PSMN165-200K |
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NXP Semiconductors
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PSMN165-200K - N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 2.9 A; Qgd (typ): 12 nC; RDS(on): 165@10V mOhm; VDSmax: 200 V |
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PSMN165-200K |
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Philips Semiconductors
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N-channel enhancement mode field-effect transistor |
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PSMN165-200K,118 |
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NXP Semiconductors
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PSMN165-200K - N-channel TrenchMOS SiliconMAX standard level FET, SOT96-1 Package, Standard Marking, Reel Pack, SMD, 13" |
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PSMN165-200K,518 |
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NXP Semiconductors
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N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 2.9 A; Qgd (typ): 12 nC; RDS(on): 165@10V mOhm; VDSmax: 200 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13" |
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PSMN165-200K,518 |
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NXP Semiconductors
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PSMN165-200 - TRANSISTOR 2900 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Small Signal |
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PSMN165-200K518 |
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NXP Semiconductors
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SMALL SIGNAL N-CHANNEL MOSFET |
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PSMN165-200K/T3 |
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NXP Semiconductors
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N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 2.9 A; Qgd (typ): 12 nC; RDS(on): 165@10V mOhm; VDSmax: 200 V |
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Original |
PDF
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