1N5806
Abstract: 1N5802 CMR3U-01 CPD17 UES1101 UES1106
Text: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 14 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization
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CPD17
1N5802
1N5806
UES1101
UES1106
CMR3U-01
22-March
1N5806
CPD17
UES1106
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Untitled
Abstract: No abstract text available
Text: PROCESS CPD25 Fast Recovery Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 11 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization
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CPD25
1N5185
1N5188
1N5415
1N5420
29-April
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mil 43
Abstract: process 65 die process information process 88
Text: Section 6 Bipolar Transistor Dice Process 03 . 6-4 Process 05 . 6-4
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Mil-Std-883 Wire Bond Pull Method 2011
Abstract: mil-std-883 mil-std-883 2015 MIL-STD883 MIL-STD-883 Method 2010 MIL-STD-883 method 2011 mil-std-883* 2015 centrifuge
Text: HOLT CERAMIC PACKAGE PROCESS OPTIONS I = Industrial Grade -40°C to +85°C M = Military Grade (- 55°C to +125°) T = High Temp Grade (-55°C to +125°C) DSCC = Mil-STD-883 Compliant PROCESS FLOW PROCESS STEP I T M DSCC COMMENTS X X X X INCOMING WAFER INSPECTION
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Mil-STD-883
MIL-STD-883,
Mil-Std-883 Wire Bond Pull Method 2011
mil-std-883 2015
MIL-STD883
MIL-STD-883 Method 2010
MIL-STD-883 method 2011
mil-std-883* 2015
centrifuge
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transistor 2N3563
Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .
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Mounting and Installation Instructions AC 800f ABB
Abstract: DCS AC 800F ABB ISA-S71 EI 813F 783F 731F Freelance 800f manual AC800F ABB transmitter ask 800 772F
Text: Freelance The hybrid process control system System description 2 System description | Freelance. The hybrid process control system. Contents Freelance: The hybrid process control system Page 4 System architecture Page 6 The controllers Page 8 Remote I/O Page 16
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cmos transistor 0.35 um
Abstract: XH035 xh03 CMOS Process Family nmos transistor 0.35 um analog hv 102 Ultrasonic Piezoelectric poly silicon resistor inkjet module power mos transistor selection
Text: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XH035 Analog, RF and 100V High Voltage Options with Non Volatile Memory Modular 0.35 µm CMOS process with 4 different process cores for analog/mixed-signal and high voltage applications. Modules Overview
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XH035
cmos transistor 0.35 um
XH035
xh03
CMOS Process Family
nmos transistor 0.35 um analog
hv 102
Ultrasonic Piezoelectric
poly silicon resistor
inkjet module
power mos transistor selection
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81F64842B
Abstract: No abstract text available
Text: Introduction This document outlines Atmel’s process for conversion from FPGA/CPLD to ULC. Figure 1. ULC Conversion Flow Process FPGA/CPLD Netlist Retarget ULC Conversion Process Design & Supply Rules Verification Bonding Creation & Verification Scan, Bist, Jtag Insertion, ATPG Fault Coverage
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03-Dec-01
81F64842B
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Yokogawa differential pressure capillary
Abstract: No abstract text available
Text: Process chemical seals Series D900 - D920 Various types of ISO- and ANSI-compliant flanges available on request High temperature applications up to 400°C Compatible with process pressure transmitters D9xx process chemical seals are specially designed to equip various measu‑
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PN100
PN150
PN250
PN420
Yokogawa differential pressure capillary
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TN8000
Abstract: WIN32 XE8000 XE8000MP
Text: Technical Note TN8000.19 SW / FW update process TN8000.19 Technical Note XE8000MP and Ride Software - Firmware update process Rev 1 Feb 2006 www.semtech.com 1 Technical Note TN8000.19 SW / FW update process Table of Contents 1 2 2.1 2.2 2.3 3 3.1 3.1.1 3.1.2
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TN8000
XE8000MP
XE8000
WIN32
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philips components LED
Abstract: SAA8116 UPA1021 cmos IMAGE SENSOR I2C interface ic rgb to vga CMOS sensor VGA 160X120 VGA camera i2c IN PROCESS CONTROL format micro cmos camera
Text: The combination of Philips Semiconductors’ in-depth experience in digital imaging and process technologies has led to the development of a dedicated process for cost-effective consumer digital imaging applications. Called SeeMOS, this innovative and unique optimized CMOS process allows Philips
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UPA1021
5K/FP/2pp/0900
philips components LED
SAA8116
cmos IMAGE SENSOR I2C interface
ic rgb to vga
CMOS sensor VGA
160X120
VGA camera i2c
IN PROCESS CONTROL format
micro cmos camera
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Untitled
Abstract: No abstract text available
Text: NJW1175 AUDIO PROCESSOR with BBE ViVA+ • GENERAL DESCRIPTION The NJW1175 is a TV audio processor with BBE ViVA+ High Definition 3D Sound process. BBE's traditional sound clarity enhancement technology is combined with the Mach3BASS process to bass enhancement and the new ViVA 3D process to
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NJW1175
NJW1175
NJW1175V
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Untitled
Abstract: No abstract text available
Text: NJW1175 AUDIO PROCESSOR with BBE ViVA+ • GENERAL DESCRIPTION The NJW1175 is a TV audio processor with BBE ViVA+ High Definition 3D Sound process. BBE's traditional sound clarity enhancement technology is combined with the Mach3BASS process to bass enhancement and the new ViVA 3D process to
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NJW1175
NJW1175
NJW1175V
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0.7 um CMOS process parameters
Abstract: 30X30
Text: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 0.6µm CMOS Process Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters Single or double poly Double metal
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30X30)
0.7 um CMOS process parameters
30X30
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EPIC-1S
Abstract: 74ACT245 EN-4088Z SN74ACT245N EN4088Z
Text: TEXAS INSTRUMENTS Notification for the Addition of CMOS Process to the Sherman Wafer Fabrication Site November 26, 1996 Abstract Texas Instrument’s Sherman Wafer Fabrication Facility has qualified the EPIC-1S CMOS process. The HC, AC, ACT, LV, AHCT and AHC product families are produced from this process and may be
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EN-4088Z
ACT245N
EPIC-1S
74ACT245
EN-4088Z
SN74ACT245N
EN4088Z
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vishaysiliconix
Abstract: JM38510 7705201XA JM38510/19007BEA 7705201ea 77052012A dg504al 5962-9204201MEA DG507AAZ/883 DG508AAK/883
Text: DV 2 August 2002 PCN02012 Dear Vishay-Siliconix Customer: As you are aware, the Vishay-Siliconix metal gate fabrication process was identified as obsolete in June, 2000. This process was replaced with the improved silicon gate process. We have been able to continue to provide metal gate military and commercial
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PCN02012
7705201EA
7705201XA
7052012A
5962-9204201MEA
DG408AZ/883
JM38510/19001BXC
JM38510/19003BXC
JM38510/19007BEA
JM38510/19007BEC
vishaysiliconix
JM38510
7705201XA
JM38510/19007BEA
7705201ea
77052012A
dg504al
5962-9204201MEA
DG507AAZ/883
DG508AAK/883
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ASL3C
Abstract: ALVCH16245 151x24
Text: TEXAS INSTRUMENTS Initial Notification for the ASL3C Process with Retrograde Well to the Freising, Germany Wafer Fabrication Site November 19, 1998 Abstract Texas Instrument’s Friesing, Germany Wafer Fabrication Facility is qualifying the ALS3C process with retrograde well. This process change will affect all products in the ALVCH product family.
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100ical
PCN5349
ASL3C
ALVCH16245
151x24
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30X30
Abstract: SiCr resistor
Text: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 3.0µm N-Well CMOS Process Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UTIX Stepper Single or double poly
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30X30
SiCr resistor
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0.18 um CMOS parameters
Abstract: CAPACITOR Titanium 30X30 0.6 um cmos process 0.18 um CMOS technology
Text: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 0.8µm CMOS Process Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters Single or double poly Double or triple metal
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or175
30X30)
0.18 um CMOS parameters
CAPACITOR Titanium
30X30
0.6 um cmos process
0.18 um CMOS technology
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30X30
Abstract: No abstract text available
Text: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 5.0µm P-Well CMOS Process (For Analog and Mixed Signal Use) Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters
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resistor 1k
Abstract: ids 2560 CAPACITOR Titanium 30X30
Text: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 2.0µm P-Well CMOS Process Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UT1X Stepper Single or double poly
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300mV
30X30)
resistor 1k
ids 2560
CAPACITOR Titanium
30X30
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Surface Mounted Semiconductors General QUALITY • In-line quality assurance to m onitor process reproducibility during m anufacture and initiate any necessary corrective action. C ritical process steps are 100% under statistical process control
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MBB439
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omron k3nx operating manual
Abstract: OMRON OC 222 CH K3NX-AD1A omron k3nx K3NX-VD2A K3NX-VD1A omron* AOI K3NX
Text: Process Meter omRon Process Meter omRon K3NX Process Meter Operation Manual Produced January 1998 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual.
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N90-E1-1
N90-E1-1
0198-2M
omron k3nx operating manual
OMRON OC 222 CH
K3NX-AD1A
omron k3nx
K3NX-VD2A
K3NX-VD1A
omron* AOI
K3NX
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1N485
Abstract: 05G433
Text: ALLEGRO MICROSYSTEMS INC T3 05G433Ö 0 0 0 3 7 6 7 1 • ALGR T-91-01 PROCESS TRO Process TRO Medium-Speed Switching Diode Process TRO produces a non-gold-doped silicon epitaxial diode used primarily as a medium-speed switching device. Designed to 1N485 specifications,
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05G433Ã
T-91-01
1N485
10m-A
05G433
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