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    PREDICTING OPERATING TEMPERATURE AND EXPECTED LIFETIME Search Results

    PREDICTING OPERATING TEMPERATURE AND EXPECTED LIFETIME Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    PREDICTING OPERATING TEMPERATURE AND EXPECTED LIFETIME Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Predicting-Operating-Temperature-and-Expected-Lifetime

    Abstract: Predicting Operating Temperature and Expected Lifetime PCIM 177 variable capacitor C4AK powersystems simulation model electrolytic capacitor capacitor variable dw-dc variable capacitors
    Text: Predicting Operating Temperature and Expected Lifetime of Aluminum-Electrolytic Bus Capacitors with Thermal Modeling Sam G. Parler, Jr. and Laird L. Macomber Cornell Dubilier 140 Technology Place Liberty, SC 29657 Abstract ! Large-can aluminum electrolytic capacitors are widely used as bus capacitors in variable-speed


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    Untitled

    Abstract: No abstract text available
    Text: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their


    Original     		PDF AN1012

    200B

    Abstract: 24C32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562 program eeprom 24c32
    Text: Using Endurance Predictive Software AN562 Using the Microchip Endurance Predictive Software INTRODUCTION TOTAL ENDURANCE PREDICTIVE SOFTWARE Endurance, as it applies to non-volatile memory, refers to the number of times an individual memory cell can be erased and/or written some architectures do not erase


    Original     		PDF AN562 24C32 24C65. 200B 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562 program eeprom 24c32

    K6X8008T2B-UF55

    Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety

    eeprom tutorial

    Abstract: program eeprom 24c32 24C32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562
    Text: AN562 Using the Microchip Endurance Predictive Software Authors: Peter Sorrells Memory Products Division Richard J. Fisher Memory Products Division David Wilkie Reliability Engineering INTRODUCTION Endurance, as it applies to nonvolatile EEPROM memory, refers to the number of times an individual


    Original     		PDF AN562 AN536 AN537 eeprom tutorial program eeprom 24c32 24C32 24C65 24LC04 24LC04B 24LC16B AN562

    program eeprom 24c32

    Abstract: eeprom tutorial 24C32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562
    Text: AN562 Using the Microchip Endurance Predictive Software Authors: Peter Sorrells Memory Products Division Richard J. Fisher Memory Products Division David Wilkie Reliability Engineering INTRODUCTION Endurance, as it applies to nonvolatile EEPROM memory, refers to the number of times an individual


    Original     		PDF AN562 AN536 AN537 program eeprom 24c32 eeprom tutorial 24C32 24C65 24LC04 24LC04B 24LC16B AN562

    samsung "failure rate" lcd

    Abstract: program eeprom 24c32 24C32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562
    Text: Using Endurance Predictive Software AN562 Using the Microchip Endurance Predictive Software INTRODUCTION TOTAL ENDURANCE PREDICTIVE SOFTWARE Endurance, as it applies to non-volatile memory, refers to the number of times an individual memory cell can be erased and/or written some architectures do not erase


    Original     		PDF AN562 24C32 24C65. D-81739 samsung "failure rate" lcd program eeprom 24c32 24C65 24LC04 24LC04B 24LC16B AN536 AN537 AN562

    Coffin-Manson Equation

    Abstract: No abstract text available
    Text: "Reliability and MTBF Overview" Prepared by Scott Speaks Vicor Reliability Engineering Introduction Reliability is defined as the probability that a device will perform its required function under stated conditions for a specific period of time. Predicting with some degree of


    Original     		PDF

    14270x

    Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02

    BR1632 safety

    Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 BR1632 safety BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012

    BR1632 safety

    Abstract: mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 BR1632 safety mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12

    br1632 br1225

    Abstract: No abstract text available
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 br1632 br1225

    Sanyo supercapacitors

    Abstract: ds1307 application notes DS3232 rtc ds1307 ds1307 rtc DS1307 IC APP3816 DS1307 coin cell pc battery holders DS1337
    Text: Maxim > App Notes > REAL-TIME CLOCKS May 26, 2006 Keywords: Battery, cell, super cap, supercap, rechargeable APPLICATION NOTE 3816 Selecting a Backup Source for Real-Time Clocks Abstract: Most Dallas Semiconductor real-time clocks RTCs include a supply input for a backup power source.


    Original     		PDF DS1685: DS17285: DS17485: DS17885: DS3231: DS3232: DS3234: DS32KHZ: AN3816, APP3816, Sanyo supercapacitors ds1307 application notes DS3232 rtc ds1307 ds1307 rtc DS1307 IC APP3816 DS1307 coin cell pc battery holders DS1337

    maxwell supercapacitor

    Abstract: boostcap ultracapacitor ultracapacitor vehicle Maxwell PROCESS
    Text: APPLICATION NOTE Maxwell Technologies BOOSTCAP® Energy Storage Modules Life Duration Estimation 2007 Maxwell Technologies Inc. ® 1012839 1. Goal The objective of this document is to explain the way to use the different physical measurements of an ultracapacitor module in order to extrapolate the vital parameters and to estimate the potential operating


    Original     		PDF

    "OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS"

    Abstract: william mcmurray optimum snubbers power semiconductors McMurray SELECTION OF SNUBBERS AND CLAMPS TO OPTIMIZE THE DESIGN OF TRANSISTOR SWITCHING CONVERTERS Ultrafast RECTIFIER DIODES national DIODE 10B3 fast recovery epitaxial diodes transistor Designing RC snubbers RECTIFIER DIODES NATIONAL FRP820
    Text: INTRODUCTION A key device in all high voltage AC-DC power supplies is the ultrafast reverse recovery rectifier diode These diodes D1 and D2 in Figure 1 not only play a major role in power supply efficiency but also can be major contributors to circuit electromagnetic interference (EMI) and even cause


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA3875 SBOS341 – DECEMBER 2006 Triple 2:1 High-Speed Video Multiplexer FEATURES • • • • • • • • DESCRIPTION 700MHz SMALL-SIGNAL BANDWIDTH AV = +2 425MHz, 4VPP BANDWIDTH 0.1dB GAIN FLATNESS to 150MHz


    Original     		PDF OPA3875 SBOS341 700MHz 425MHz, 150MHz 40mVPP OPA3875 SSOP-16 11mA/ch,

    LT1675-1

    Abstract: OPA3875 OPA692 OPA693 OPA875 OPA875ID OPA875IDGKT OPA875IDR
    Text: BurrĆBrown Products from Texas Instruments TIV 675 OPA875 SBOS340 – DECEMBER 2006 Single 2:1 High-Speed Video Multiplexer FEATURES • • • • • • • • DESCRIPTION 700MHz SMALL-SIGNAL BANDWIDTH AV = +2 425MHz, 4VPP BANDWIDTH 0.1dB GAIN FLATNESS to 200MHz


    Original     		PDF OPA875 SBOS340 700MHz 425MHz, 200MHz 40mVPP OPA875 425MHz LT1675-1 OPA3875 OPA692 OPA693 OPA875ID OPA875IDGKT OPA875IDR

    Untitled

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA3875 SBOS341B – DECEMBER 2006 – REVISED DECEMBER 2006 Triple 2:1 High-Speed Video Multiplexer FEATURES • • • • • • • • DESCRIPTION 700MHz SMALL-SIGNAL BANDWIDTH AV = +2 425MHz, 4VPP BANDWIDTH


    Original     		PDF OPA3875 SBOS341B 700MHz 425MHz, 150MHz 40mVPP OPA3875 SSOP-16 11mA/ch,

    RR502A

    Abstract: RR504 x2864 X2864A X2816A RR-504 predicting xicor X2816A
    Text: U ff !' VH I I I I iiJ r r* > 3* / y h \ 'i DETERMINING SYSTEM RELIABILITY FROM E2PROM ENDURANCE DATA By Richard Palm • D ata retention refers to the capability of a non­ volatile m emory device to retain valid data under worst case conditions. Xicor has published numerous reliability reports


    OCR Scan     		PDF X2816A X2864A. X2864A RR502A RR504 x2864 RR-504 predicting xicor X2816A

    MKI48Z18

    Abstract: No abstract text available
    Text: Æ 7 SGS-THOMSON MKI48Z18 ^ 7# l* ® S iLi(M (ô)K i(g S CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40’C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES.


    OCR Scan     		PDF MKI48Z18 MKI48Z18 I48Z18 PHDIP28

    Untitled

    Abstract: No abstract text available
    Text: SCS-THOMSON MKI48Z18 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE


    OCR Scan     		PDF MKI48Z18 MKI48Z18 PHDIP28 100ns

    Untitled

    Abstract: No abstract text available
    Text: 55E /T T *7 # . P • 7 ^ 5 3 7 0036365 S C S -1 H O M S O N * [l» [i g « M (g § 376 s 6 ■S6TH T -H é -¿ 3 - / s - thomson M K I4 8 Z 1 8 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA ■ INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL CO NTRO L C IR C U IT AND ENERGY


    OCR Scan     		PDF MKI48Z18 PHDIP28 T-46-23-12 100ns ----------------------------SCS-mOMSON904

    T8570

    Abstract: No abstract text available
    Text: T S G S -T H O M S O N “ 7# M K48Z30 M K48Z30Y rZ CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS


    OCR Scan     		PDF K48Z30 K48Z30Y MK48Z30 MK48Z30Y-4 MK48Z30 MK48Z30/30Y. MK48Z30/30Y K48Z30, T8570

    Untitled

    Abstract: No abstract text available
    Text: MK48Z30 MK48Z30Y SGS-THOMSON mo CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTtiA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS @ 25’C.


    OCR Scan     		PDF MK48Z30 MK48Z30Y MK48Z30 MK48Z30Y-4 MK48Z30/30Y. MK48Z30/30Y K48Z30,