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    PRHMB75B12 Search Results

    PRHMB75B12 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PRHMB75B12 Nihon Inter Electronics IGBT MODULE Chopper 75A 1200V Original PDF
    PRHMB75B12A Nihon Inter Electronics IGBT MODULE Chopper 75A 1200V Original PDF

    PRHMB75B12 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PRHMB75B12 IGBT MODULE Chopper 75A 1200V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension mm Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation


    Original
    PDF PRHMB75B12 fig11-Tansient

    PRHMB75B12

    Abstract: No abstract text available
    Text: PRHMB75B12 IGBT MODULE Chopper 75A 1200V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension mm Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation


    Original
    PDF PRHMB75B12 fig11-Tansient PRHMB75B12

    Untitled

    Abstract: No abstract text available
    Text: PRHMB75B12 IGBT MODULE Chopper 75A 1200V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension mm Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation


    Original
    PDF PRHMB75B12 fig11-Tansient

    PRHMB75B12A

    Abstract: No abstract text available
    Text: PRHMB75B12A IGBT MODULE Chopper 75A 1200V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension mm Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation


    Original
    PDF PRHMB75B12A fig11-Tansient PRHMB75B12A

    PT76S16

    Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
    Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


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    PDF

    508RP

    Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
    Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


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    1200VIGBT

    Abstract: No abstract text available
    Text: 「Bシリーズ」 1200V IGBTモジュールの紹介 高速性と低損失を実現した 新世代チップを採用 日本インター株式会社 モジュール製品部 主な特性の改良点 Cシリーズとの比較


    Original
    PDF 1200VIGBT 100mA 00A/s 100A1 20kW440VPWM 20kHz PDMB100C12 PDMB100B12 CM100TU-24F 1200VIGBT

    PDM5001

    Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
    Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH


    Original
    PDF C3557 PH1503 PH150 PDM5001 PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16

    FCGS20A12

    Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
    Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


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    PDF