MF202
Abstract: Si3N4 AuSn eutectic eftec 45 SC-101 silicon carbide MgO Al2O3 Thermal conductivity coefficient properties fe -80 ni
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES PROPERTIES OF PACKAGE MATERIALS 7. PROPERTIES OF PACKAGE MATERIALS Principal package material characteristics are shown in the following tables. Table 1 Case Material Characteristics Material Almina Alminum nitride Type Name
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SC-101
42Alloy
MF202
Si3N4
AuSn eutectic
eftec 45
SC-101
silicon carbide
MgO Al2O3 Thermal conductivity coefficient
properties fe -80 ni
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Untitled
Abstract: No abstract text available
Text: 重要なお知らせ NOTICE OF DISCLAIMER 重要なお知らせ ●本解説書に記載された情報の使用に際して弊社もしくは第三 者の特許権、著作権、 その他知的所有権などの権利に対する保 証または実施権の許諾を行うものではありません。また、本解説
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Coffin-Manson Equation
Abstract: s-n curve igbt thermal characterization and simulation using ansys Coffin-Manson exponent copper bond wire
Text: Prediction of high cycle fatigue in aluminum bond wires: A physics of failure approach combining experiments and multi-physics simulations Jeroen Bielen, Jan-Joris Gommans, Frank Theunis Philips Semiconductors –Innovation Centre for RF Gerstweg 2, 6534AE Nijmegen, The Netherlands
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6534AE
Coffin-Manson Equation
s-n curve
igbt thermal characterization and simulation using ansys
Coffin-Manson exponent
copper bond wire
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permendur
Abstract: supermendur FERRITE core TRANSFORMER 300 watt inverter magnetic amplifier saturable core ferrite core transformer construction ferrite core transformer INVERTER TRANSFORMERS design toroid iron power core reference table SMALL high frequency transformer TUBE Light Choke Coil Winding
Text: Soft Magnetics Application Guide p. 30.1 March 2000 GROUP ARNOLD Table of Contents Introduction . 30.3 Basics of Magnetics . 30.4 – 30.11 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. Energy. 30.4
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BS1474
Abstract: DIN 53479 BS1449 BS4235 BS2870 BS1400 bs46 DIN 53455 53455 53482
Text: Issued March 1997 232-3614 Data Pack G Engineering materials Data Sheet This data sheet is intended as a guide for users of engineering materials and will be useful for selection of the correct material for various applications. Plastic Stock Acetal Polyethylene
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24hrs
240psi
BS1474
DIN 53479
BS1449
BS4235
BS2870
BS1400
bs46
DIN 53455
53455
53482
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PGA68
Abstract: clcc44 SO53 material declaration semiconductor package FDIP28 schottky diode sb 5400 CLCC68 CLCC52 smd transistor marking 7622 DIP40 weight
Text: CHEMICAL CONTENT OF SEMICONDUCTOR PACKAGING SEPTEMBER 1998 Corp. Environment Strategies Corp. Package Development USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
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GS-150T
102x51x19
GS-100T
GS-R1005
PGA68
clcc44
SO53
material declaration semiconductor package
FDIP28
schottky diode sb 5400
CLCC68
CLCC52
smd transistor marking 7622
DIP40 weight
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brass properties
Abstract: F8007 MCM 2128 BU 2735 AS F2034 resistivity wire nichrome UL486E table 14.1 F4020 UL486E ACS 0865
Text: NEMA Terminal Blocks Technical Summary TERMINAL BLOCK OR PRODUCT LINE CONTACT TYPE MATERIAL PLATE SCREW STYLE High Density Tubular Clamp Electroplated Tubular Copper Contact 6-32 Slotted Head Screw 033” Wide x .040” Deep Steel Steel Electroplated .020”
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105-BU
UL486E
UL1059
brass properties
F8007
MCM 2128
BU 2735 AS
F2034
resistivity wire nichrome
UL486E table 14.1
F4020
ACS 0865
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ETD 49 ferrite core
Abstract: toroid cores numbers table ferrite pot core curie temperature etd 49 core MT4600
Text: Section 1. What are Ferrites? Ferrites are dense, homogeneous ceramic structures made by mixing iron oxide Fe 2 O 3 with oxides or carbonates of one or more metals such as manganese, zinc, nickel, or magnesium. They are pressed, then fired in a kiln at 2000°F, and machined as needed
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FF02B35SS1
Abstract: LR38825 LQ022B8UD05 LH169CH sharp lr38825 LQ022B8UD05D LCD 2.2" QCIF 35 pins SHARP LCD lot code touch lcd
Text: Technical Document LCD Specification LCD Group LQ022B8UD05 LCD Module Product Specification December 2009 QCIF+ LCD Module featuring 125 nits brightness with 60:1 contrast. Full specification listing. RECORDS OF REVISION REF.PAGE PARAGRAPH DRAWING No. DOC. First issue
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LQ022B8UD05
LCP-05032F
LQ022B8UD05ALQ022B8UD05B
FF02B35SS1
LR38825
LH169CH
sharp lr38825
LQ022B8UD05D
LCD 2.2" QCIF 35 pins
SHARP LCD lot code
touch lcd
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APD InGaAs array
Abstract: n3482 receiver L16.2 10G APD STM-4 STM16 STM-16 2-80km electro absorption modulator 10G transceiver DFB APD 155
Text: Fibre. Op. Brochure 28.10.1998 14:12 Uhr Page F2 N ov e mb e r Fibreoptic c o m p o n e n t s 0 5 - 0 1 8 1 9 9 8 Fibre. Op. Brochure 28.10.1998 14:13 Uhr Page 1 INDEX 1000k Telecom Fibreoptic Components 100k 10k 1k Data Com STM1/STM4 Transciever Modules STM16 Optical
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12-Channel
H-1088
E-08028
F-78140
APD InGaAs array
n3482
receiver L16.2
10G APD
STM-4
STM16
STM-16
2-80km
electro absorption modulator 10G
transceiver DFB APD 155
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BPW21R
Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al
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matlab capacitive pressure sensor
Abstract: blood pressure measurement digital circuit MEMS pressure sensor MATLAB laser simulation Matlab ring laser gyroscope "capacitive pressure sensor" Six Degrees of Freedom Inertial Sensor blood pressure circuit schematic cantilever for AFM ups shematic
Text: Mechanical characterization and simulation of fracture processes in polysilicon Micro Electro Mechanical Systems MEMS Tesi da presentare per il conseguimento del titolo di Dottore di Ricerca Politecnico di Milano Dipartimento di Ingegneria Strutturale Dottorato in Ingegneria Strutturale, Sismica e Geotecnica - XIX Ciclo
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Superior performance Co-Ni Alloy Product (SPRON)
Abstract: SPRON100 SPRON510 Factory Environmental Activities Glossary SUS316L corrosion
Text: Superior performance Co-Ni Alloy Product SPRON Product Catalogue 2014 Superior Superior performance performance Co-Ni Co-Ni Alloy Alloy Product Product (SPRON) (SPRON) solves designers’ problems " " is a special metal (Co-Ni alloy) developed for mechanical watch
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SPRON100
SPC3009EJ-01C1402
Superior performance Co-Ni Alloy Product (SPRON)
SPRON100
SPRON510
Factory
Environmental Activities
Glossary
SUS316L corrosion
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D2012
Abstract: DEL11
Text: 80.0 MHz SAW Filter Part Number 242005B 1. Features Typical 1dB bandwidth of 19.9 MHz High attenuation Single Ended Operation Dual In-line Package DIP 2. Electrical Specifications Source and Load Impedance = 50Ω Operating Temperature : +25℃ ℃ Minimum
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242005B
D2012
DEL11
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inverter welder schematic
Abstract: permendur Arnold Magnetics inverter welder 4 schematic magnetic amplifier saturable core supermalloy bh curve TUBE Light Choke Coil Winding step down welding transformer 12 inverter welder schematic 1 phase arc welder schematic
Text: Soft Magnetics Application Guide p. 30.1 March 2000 GROUP ARNOLD Table of Contents Introduction . 30.3 Basics of Magnetics . 30.4 – 30.11 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. Energy. 30.4
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45GHZ
Abstract: No abstract text available
Text: P/NI A C H 2 -A T -D P O 04 L inch Electrical Properties: Frequency Range: Impedance: VSWR: Gain: Radiation: Polarization: 2 .4 ~ 2 .5 GHz 50Q nom inal <2.0:1 *5 .0 dBi Omni Vertical ♦Gain is m easured under without flying lead. Mechanical Properties: Cable:
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-AT-DP004
45GHz
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MT 2800 N
Abstract: Siemens Ferrite n72 ferrite Ring Core matsua etd 49 core
Text: SIFERRIT Materials Material properties Resonant circuit inductors Preferred application Material uT7T r ' K I2 1' K1 M il <10 Base material NiZn NiZn NiZn NiZn NiZn MnZn grey yellow violet brown — white 250 ±20% 600 750 Symbol j Unit Color code Initial permeability
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100-C)
MT 2800 N
Siemens Ferrite n72
ferrite Ring Core matsua
etd 49 core
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2N2937
Abstract: 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484
Text: RAYTHEON/ "ä ? SEMICONDUCTOR 7597360 D eT | 7 5 ^ 7 3 ^ 0 G G D B S a S Ì 27C RAYTHEON CO» D Low Level, Low Noise, High Gain Amplifiers RAYTHEON CL 0353 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS NPN Popular Types Description General purpose am plifier for low
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2N930/JAN
2N2484/JAN
2N3117
2N930JAN
2N2484JAN
54BSC
27BSC
100BSC
050BSC
-100BSC
2N2937
27c03
sp2639
2n760A Jan
2N2453
2N2903A
2N757
2N759AJ
2n2915 203
2n2484
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S151
Abstract: No abstract text available
Text: P /A S151AM—2450R Alternative Connectors .SMA R e verse P o la rity P lu g fe m a le P /N : S151 AH—2450R .SMA R e verse T h re a d d P lu g (M a le ) P /N : S151AT—2450R 90 wn E-Plane Pattern @ 2.45GHz 0 0 .2 3 (6 .0 )- o 260 270 280 90 80 H-Plane Pattern @ 2.45GHz
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2450R
45GHz
S151
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2n3499
Abstract: No abstract text available
Text: RAYTHEON/ SEM ICO ND UC TO R T4 CC □□□5551 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS RAYTHEON. DËÏ7ST73bD High Voltage General Purpose Amplifiers and Switches NPN Description Popular Types General purpose am plifier and switch for high voltage applications. The
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7ST73bD
2N3501/JAN
2N3500/JAN
2N3499/JAN
2N3498/JAN
2N3440
Min00
508BSC
100BSC
200BSC
2n3499
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Radiall
Abstract: Radiall r
Text: N O T I C E HépiaF&inçflt COAXIAL 1 0 1 . Rue Philibert Hofïmann Zone industriale Öüest 9 3 1 1 6 - RÔ ^flYSO U S-BO IS Téléphone : 8 6 4 .80 -4 0 T E C H N I Q U E T E C H N i C A L D A T A m u 280 284 PASSE -DIELEC; C.I. A SERT Je A BLE RECEPTACLE,CftlNP TVP
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M22520/5-01)
M22520/5-03!
M2252O/5-03)
Radiall
Radiall r
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Untitled
Abstract: No abstract text available
Text: i ü RADIALL jugée m o d ific a tio n le d ro it d 'a p p o rte r toute „us nous réservons DATA T IT L E T IT R E RACCORD FF R 616 705 Adaptator FF straight HN 2 Série N O R M A LISA TIO N . SPECIFICATIONS IEC C3655 mm r.F c r: CABLES CABLES PROPERTIES
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C3655
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d 5071 transistor
Abstract: b0507 BD509 BD50 transistor transistor bd509 SC 5071 BD5a BD50 bd 609 transistor BD507
Text: W tW Ö l T ~ S C ^ C X S T R S /R 6367254 » T | b 3 b 7 a s 4 F3- MOTOROLA SÇ_ XST_RS/R F>. 96D 8 0 5 9 9 o o f l ü s n D T -J J - 07 MOTOROLA •a SEM ICO ND U C TO R TECHNICAL DATA N P N S IL IC O N A U D IO T R A N S I S T O R S N P N S IL IC O N A N N U LA R *
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BD506,
BD508.
BD510
BD505.
BD505-1.
d 5071 transistor
b0507
BD509
BD50 transistor
transistor bd509
SC 5071
BD5a
BD50
bd 609 transistor
BD507
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T718N
Abstract: T719N k005f
Text: öl T718N T719N Typenreihe/Type ränge T718N T719N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drm. U rrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung DE | ODETMHti O O D t l ^ 400* 600 Itrmsm Itavh Effektiver Durchlaßstrom
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T718N
T719N
T719N
125cC
19/Detail
k005f
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