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    CUI Inc PRME1-S15-S5-M

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    PRME Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PRME15002 SRC Devices Dip 14 Series Reed Relays Original PDF
    PRME15003 SRC Devices Dip 14 Series Reed Relays Original PDF
    PRME15005 SRC Devices Dip 14 Series Reed Relays Original PDF
    PRME1-S12-S12-M CUI DC-DC ISOLATED 3K, 1 W, 11.4~12. Original PDF
    PRME1-S12-S12-M-TR CUI DC-DC ISOLATED 3K, 1 W, 11.4~12. Original PDF
    PRME1-S12-S15-M CUI DC-DC ISOLATED 3K, 1 W, 11.4~12. Original PDF
    PRME1-S12-S15-M-TR CUI DC-DC ISOLATED 3K, 1 W, 11.4~12. Original PDF
    PRME1-S12-S5-M CUI DC-DC ISOLATED 3K, 1 W, 11.4~12. Original PDF
    PRME1-S12-S5-M-TR CUI DC-DC ISOLATED 3K, 1 W, 11.4~12. Original PDF
    PRME1-S15-S5-M CUI DC-DC ISOLATED 3K, 1 W, 14.25~15 Original PDF
    PRME1-S15-S5-M-TR CUI DC-DC ISOLATED 3K, 1 W, 14.25~15 Original PDF
    PRME1-S24-S12-M CUI DC-DC ISOLATED 3K, 1 W, 22.8~25. Original PDF
    PRME1-S24-S12-M-TR CUI DC-DC ISOLATED 3K, 1 W, 22.8~25. Original PDF
    PRME1-S24-S15-M CUI DC-DC ISOLATED 3K, 1 W, 22.8~25. Original PDF
    PRME1-S24-S15-M-TR CUI DC-DC ISOLATED 3K, 1 W, 22.8~25. Original PDF
    PRME1-S24-S5-M CUI DC-DC ISOLATED 3K, 1 W, 22.8~25. Original PDF
    PRME1-S24-S5-M-TR CUI DC-DC ISOLATED 3K, 1 W, 22.8~25. Original PDF
    PRME25005 SRC Devices Dip 14 Series Reed Relays Original PDF

    PRME Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    REED RELAY 15005

    Abstract: prme 15005 prma 1a05 relay REED RELAY 15003 prme 15002 REED RELAY 15005 PIN DETAILS dyad 15003 reed relay 2a05 prme 15005 ab PRMA 1B05 IC
    Text: DEVICES SRC DIP 14 SERIES REED RELAYS MSS2 • MSS7 ■ PRMA ■ DSS7 ■ PRME ■ MVS2 ■ MVS7 DESCRIPTION SRC Device’s epoxy molded DIP 14 Series offers a variety of contacts and schematics to meet the needs of a wide range of applications. It features the MVS2/MVS7 models designed for high reliability. The MSS2/7 DIPs are


    Original     		PDF PRMA1A05 1-866-SRC-8668 REED RELAY 15005 prme 15005 prma 1a05 relay REED RELAY 15003 prme 15002 REED RELAY 15005 PIN DETAILS dyad 15003 reed relay 2a05 prme 15005 ab PRMA 1B05 IC

    CP Clare Prme 15002

    Abstract: CP Clare Prme 15005 clare 15005 B REED RELAY 15005 CLARE REED RELAY PRMA 1a24 clare prme 15005 CP Clare Prme 15003 cp clare reed relay prme 15005 CLARE REED RELAY PRMA
    Text: DIP 14 SERIES REED RELAYS MSS2 • MSS7 ■ PRMA ■ DSS7 ■ PRME ■ MVS2 ■ MVS7 DESCRIPTION CP Clare’s epoxy molded DIP 14 Series offers a variety of contacts and schematics to meet the needs of a wide range of applications. It features the MVS2/MVS7 models designed for high reliability. The


    Original     		PDF MVS21A05 1-800-CP CP Clare Prme 15002 CP Clare Prme 15005 clare 15005 B REED RELAY 15005 CLARE REED RELAY PRMA 1a24 clare prme 15005 CP Clare Prme 15003 cp clare reed relay prme 15005 CLARE REED RELAY PRMA

    REED RELAY 15005

    Abstract: prme 15003 PRMA prme 15005 prme 15005 ab prme 15005 A 2a12 relay PRMA 2A12 dyad relay PRMA prme 15002
    Text: DEVICES SRC DIP 14 SERIES REED RELAYS MSS2 • MSS7 ■ PRMA ■ DSS7 ■ PRME ■ MVS2 ■ MVS7 DESCRIPTION SRC Device’s epoxy molded DIP 14 Series offers a variety of contacts and schematics to meet the needs of a wide range of applications. It features the MVS2/MVS7 models designed for high reliability. The MSS2/7 DIPs are


    Original     		PDF PRMA1A05 1-866-SRC-8668 REED RELAY 15005 prme 15003 PRMA prme 15005 prme 15005 ab prme 15005 A 2a12 relay PRMA 2A12 dyad relay PRMA prme 15002

    REED RELAY 15005

    Abstract: REED RELAY 15003 prme 15002 prme 15005 prma 1a05 relay prme 15005 B dyad 15003 REED RELAY 15005 PIN DETAILS prme 15005 A prme 15005 ab
    Text: DIP 14 SERIES REED RELAYS MSS2 • MSS7 ■ PRMA ■ DSS7 ■ PRME ■ MVS2 ■ MVS7 DESCRIPTION REMtech’s epoxy molded DIP 14 Series offers a variety of contacts and schematics to meet the needs of a wide range of applications. It features the MVS2/MVS7 models designed for high reliability. The MSS2/7 DIPs are


    Original     		PDF PRMA1A05 REED RELAY 15005 REED RELAY 15003 prme 15002 prme 15005 prma 1a05 relay prme 15005 B dyad 15003 REED RELAY 15005 PIN DETAILS prme 15005 A prme 15005 ab

    K7Q161852A

    Abstract: K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16
    Text: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control


    Original     		PDF K7Q163652A K7Q161852A 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit K7Q161852A K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16

    10D-11

    Abstract: K7R160982B K7R160982B-FC16 K7R160982B-FC20 K7R161882B K7R161882B-FC16 K7R161882B-FC20 K7R163682B K7R163682B-FC16 K7R163682B-FC20
    Text: K7R163682B K7R161882B K7R160982B 512Kx36 & 1Mx18 & 2Mx9 QDR TM II b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Oct. 17, 2002 Advance 0.1 1. Change the Boundary scan exit order.


    Original     		PDF K7R163682B K7R161882B K7R160982B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit, 10D-11 K7R160982B K7R160982B-FC16 K7R160982B-FC20 K7R161882B K7R161882B-FC16 K7R161882B-FC20 K7R163682B K7R163682B-FC16 K7R163682B-FC20

    K7Q161864B-FC16

    Abstract: D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16
    Text: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		PDF K7Q163664B K7Q161864B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit K7Q161864B-FC16 D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16

    D0-35

    Abstract: K7J161882B K7J161882B-FC16 K7J161882B-FC20 K7J161882B-FC25 K7J163682B K7J163682B-FC16 K7J163682B-FC20 K7J163682B-FC25
    Text: K7J163682B K7J161882B 512Kx36 & 1Mx18 DDR II SIO b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Dec. 16, 2002 Advance 0.1 1. Change the JTAG Block diagram Dec. 26, 2002 Preliminary


    Original     		PDF K7J163682B K7J161882B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit 165FBGA D0-35 K7J161882B K7J161882B-FC16 K7J161882B-FC20 K7J161882B-FC25 K7J163682B K7J163682B-FC16 K7J163682B-FC20 K7J163682B-FC25

    LR 4100 RELAY

    Abstract: No abstract text available
    Text: 58 AM TE-32 ASSP Telecom Standard Product Data Sheet Released r, 20 05 12 :5 3: PM4332 y, 13 De ce m be TE-32 in er In co n Tu es da High Density 32 Channel T1/E1/J1 Framer Proprietary and Confidential Released Issue No. 6: November 2005 Do wn lo ad ed by


    Original     		PDF TE-32 PMC-2011402, TE-32 PM4332 LR 4100 RELAY

    LR 4100 RELAY

    Abstract: PM8316PGI 315-B PM8316-PGI
    Text: PM8316 TEMUX 84 RELEASED DATA SHEET ISSUE 9 HIGH DENSITY T1/E1 FRAMER WITH INTEGRATED VT/TU MAPPER AND M13 MUX 10 :3 5: 14 PM PMC-1991437 ,1 3M ar ch ,2 00 6 PM8316 co n Mo nd ay TEMUX 84 DATA SHEET Do wn l oa de d by C on te nt T ea m of Pa rtm in er In HIGH DENSITY T1/E1 FRAMER WITH


    Original     		PDF PMC-1991437 PM8316 PM8316 PMC-1991437 PMC-1991191 LR 4100 RELAY PM8316PGI 315-B PM8316-PGI

    Untitled

    Abstract: No abstract text available
    Text: K7I163684B K7I161884B 512Kx36 & 1Mx18 DDRII CIO b4 SRAM 18Mb DDRII SRAM Specification 165FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7I163684B K7I161884B 512Kx36 1Mx18 165FBGA 11x15

    Untitled

    Abstract: No abstract text available
    Text: K7Q323684M K7Q321884M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.


    Original     		PDF K7Q323684M K7Q321884M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit K7Q3236

    Untitled

    Abstract: No abstract text available
    Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.


    Original     		PDF K7Q323682M K7Q321882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit

    Untitled

    Abstract: No abstract text available
    Text: K7R323684C K7R321884C K7R320984C Preliminary TM 1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K7R323684C K7R321884C K7R320984C 1Mx36, 2Mx18

    IR 10D 8A

    Abstract: No abstract text available
    Text: K7I163684B K7I161884B K7I160884B Advance 512Kx36 & 1Mx18 & 2Mx8 DDRII CIO b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx8-bit DDRII CIO b4 SRAM Revision History Rev. No. 0.0 History 1. Initial document. Draft Date Remark Dec. 16, 2002 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		PDF K7I163684B K7I161884B K7I160884B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit, IR 10D 8A

    JTAG 10P

    Abstract: K7R641882M-FC25 K7R640982M-FC25 K7R643682M-FC20
    Text: K7R643682M K7R641882M K7R640982M Preliminary 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep, 14 2002 Advance 0.1 1. Update AC timing characteristics.


    Original     		PDF K7R643682M K7R641882M K7R640982M 2Mx36 4Mx18 2Mx36-bit, 4Mx18-bit, K7R640982M JTAG 10P K7R641882M-FC25 K7R640982M-FC25 K7R643682M-FC20

    Untitled

    Abstract: No abstract text available
    Text: K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001 Advance 0.1


    Original     		PDF K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit,

    K7R643684

    Abstract: No abstract text available
    Text: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb M-die QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7R643684M K7R641884M 2Mx36 4Mx18 11x15 K7R643684

    Untitled

    Abstract: No abstract text available
    Text: K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7I643682M K7I641882M 2Mx36 4Mx18 11x15

    Untitled

    Abstract: No abstract text available
    Text: User Guide for QDRII as QDRI 18Mb QDRI 2Burst B-die Preliminary 512Kx36 & 1Mx18 QDR TM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Technical Note Revision History History Draft Date Remark 0.0 1. Initial document. April. 29, 2003 Advance 0.1 1. Delete the -20 speed bin part.


    Original     		PDF 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit 11x15

    Untitled

    Abstract: No abstract text available
    Text: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final 1.1 1. Added the Part no. of Pb Free Package on page.2


    Original     		PDF K7Q163664B K7Q161864B 512Kx36-bit, 1Mx18-bit 512Kx36 1Mx18 K7Q1636lid

    Untitled

    Abstract: No abstract text available
    Text: K7Q323652M K7Q321852M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5. 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA


    Original     		PDF K7Q323652M K7Q321852M 1Mx36-bit, 2Mx18-bit 1Mx36 2Mx18 -20part

    clare 15005 B

    Abstract: prme 15005 SS71A REED RELAY 15005 clare prme 15005 prme 15002 CLARE REED RELAY PRMA clare 25005 prme 15005 A 15005 clare
    Text: DIP-14 14 Pin Dual-in-Lirte Packages E ngineering S p ec ific atio n s MSS2 MSS7 PRMA Form A and B PRMA (Form C) DSS7 PRME C o n tac t Form 1A 1A 1A , 2A, 1 B 1C 1A 1A 50VA 350VD C or Peak AC 1.00 A 2.00 A 50VA 350VDC or Peak AC 1.00A 2.00A 10VA 100VDC or


    OCR Scan     		PDF DIP-14 350VD 350VDC 100VDC clare 15005 B prme 15005 SS71A REED RELAY 15005 clare prme 15005 prme 15002 CLARE REED RELAY PRMA clare 25005 prme 15005 A 15005 clare

    clare relay cup

    Abstract: CLARE REED RELAY PRMA REED RELAY clare hgsm REED RELAY clare cUP solid state switches hgsm clare hgsm hgrm OptoMOS Surge Arresters
    Text: Table of Contents Contents The Clare Advantage Page 4-5 Electromagnetic Relays CLAREification Chart Electromagnetic Relays DIP-14 (14 Pin Dual-In-Line Packages) MSS2, MSS7,PRMA, DSS7, PRME DIP-16 (16 Pin Dual-ln-Line Packages) HGZM, MSS6, LM, LX SIP (Single-ln-Line Packages) DSS4, MSS4


    OCR Scan     		PDF DIP-14 DIP-16 DIP-10 MX100, MX200 MIT-101, MIT-115, MIT-125 clare relay cup CLARE REED RELAY PRMA REED RELAY clare hgsm REED RELAY clare cUP solid state switches hgsm clare hgsm hgrm OptoMOS Surge Arresters