M28F256
Abstract: PDIP32 PLCC32
Text: M28F256 256 Kbit 32Kb x8, Bulk Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical
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M28F256
M28F256
120ns
150ns
200ns
AI00689
PDIP32
PLCC32
PDIP32
PLCC32
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PDF
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M28F101
Abstract: PDIP32 PLCC32 TSOP32
Text: M28F101 1 Mbit 128Kb x8, Bulk Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES
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M28F101
128Kb
M28F101
PDIP32
PLCC32
TSOP32
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PDF
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plcc32 pinout
Abstract: M28F101 PDIP32 PLCC32 TSOP32
Text: M28F101 1 Mb 128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max
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Original
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M28F101
PLCC32
PDIP32
TSOP32
M28F101
AI00668
plcc32 pinout
PDIP32
PLCC32
TSOP32
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PDF
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Untitled
Abstract: No abstract text available
Text: LT3582/LT3582-5/LT3582-12 Boost and Single Inductor Inverting DC/DC Converters with Optional I2C Programing and OTP DESCRIPTION FEATURES n n n n n n n n n n Output Voltages: 3.2V to 12.775V and –1.2V to –13.95V LT3582 5V and –5V (LT3582-5) 12V and –12V (LT3582-12)
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LT3582/LT3582-5/LT3582-12
LT3582)
LT3582-5)
LT3582-12)
350mA
600mA
LT1618
LT1946/LT1946A
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PDF
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RFID reader source code
Abstract: 125KhZ RFID READER ATAN0019 ISO-11785 ATA5505-EK1 ATA5575 atmel jtag ice mkII ATA5577 ISO11784 crc ATA5505
Text: APPLICATION NOTE User Guide for ATA5505-EK1 Atmel ATAN0019 Features ● Evaluation Kit content and setup ● Quick Start Guide ● PC GUI Application instruction ● Programing Guide ● Troubleshooting Guide Description The Atmel ATA5505-EK1 evaluation kit provides a fast and easy way to explore Atmel’s
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Original
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ATA5505-EK1
ATAN0019
ATA5505-EK1
125kHz
RFID reader source code
125KhZ RFID READER
ATAN0019
ISO-11785
ATA5575
atmel jtag ice mkII
ATA5577
ISO11784 crc
ATA5505
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PDF
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M28F512
Abstract: PDIP32 PLCC32 1N914 m28f512-25
Text: M28F512 512 Kbit 64Kb x8, Bulk Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES
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Original
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M28F512
PLCC32
PDIP32
M28F512
PDIP32
PLCC32
1N914
m28f512-25
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PDF
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M28F101
Abstract: PDIP32 PLCC32 TSOP32
Text: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE
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M28F101
PLCC32
PDIP32
TSOP32
M28F101
PDIP32
PLCC32
TSOP32
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PDF
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CQFP 52 lead
Abstract: footprint cqfp 68 ACT-F4M32A
Text: ACT–F4M32A High Speed 128 Megabit Sector Erase FLASH Multichip Module Advanced CIRCUIT TECHNOLOGY Features www.aeroflex.com/act1.htm • 8 Low Voltage/Power AMD 2M x 8 FLASH Die in One MCM Package ■ Overall Configuration is 4M x 32 ■ +5V Power Supply / +5V Programing Operation
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F4M32A
MIL-STD-883
SCD3866
CQFP 52 lead
footprint cqfp 68
ACT-F4M32A
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PDF
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M28F101
Abstract: PDIP32 PLCC32 TSOP32 SRAM 10ns
Text: M28F101 1 Mb 128K x 8, Chip Erase FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES
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Original
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M28F101
M28F101
PDIP32
PLCC32
TSOP32
SRAM 10ns
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PDF
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M28F512
Abstract: PDIP32 PLCC32
Text: M28F512 512 Kbit 64Kb x8, Bulk Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical
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Original
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M28F512
PLCC32
PDIP32
M28F512
100ns
120ns
150ns
200ns
AI00549
PDIP32
PLCC32
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PDF
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Untitled
Abstract: No abstract text available
Text: ÛEROFLEX Cl HCJTTECHNOLOGY Features • 4 Low Power 512K x 8 FLASH Die in One MCM Package ■ TTL Compatible Inputs and CMOS Outputs ■ Access Times of 70, 90, 120 and 150nS ■ +5V Programing, 5V ±10% Supply ■ 100,000 Erase/Program Cycles ■ Low Power CMOS, Standby Current 1 mA
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OCR Scan
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F512K32-E
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PDF
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2SF256
Abstract: M28F256A
Text: rz7 SCS-THOMSON M28F256A CMOS 256K 32K x 8 FLASH MEMORY * FAST ACCESS TIME: 100ns • LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10jas (PRESTO F ALGORITHM)
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OCR Scan
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M28F256A
100ns
10jas
M28F256A
PDIP32
PLCC32
2SF256
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PDF
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28F101
Abstract: 013d01 M28F101
Text: / = T SCS-THOMSON ^ 7 # ll ra®[l[L[iOT®R!lD i M28F101 1 Mb (128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ ■ ■ ■ ■ ■ - 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10|iS typical
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OCR Scan
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M28F101
PDIP32
PLCC32
M28F101
ar28F101
PDIP32
PLCC32
28F101
013d01
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PDF
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Untitled
Abstract: No abstract text available
Text: / = T SGS-THOMSON M28F256 ^ 7 # » M g [* 0 J « ô [* S 256K (32K x 8, Bulk Erase) FLASH MEMORY DATA BRIEFING • ■ ■ • ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10us typical ELECTRICAL CHIP ERASE in 1s RANGE
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OCR Scan
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M28F256
PDIP32
PLCC32
M28F256
PDIP32
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PDF
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M28F512
Abstract: No abstract text available
Text: rZ 7 SCS-THOMSON M28F512 512K 64K x 8, Bulk Erase FLASH MEMORY DATA B RIEFING • ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10ns typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION
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OCR Scan
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M28F512
PDIP32
PLCC32
M28F512
100ns
120ns
150ns
200ns
I00549
PDIP32
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PDF
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Untitled
Abstract: No abstract text available
Text: —N ugent Header Programing HPS Series • 2-position programing shunt accepts .025" square post • Dual beam contact, .100" x .100" center-tocenter • Low cost system for bussing, programing and switch replacement • Center test probe for electrical inspection
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OCR Scan
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PS-02)
HPS-02-G
HPS-01-G
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PDF
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cerberus uc 90q
Abstract: cerberus PIC1650-536 Autodialer ER1400 UC90Q ES4265 autodialer sms clare relay cup earom
Text: G tN tR A L 1NSI RUMENT PIC1650-536 TELEVIEW Autodialer/Terminal Identifier FEATURES N on-volatile storage of 4 telephone num bers of 16 d igits 10 ips loop disconnect dialing Non-volatile storage of Identity Code of 16 digits Full remote programing capability
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OCR Scan
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PIC1650-536
PIC1650-536
-900ms
10//f
1N4001
N4001
250mA
ES4265
cerberus uc 90q
cerberus
Autodialer
ER1400
UC90Q
autodialer sms
clare relay cup
earom
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PDF
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SPR016
Abstract: SP0256
Text: .IN I RAI INSIRUMI IVI SPR016 16,384 Bit Serial Read Only Memory READ ONLY MEMORY FEATURES • ■ ■ ■ ■ 2048 x 8 Bit ROM Organization Serial In/Parallel Out Shift Register Single Supply Voltage +5V Interfaced to SP0256 Totally Automatic Custom Programing
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OCR Scan
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SPR016
SP02S6
SPR016
SP0256
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PDF
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Untitled
Abstract: No abstract text available
Text: 128KX8 NON-VOLATILE RAM M s iR u m m u R • • • • • • GR12882 Plug-in replacement for Static RAM 20 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles GR12882 is 128 kilobyte of non-volatile memory which is pin-compatible with normal Static RAM and offers immediate conversion to
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OCR Scan
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128KX8
GR12882
GR12882
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PDF
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ram 8416
Abstract: No abstract text available
Text: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout
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OCR Scan
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GR281-4
24-pin
GR281
PD446
ram 8416
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PDF
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SMD A1S
Abstract: ACT-F512K8
Text: i * “ / * \ * Ï V “* 1' “ S" w?-1 % , H.| m » . 1 M— • u i u ÛEROFLEX CIRCUIT TECHNOLOGY Features • Low Power Monolithic 512K x 8 FLASH ■ TTL Compatible Inputs and CMOS Outputs ■ Access Times of 90,120 and 150nS ■ +5V Programing, 5V ±10% Supply
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OCR Scan
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150nS
MIL-PRF-38534
MIL-STD-883
32PinDIP
F512K8-A
D04715b
SMD A1S
ACT-F512K8
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PDF
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5962-9461202H
Abstract: ACT-F512K32N-070P7Q MCM NAND ACT-F512K32 5962-9461203HXX act-f512k32n-070P7
Text: £ L 2 K 3 2 -I4 j|g h •i j. ir—• I n A s ^i o i P eed . I j.ï ÛEROFLEX CIRCUIT TECHNOLOGY Features ■ 4 Low Power 512K x 8 FLASH Die in One MCM Package ■ TTL Compatible inputs and CMOS Outputs ■ Access Times of 70, 90, 120 and 150nS ■ +5V Programing, 5V ±10% Supply
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OCR Scan
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150nS
MIL-PRF-38534
-55CC
MIL-STD-883
F512K32-D
4715b
0DDD532
5962-9461202H
ACT-F512K32N-070P7Q
MCM NAND
ACT-F512K32
5962-9461203HXX
act-f512k32n-070P7
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PDF
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M28F101
Abstract: PDIP32 PLCC32 TSOP32 0625E-1
Text: SGS-TtiOMSON M28F101 G fflD S Î3 (m i(g T ïïM M (g i 1 Megabit (128K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10^is
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OCR Scan
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M28F101
PDIP32
PLCC32
TSOP32
M28F101
TSOP32
PDIP32
PLCC32
0625E-1
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PDF
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Untitled
Abstract: No abstract text available
Text: £yjSGS-THOMSON DWIllLI DW!lll©i M28F101 1 Mb 128K x 8, Chip Erase FLASH MEMORY • 5V ±10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMING TIME: 1Ojas typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION
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OCR Scan
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M28F101
PDIP32
PLCC32
TSOP32
M28F101
TSOP32
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PDF
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