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    PRESS PACK THYRISTOR 8000 VDRM Search Results

    PRESS PACK THYRISTOR 8000 VDRM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ELANSC300-33VC Rochester Electronics LLC Microcontroller, 32-Bit, 33MHz, CMOS, PQFP208, TQFP-208 Visit Rochester Electronics LLC Buy
    MC68040FE33A Rochester Electronics LLC Rochester Manufactured 68040, RISC 32-bit Microprocessor 33MHz, 184 CQFP Package, Commercial Temp spec. Visit Rochester Electronics LLC Buy
    CY7C4285-15ASC Rochester Electronics LLC FIFO, 64KX18, 10ns, Synchronous, CMOS, PQFP64, 10 X 10 MM, TQFP-64 Visit Rochester Electronics LLC Buy
    ML6431CH Rochester Electronics LLC Consumer Circuit, BICMOS, PQFP32, 7 X 7 MM, 1 MM HEIGHT, TQFP-32 Visit Rochester Electronics LLC Buy
    ML6430CH Rochester Electronics LLC Consumer Circuit, BICMOS, PQFP32, 7 X 7 MM, 1 MM HEIGHT, TQFP-32 Visit Rochester Electronics LLC Buy

    PRESS PACK THYRISTOR 8000 VDRM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STATIC VAR COMPENSATOR

    Abstract: 12V DC sine wave inverters circuit diagram press pack thyristor 9000 VDRM press pack thyristor 10000 VDRM HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor press pack thyristor 8000 VDRM high power thyristor Vdrm 6000 thyristor 2800A
    Text: Mitsubishi Ultra High Voltage Thyristors / Diodes FT1500AU-240 FD2000DU-120 1500 Amperes / 12000 Volts (2000 Amperes / 6000 Volts) Mitsubishi Ultra High Voltage Thyristors are used in high voltage AC Switch and Static Var Compensator (SVC) applications.


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    FT1500AU-240 FD2000DU-120 Amperes/12000 STATIC VAR COMPENSATOR 12V DC sine wave inverters circuit diagram press pack thyristor 9000 VDRM press pack thyristor 10000 VDRM HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor press pack thyristor 8000 VDRM high power thyristor Vdrm 6000 thyristor 2800A PDF

    static var compensator

    Abstract: HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240
    Text: Mitsubishi Thyristor FT1500AU-240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts J x K (BOTH SIDES) H TYP GATE (WHITE) G TYP AUX CATHODE POTENTIAL CONNECTOR (RED) F


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    FT1500AU-240 Amperes/12000 2000V) 1050mA static var compensator HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240 PDF

    press pack thyristor 8000 VDRM

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-01 Nov.11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications


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    20Q8500 5SYA1073-01 20Q850mechanical CH-5600 press pack thyristor 8000 VDRM PDF

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 52x103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-03 Jan. 13 • Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications


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    20N8500 5SYA1072-03 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 47.5•103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-04 Dec. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications


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    20N8500 5SYA1072-04 CH-5600 PDF

    5STP20N8500

    Abstract: 20N8500 20N850 GTO thyristor ABB 50281 abb phase control thyristors AA115 C115 Thyristor
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-02 Jan. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications


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    20N8500 5SYA1072-02 20N85echanical CH-5600 5STP20N8500 20N8500 20N850 GTO thyristor ABB 50281 abb phase control thyristors AA115 C115 Thyristor PDF

    abb phase control thyristors

    Abstract: 5STP20N8500
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-02 Jan. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications


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    20N8500 5SYA1072-02 20N85chanical CH-5600 abb phase control thyristors 5STP20N8500 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 52x103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-02 Jan.13 • Patented free-floating silicon technology · Low on-state and switching losses · Optimum power handling capability


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    20Q8500 5SYA1073-02 CH-5600 PDF

    5STP20Q8500

    Abstract: 20Q8500 vt115 ch 8500 abb phase control thyristors
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-01 Nov.11 Patented free-floating silicon technology Low on-state and switching losses Optimum power handling capability


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    20Q8500 5SYA1073-01 20Q8500 CH-5600 5STP20Q8500 vt115 ch 8500 abb phase control thyristors PDF

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 47.5•103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-03 Dec. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Optimum power handling capability


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    20Q8500 5SYA1073-03 CH-5600 PDF

    5SYA2020

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1600 1901 2987 27.3x103 0.948 0.152 V A A A V mΩ Phase Control Thyristor 5STP 20F1601 Doc. No. 5SYA1061-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications


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    20F1601 5SYA1061-01 20F1201 20F1401 5SYA2020 5SYA2034 CH-5600 5SYA2020 PDF

    ch 8500

    Abstract: ABB 5STP 12 press pack thyristor 8000 VDRM press pack thyristor 9000 VDRM ABB thyristor 5 5SYA2020
    Text: VDRM VDSM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = = 8000 8500 1200 1880 35x103 1.25 0.48 V V A A A V mΩ Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-02 Nov. 04 • Patented free-floating silicon technology • Low on-state and switching losses


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    12N8500 5SYA1044-02 12N8500 12N8200 12N7800 5SYA2020 5SYA2034 CH-5600 ch 8500 ABB 5STP 12 press pack thyristor 8000 VDRM press pack thyristor 9000 VDRM ABB thyristor 5 5SYA2020 PDF

    ABB thyristor 5

    Abstract: 5SYA2020 5stp34h1601 5STP34H1201
    Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1600 3370 5292 49x103 0.94 0.066 V A A A V mΩ Phase Control Thyristor 5STP 34H1601 Doc. No. 5SYA1065-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications


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    34H1601 5SYA1065-01 34H1601 34H1401 34H1201 5SYA2020 5SYA2034 CH-5600 ABB thyristor 5 5SYA2020 5stp34h1601 5STP34H1201 PDF

    5sya2020

    Abstract: 1-6f-24
    Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 2800 1512 2375 23.6x103 1.02 0.265 V A A A V mΩ Phase Control Thyristor 5STP 16F2801 Doc. No. 5SYA1064-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications


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    16F2801 5SYA1064-01 16F2401 16F2601 5SYA2020 5SYA2034 CH-5600 5sya2020 1-6f-24 PDF

    ABB thyristor 5

    Abstract: 5SYA2020 17F2001
    Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 2200 1702 2674 25.5x103 0.992 0.206 V A A A V mΩ Phase Control Thyristor 5STP 17F2201 Doc. No. 5SYA1063-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications


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    17F2201 5SYA1063-01 17F1801 17F2001 5SYA2020 5SYA2034 CH-5600 ABB thyristor 5 5SYA2020 17F2001 PDF

    5SYA2020

    Abstract: press pack thyristor 8000 VDRM 5SYA2034
    Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 2800 2670 4193 43x103 1.039 0.127 V A A A V mΩ Phase Control Thyristor 5STP 27H2801 Doc. No. 5SYA1068-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications


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    27H2801 5SYA1068-01 27H2801 27H2601 27H2401 5SYA2020 5SYA2034 CH-5600 5SYA2020 press pack thyristor 8000 VDRM 5SYA2034 PDF

    press pack thyristor 9000 VDRM

    Abstract: ABB thyristor 5 5SYA2020
    Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1800 1825 2867 26.25x103 0.965 0.17 V A A A V mΩ Phase Control Thyristor 5STP 18F1801 Doc. No. 5SYA1062-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications


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    18F1801 5SYA1062-01 18F1401 18F1601 5SYA2020 5SYA2034 CH-5600 press pack thyristor 9000 VDRM ABB thyristor 5 5SYA2020 PDF

    30H1601

    Abstract: ABB thyristor 5 5SYA2020
    Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1800 3108 4882 47x103 0.984 0.081 V A A A V mΩ Phase Control Thyristor 5STP 30H1801 Doc. No. 5SYA1066-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications


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    30H1801 5SYA1066-01 30H1801 30H1601 30H1401 5SYA2020 5SYA2034 CH-5600 30H1601 ABB thyristor 5 5SYA2020 PDF

    abb phase control thyristors

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 2810 A = 4410 A = 65x103 A = 1.12 V = 0.29 m Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-06 Nov. 12 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications


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    26N6500 5SYA1001-06 26N6500 CH-5600 abb phase control thyristors PDF

    abb phase control thyristors

    Abstract: 5STP45Q2800
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 5490 A = 8625 A = 75x103 A = 0.86 V = 0.07 mΩ Phase Control Thyristor 5STP 45Q2800 Doc. No. 5SYA1050-02 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


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    45Q2800 5SYA1050-02 45Q2800 CH-5600 abb phase control thyristors 5STP45Q2800 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 2810 A = 4410 A = 45x103 A = 1.12 V = 0.29 m Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-05 Jan. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications


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    26N6500 5SYA1001-05 26N65echanical CH-5600 PDF

    abb phase control thyristors

    Abstract: 5STP52U5200
    Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 5200 V = 5060 A = 7940 A = 85.2x103 A = 1.04 V = 0.115 m Phase Control Thyristor 5STP 52U5200 Doc. No. 5SYA1042-05 Jan. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications


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    52U5200 5SYA1042-05 52echanical CH-5600 abb phase control thyristors 5STP52U5200 PDF

    NTE5405

    Abstract: GT 32 DIAC
    Text: N T E ELECTRON ICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (All Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate


    OCR Scan
    NTE5480 NTE5411 NTE5400 NTE5452 NTE5453 NTE5442 NTE5470 NTE5401 NTE5402 NTE5413 NTE5405 GT 32 DIAC PDF

    nte5455

    Abstract: nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629
    Text: N T E ELECTRONICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (A ll Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate


    OCR Scan
    b431SSci NTE5480 NTE5400 NTE5411 NTE5452 NTE5453 NTE5470 NTE5442 NTE5481 NTE5461 nte5455 nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629 PDF