STATIC VAR COMPENSATOR
Abstract: 12V DC sine wave inverters circuit diagram press pack thyristor 9000 VDRM press pack thyristor 10000 VDRM HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor press pack thyristor 8000 VDRM high power thyristor Vdrm 6000 thyristor 2800A
Text: Mitsubishi Ultra High Voltage Thyristors / Diodes FT1500AU-240 FD2000DU-120 1500 Amperes / 12000 Volts (2000 Amperes / 6000 Volts) Mitsubishi Ultra High Voltage Thyristors are used in high voltage AC Switch and Static Var Compensator (SVC) applications.
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FT1500AU-240
FD2000DU-120
Amperes/12000
STATIC VAR COMPENSATOR
12V DC sine wave inverters circuit diagram
press pack thyristor 9000 VDRM
press pack thyristor 10000 VDRM
HIGH VOLTAGE THYRISTOR
thyristor 12000V 1500A
press pack thyristor
press pack thyristor 8000 VDRM
high power thyristor Vdrm 6000
thyristor 2800A
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static var compensator
Abstract: HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240
Text: Mitsubishi Thyristor FT1500AU-240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts J x K (BOTH SIDES) H TYP GATE (WHITE) G TYP AUX CATHODE POTENTIAL CONNECTOR (RED) F
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FT1500AU-240
Amperes/12000
2000V)
1050mA
static var compensator
HIGH VOLTAGE THYRISTOR
thyristor 12000V 1500A
press pack thyristor 8000 VDRM
THYRISTOR H 1500
press pack thyristor
high power thyristor Vdrm 6000
press pack thyristor 10000 VDRM
FT1500AU-240
U240
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press pack thyristor 8000 VDRM
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-01 Nov.11 • Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications
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20Q8500
5SYA1073-01
20Q850mechanical
CH-5600
press pack thyristor 8000 VDRM
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Untitled
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 52x103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-03 Jan. 13 • Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications
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20N8500
5SYA1072-03
CH-5600
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Untitled
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 47.5•103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-04 Dec. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications
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20N8500
5SYA1072-04
CH-5600
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5STP20N8500
Abstract: 20N8500 20N850 GTO thyristor ABB 50281 abb phase control thyristors AA115 C115 Thyristor
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-02 Jan. 11 • Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications
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20N8500
5SYA1072-02
20N85echanical
CH-5600
5STP20N8500
20N8500
20N850
GTO thyristor ABB
50281
abb phase control thyristors
AA115
C115 Thyristor
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abb phase control thyristors
Abstract: 5STP20N8500
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-02 Jan. 11 • Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications
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20N8500
5SYA1072-02
20N85chanical
CH-5600
abb phase control thyristors
5STP20N8500
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Untitled
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 52x103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-02 Jan.13 • Patented free-floating silicon technology · Low on-state and switching losses · Optimum power handling capability
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20Q8500
5SYA1073-02
CH-5600
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5STP20Q8500
Abstract: 20Q8500 vt115 ch 8500 abb phase control thyristors
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-01 Nov.11 Patented free-floating silicon technology Low on-state and switching losses Optimum power handling capability
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20Q8500
5SYA1073-01
20Q8500
CH-5600
5STP20Q8500
vt115
ch 8500
abb phase control thyristors
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Untitled
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 47.5•103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-03 Dec. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Optimum power handling capability
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20Q8500
5SYA1073-03
CH-5600
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5SYA2020
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1600 1901 2987 27.3x103 0.948 0.152 V A A A V mΩ Phase Control Thyristor 5STP 20F1601 Doc. No. 5SYA1061-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications
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20F1601
5SYA1061-01
20F1201
20F1401
5SYA2020
5SYA2034
CH-5600
5SYA2020
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ch 8500
Abstract: ABB 5STP 12 press pack thyristor 8000 VDRM press pack thyristor 9000 VDRM ABB thyristor 5 5SYA2020
Text: VDRM VDSM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = = 8000 8500 1200 1880 35x103 1.25 0.48 V V A A A V mΩ Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-02 Nov. 04 • Patented free-floating silicon technology • Low on-state and switching losses
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12N8500
5SYA1044-02
12N8500
12N8200
12N7800
5SYA2020
5SYA2034
CH-5600
ch 8500
ABB 5STP 12
press pack thyristor 8000 VDRM
press pack thyristor 9000 VDRM
ABB thyristor 5
5SYA2020
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ABB thyristor 5
Abstract: 5SYA2020 5stp34h1601 5STP34H1201
Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1600 3370 5292 49x103 0.94 0.066 V A A A V mΩ Phase Control Thyristor 5STP 34H1601 Doc. No. 5SYA1065-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications
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34H1601
5SYA1065-01
34H1601
34H1401
34H1201
5SYA2020
5SYA2034
CH-5600
ABB thyristor 5
5SYA2020
5stp34h1601
5STP34H1201
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5sya2020
Abstract: 1-6f-24
Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 2800 1512 2375 23.6x103 1.02 0.265 V A A A V mΩ Phase Control Thyristor 5STP 16F2801 Doc. No. 5SYA1064-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications
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16F2801
5SYA1064-01
16F2401
16F2601
5SYA2020
5SYA2034
CH-5600
5sya2020
1-6f-24
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ABB thyristor 5
Abstract: 5SYA2020 17F2001
Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 2200 1702 2674 25.5x103 0.992 0.206 V A A A V mΩ Phase Control Thyristor 5STP 17F2201 Doc. No. 5SYA1063-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications
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17F2201
5SYA1063-01
17F1801
17F2001
5SYA2020
5SYA2034
CH-5600
ABB thyristor 5
5SYA2020
17F2001
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5SYA2020
Abstract: press pack thyristor 8000 VDRM 5SYA2034
Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 2800 2670 4193 43x103 1.039 0.127 V A A A V mΩ Phase Control Thyristor 5STP 27H2801 Doc. No. 5SYA1068-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications
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27H2801
5SYA1068-01
27H2801
27H2601
27H2401
5SYA2020
5SYA2034
CH-5600
5SYA2020
press pack thyristor 8000 VDRM
5SYA2034
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press pack thyristor 9000 VDRM
Abstract: ABB thyristor 5 5SYA2020
Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1800 1825 2867 26.25x103 0.965 0.17 V A A A V mΩ Phase Control Thyristor 5STP 18F1801 Doc. No. 5SYA1062-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications
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18F1801
5SYA1062-01
18F1401
18F1601
5SYA2020
5SYA2034
CH-5600
press pack thyristor 9000 VDRM
ABB thyristor 5
5SYA2020
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30H1601
Abstract: ABB thyristor 5 5SYA2020
Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1800 3108 4882 47x103 0.984 0.081 V A A A V mΩ Phase Control Thyristor 5STP 30H1801 Doc. No. 5SYA1066-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications
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30H1801
5SYA1066-01
30H1801
30H1601
30H1401
5SYA2020
5SYA2034
CH-5600
30H1601
ABB thyristor 5
5SYA2020
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abb phase control thyristors
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 2810 A = 4410 A = 65x103 A = 1.12 V = 0.29 m Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-06 Nov. 12 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications
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26N6500
5SYA1001-06
26N6500
CH-5600
abb phase control thyristors
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abb phase control thyristors
Abstract: 5STP45Q2800
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 5490 A = 8625 A = 75x103 A = 0.86 V = 0.07 mΩ Phase Control Thyristor 5STP 45Q2800 Doc. No. 5SYA1050-02 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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45Q2800
5SYA1050-02
45Q2800
CH-5600
abb phase control thyristors
5STP45Q2800
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Untitled
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 2810 A = 4410 A = 45x103 A = 1.12 V = 0.29 m Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-05 Jan. 11 • Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications
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26N6500
5SYA1001-05
26N65echanical
CH-5600
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abb phase control thyristors
Abstract: 5STP52U5200
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 5200 V = 5060 A = 7940 A = 85.2x103 A = 1.04 V = 0.115 m Phase Control Thyristor 5STP 52U5200 Doc. No. 5SYA1042-05 Jan. 11 • Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications
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52U5200
5SYA1042-05
52echanical
CH-5600
abb phase control thyristors
5STP52U5200
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NTE5405
Abstract: GT 32 DIAC
Text: N T E ELECTRON ICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (All Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate
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NTE5480
NTE5411
NTE5400
NTE5452
NTE5453
NTE5442
NTE5470
NTE5401
NTE5402
NTE5413
NTE5405
GT 32 DIAC
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nte5455
Abstract: nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629
Text: N T E ELECTRONICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (A ll Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate
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b431SSci
NTE5480
NTE5400
NTE5411
NTE5452
NTE5453
NTE5470
NTE5442
NTE5481
NTE5461
nte5455
nte5679
NTE5402
NTE5556
NTE5614
NTE5534
NTE5457
NTE5646
NTE5468
NTE5629
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