A7 SMD TRANSISTOR
Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is
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HS-6664RH
HS-6664RH
HS6664R
A7 SMD TRANSISTOR
SMD A8 Transistor
smd transistor A8
smd transistor A11
SMD Transistor A12
smd transistor a9
A12 SMD TRANSISTOR
smd transistor A7
smd transistor A6
SMD a7 Transistor
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C2665
Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)
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CY7C266
CY7C266
600-mil-wide
C2665
C2668
7c26
C2662
C266
27C64
R1250
C2666
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TTE24C
Abstract: No abstract text available
Text: 64K-bit/32K-bit 2-Wire Serial CMOS EEPROM TTE24C32/TTE24C64 Preliminary Description The TTE24C32/TTE24C64 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C32/TTE24C64 contains a memory array of 32K-bits 4Kx8 and 64K-bits (8Kx8) repectively, and
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64K-bit/32K-bit
TTE24C32/TTE24C64
TTE24C32/TTE24C64
32K-bits
64K-bits
TE24C32/TTE24C64
TTE24C
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Untitled
Abstract: No abstract text available
Text: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet September 2000 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for
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UT28F64
28-pin
100-mil
28-lead
50-mil
100mA
28F64)
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8Kx8 28F64
Abstract: No abstract text available
Text: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet April 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for availability
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UT28F64
100mA
MIL-STD-883,
0E-11
28F64)
8Kx8 28F64
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27C64
Abstract: CY7C266 R1250 direct replacement
Text: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) The CY7C266 is a high-performance 8192 word by 8 bit
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CY7C266
CY7C266
600-mil-wide
27C64
R1250
direct replacement
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Untitled
Abstract: No abstract text available
Text: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Data Sheet April 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for availability
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UT28F64LV
MIL-STD-883,
0E-11
28F64LV)
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Untitled
Abstract: No abstract text available
Text: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 35ns and 45ns maximum address access time -55 oC to
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UT28F64
MIL-STD-883,
0E-11
28F64)
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Untitled
Abstract: No abstract text available
Text: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 55ns maximum address access time -55 oC to +125 oC
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UT28F64LV
28-pin
100-mil
28-lead
50-mil
MIL-STD-883,
28F64LV)
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8Kx8 28F64
Abstract: RADHA
Text: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 35ns and 45ns maximum address access time -55 oC to
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UT28F64
MIL-STD-883,
0E-11
8Kx8 28F64
RADHA
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Untitled
Abstract: No abstract text available
Text: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 55ns maximum address access time -55 oC to +125 oC
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UT28F64LV
28-pin
100-mil
28-lead
50-mil
MIL-STD-883,
28F64LV)
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PDF
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8Kx8 28F64
Abstract: No abstract text available
Text: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet Dec. 1997 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for
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UT28F64
100mA
MIL-STD-883,
64KPROM-3-12-97
8Kx8 28F64
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MARKING A5
Abstract: No abstract text available
Text: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Advanced Data Sheet March 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for
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UT28F64LV
MIL-STD-883,
0E-11
28F64LV)
MARKING A5
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PDF
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8Kx8 28F64
Abstract: No abstract text available
Text: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet December 1998 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for
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UT28F64
100mA
MIL-STD-883,
64KPROM-4-12-98
8Kx8 28F64
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8Kx8 28F64
Abstract: No abstract text available
Text: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 35ns and 45ns maximum address access time -55 oC to
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UT28F64
100mA
MIL-STD-883,
0E-11
28F64)
8Kx8 28F64
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8Kx8 28F64
Abstract: 28F64-35
Text: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 35ns and 45ns maximum address access time -55 oC to
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UT28F64
MIL-STD-883,
0E-11
28F64)
8Kx8 28F64
28F64-35
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Untitled
Abstract: No abstract text available
Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically
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CY7C266
27C64
CY7C266
600-mil-wide
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Untitled
Abstract: No abstract text available
Text: CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged
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CY7C266
CY7C266
600-mil-wide
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C266
Abstract: P15 Package 27C64 CY7C266 R1250 8kx8 eprom pin diagram
Text: ,.V.Ï .Ï .V.^ y nr' Æ CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Functional Description Features • CMOS fo r optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically
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CY7C266
27C64
CY7C266
600-mil-wide
C266
P15 Package
R1250
8kx8 eprom pin diagram
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27C64
Abstract: CY7C266 R1250 LP 06 A4 A1 AA
Text: ,.V.Ï.Ï.V.^ y nr' Æ CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Functional Description Features • CMOS fo r optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically
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CY7C266
27C64
600-mil-wide
R1250
LP 06 A4 A1 AA
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Z80A CPU
Abstract: Z80A-CTC z80a-PIO 2316E 4027 ram Z80A Z80A-CPU z80 pio Z80 RAM 1024x1 static ram
Text: MOS INTEGRATED CIRCUITS continued POWER TEMP. RANGE (°C) RAM 1024x1 bit static 2 5 - 0.25 2.2 2.2 33 - 0-70 D IP K, M M 2316E •ROM 2Kx8 bit 2 5 - 0.45 2.2 2.2 40 - 0-70 DIP R, U M 2704 PROM 512x8 bit 5 5 12 0.45 2.2 2.2 - - 0-70 D IP J M 2708 PROM 1Kx8 bit
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1024x1
2316E
512x8
4096x1
Z80/Z80A
Z80A CPU
Z80A-CTC
z80a-PIO
2316E
4027 ram
Z80A
Z80A-CPU
z80 pio
Z80 RAM
1024x1 static ram
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Untitled
Abstract: No abstract text available
Text: JUNE 1990 IPILES SE Y SEMICONDUCTORS PRELIMINARY INFORMATION PNC10C68 CMOS/SNOS nvSRAM HIGH PERFORMANCE 8Kx8 NON-VOLATILE STATIC RAM Supersedes M ay 1990 edition The PNC10C68 is a fast static RAM (25, 30, 35 and 45 ns), with a non-volatile electrically-erasable PROM
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PNC10C68
PNC10C68
PS2385
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United Technologies Microelectronics
Abstract: No abstract text available
Text: Military Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet W IUNITED TECHNOLOGIES MICROELECTRONICS ICENTER June 1996 FEATURES □ Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer
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UT28F64
100mA
500jiA
MIL-STD-883,
8KPROM-2-6-96
United Technologies Microelectronics
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INTEL 2764A
Abstract: 2764a-2 i2764a 2764 memory chip 2764A2 2764A1 Z8051
Text: in t e i 2764A ADVANCED 64K 8Kx8 UV ERASABLE PROM - 200 nsec StandardAccess Time — HMOS H*-E Technology ' • Low Power - 6 0 mA Maximum Active " intel‘9ent Identifier Mode — Automated Programming Operations — 20 mA Maximum Standby in d ig e n t Programming™ Algorithm
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536-bit
INTEL 2764A
2764a-2
i2764a
2764 memory chip
2764A2
2764A1
Z8051
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