX28250-23
Abstract: CX28250-26 GR-253-CORE RS8250 cx8250
Text: Re vie w eli mi na ry CX28250 Differences between the RS8250-16 and the CX28250-23/-26 Pr Application Note 500386A July 2002 Revision History Date A — July 2002 Description Re vie w Level Created. Pr eli mi na ry Revision 2001, 2002, Mindspeed Technologies , a Conexant business
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CX28250
RS8250-16
CX28250-23/-26
00386A
CX28250-23
CX28250
RS8250
CX28250-26
GR-253-CORE
cx8250
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8322 Series
Abstract: nichicon pr LMT 2902 D NEC schottky diode product List S-8321 S-8321A S-8321AJMP-DNJ-T2 S-8321AOMP-DNO-T2 S-8321B S-8322
Text: DI SC ON TI NU E D PR OD Features . 1 Applications . 1 Block Diagram . 2 Selection Guide . 2
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S-80942ANMP-DD6-T2
Abstract: S-80945ANMP-DD9-T2 transistor sc 5586 80945ALMP-DA9 2060od transistor c 5586 dac 809 S-80935ALMP-DAZ-T2 S-80945ALMP-DA9-T2 ultra low voltage detector
Text: DI SC ON TI NU E D PR OD Features . 1 Applications . 1 Pin Assignment . 1 Block Diagram . 1
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S-808
S-80942ANMP-DD6-T2
S-80945ANMP-DD9-T2
transistor sc 5586
80945ALMP-DA9
2060od
transistor c 5586
dac 809
S-80935ALMP-DAZ-T2
S-80945ALMP-DA9-T2
ultra low voltage detector
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80846
Abstract: Edd 44 S-80811ANNP-E71-T2 s-80841anup seiko 320 240 S-808 S-80808ANNP-E7Y-T2 S-80809ANNP-E7Z-T2 S-80810ANNP-E70-T2 S-80812ANNP-E72-T2
Text: DI SC ON TI NU E D PR OD Features . 1 Applications . 1 Pin Assignment . 1 Block Diagram . 2
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Voltage Output Temperature Sensor
Abstract: S-8110AMP
Text: DI SC ON TI NU E D PR OD Features . 1 Block Diagram . 1 Pin Assignment . 1 Absolute Maximum Ratings . 2
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S-8120AMP
Abstract: No abstract text available
Text: DI SC ON TI NU E D PR OD Features . 1 Block Diagram . 1 Pin Assignment . 1 Absolute Maximum Ratings . 2
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Untitled
Abstract: No abstract text available
Text: FS8853-DS-24_EN Datasheet MAY 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 2.4 FS8853 Fo r FO 300 mA LDO Linear Regulator FS8853 Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8853-DS-24
FS8853
FS8853
OT-23
OT-89
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marking DW01
Abstract: DW01* MARKING dw01 sot-23-6
Text: DW01+-DS-26_EN Datasheet JUL 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 2.6 DW01+ Fo r FO One Cell Lithium-ion/Polymer Battery Protection IC DW01+ Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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-DS-26
/60ms
/100ms
marking DW01
DW01* MARKING
dw01 sot-23-6
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Untitled
Abstract: No abstract text available
Text: FS8205-DS-14_EN Datasheet AUG 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 1.4 FS8205 Fo r FO Dual N-Channel Enhancement Mode Power MOSFET FS8205 Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8205-DS-14
FS8205
700REF
Rds25
28mohm
36mohm
Rds45
22mohm
26mohm
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Untitled
Abstract: No abstract text available
Text: MMBR5179LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-1.4GHz EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package
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MMBR5179LT1
MMBR5179LT1
200MHz
OT-23
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MMBR911LT1
Abstract: MMBR911MLT1
Text: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package
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MMBR911MLT1
MMBR911MLT1
MMBR911LT1
MMBR911LT1
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Untitled
Abstract: No abstract text available
Text: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package
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MMBR911MLT1
MMBR911MLT1
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MMBR5179LT1
Abstract: No abstract text available
Text: MMBR5179LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package
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MMBR5179LT1
MMBR5179LT1
200MHz
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MRF9411MLT1
Abstract: No abstract text available
Text: MMBR941MLT1/MRF9411MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR941MLT1/MRF9411MLT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.3dB@1GHz ! Low cost SOT23/SOT143
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MMBR941MLT1/MRF9411MLT1
MMBR941MLT1/MRF9411MLT1
OT23/SOT143
MMBR941LMT1/MRF9411MLT1
MRF9411MLT1
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Untitled
Abstract: No abstract text available
Text: MMBR5179LT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. Low noise-4.5dB@200MHz Low cost SOT23 package
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MMBR5179LT1
MMBR5179LT1
200MHz
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C705A
Abstract: marking codes pd C705C CMPD7005 CMPD7005A CMPD7005C CMPD7005S marking code diode R1
Text: Y RCMPD7005 A IN IM EL Central CMPD7005A CMPD7005C CMPD7005S PR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD7005, CMPD7005A, CMPD7005C and CMPD7005S are silicon switching diodes with various diode configurations, manufactured by the epitaxial
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CMPD7005
CMPD7005A
CMPD7005C
CMPD7005S
CMPD7005,
CMPD7005A,
CMPD7005C
OT-23
C705A
marking codes pd
C705C
CMPD7005
CMPD7005A
CMPD7005S
marking code diode R1
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C706A
Abstract: marking code diode 14 C706S CMPD7006 CMPD7006A CMPD7006C CMPD7006S D232
Text: Y RCMPD7006 A IN IM EL Central CMPD7006A CMPD7006C CMPD7006S PR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD7006, CMPD7006A, CMPD7006C and CMPD7006S are silicon switching diodes with various diode configurations, manufactured by the epitaxial
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CMPD7006
CMPD7006A
CMPD7006C
CMPD7006S
CMPD7006,
CMPD7006A,
CMPD7006C
OT-23
C706A
marking code diode 14
C706S
CMPD7006
CMPD7006A
CMPD7006S
D232
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Untitled
Abstract: No abstract text available
Text: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com
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MMBR911LT1
MMBR911LT1
OT-23
MMBR911MLT1
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Untitled
Abstract: No abstract text available
Text: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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MMBR911LT1
MMBR911LT1
MMBR911MLT1
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Untitled
Abstract: No abstract text available
Text: BFR92ALT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-3.0dB@500MHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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BFR92ALT1
BFR92ALT1
500MHz
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TVS in SOT-23
Abstract: TVS SOT-23
Text: pr-LP05C . . . . . Engineered solutions for the transient environment SUBMINIATURE TVS SOT-23 APPLICATIONS USB Port Protection Cellular Phones Controller & Monitoring Systems Portable Electronics Wireless Bus Protection R Y ● ● ● ● ● IEC 61000-4 COMPATIBLE
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pr-LP05C
OT-23)
OT-23
LP05C
TVS in SOT-23
TVS SOT-23
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Untitled
Abstract: No abstract text available
Text: NLAS4624 Pr oduct Preview Low Voltage Single Supply SPDT Analog Switch The NLAS4624 is an advanced high speed CMOS single pole − double throw analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON
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NLAS4624
OT23-6/TSOP-6/SC59-6
NLAS4624
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 -A PR IL 1998_ FEATURES * BVdss = 100V * Low Threshold PARTMARKING D ETAIL - SAA ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V p s Drain-Gate Voltage
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BSS123A
170mA
280mA
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