Untitled
Abstract: No abstract text available
Text: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution
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PS1101RA
880nm
000pcs
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Untitled
Abstract: No abstract text available
Text: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution
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PS1101RA
880nm
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Untitled
Abstract: No abstract text available
Text: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution
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PS1101RA
880nm
000pcs
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Phototransistor reverse
Abstract: No abstract text available
Text: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution
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PDF
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PS1101RA
880nm
000pcs
Phototransistor reverse
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PS1101RA
Abstract: No abstract text available
Text: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution
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Original
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PDF
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PS1101RA
880nm
000pcs
PS1101RA
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Untitled
Abstract: No abstract text available
Text: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution
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Original
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PS1101RA
880nm
000pcs
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Phototransistor reverse
Abstract: No abstract text available
Text: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution
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PS1101RA
880nm
000pcs
Phototransistor reverse
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TRANSISTOR DNH
Abstract: PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector
Text: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number
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30MIN.
15MIN.
17MIN.
14MIN.
TRANSISTOR DNH
PS5022
PS1191RA
PP1101W
PS1101RA
PS1101WA
PS1102HA
PS1192FA
PS1192HA
peak spectral response 900 nm photo detector
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Stanley PS5022
Abstract: DIODE PP602 KU163A PP701 DNP318U-4 DNP331 PP602 DNP1105W DNP319 PS5022
Text: OPTICAL SENSOR Super intensity infrared LEDs and photo detectors are used in these photo sensors. Stanley offers high quality and reliability in all of its sensors for use in optical disks, office automation equipment and optical connectors for surface mount devices.
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KU166
10/F-2,
IRLED0701
Stanley PS5022
DIODE PP602
KU163A
PP701
DNP318U-4
DNP331
PP602
DNP1105W
DNP319
PS5022
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DNP1105W
Abstract: pcb warpage DNP1102F PS1191RA LED Tr 1105W AN1101W AN1102F ps1101wa AN1105W
Text: SMT SHAPE - INFRARED LED n Infrared LED Shape Part No. Ta=25°C Features Peak Wavelength lP TYP. IF Radiant Intensity IE MIN. TYP. IF Output Power Po Cut-Off Frequency Fc TYP. MIN. TYP. IF Spatial Distribution The typical distribution example of each shape is shown below
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DNP1101W
AN1101W
DNP1102W
1102HA-1192HA
1192FA
105W-RR
DNP1105W
pcb warpage
DNP1102F
PS1191RA
LED Tr
1105W
AN1101W
AN1102F
ps1101wa
AN1105W
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DIODE PP602
Abstract: pp602 PP701 pp601 40 PP601 PP1101W PS1101RA PS1101WA PS1102HA PS1191RA
Text: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number
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Untitled
Abstract: No abstract text available
Text: •PHOTO TRANSISTOR ▼CHARACTERISTICS BY MATERIAL Part No. » PS § tn f e T 502 A bsolute M axim um R atings CafecferfìM* Emifw-Cotectx Collector Operating j ' i i w p i l ; ' Bregfcbown Breakdown Current Temp. Vottage Dissipation Vöfegs Pd 60 100 Storage
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OCR Scan
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PDF
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PS1102H
PS1192H
PS1101R
PS1191R
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