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    PTF 101 Price and Stock

    TE Connectivity PTFC101B1A0

    Industrial Temperature Sensors PT100,2.0X2.3,B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTFC101B1A0 10,437
    • 1 $2.65
    • 10 $2.08
    • 100 $1.92
    • 1000 $1.48
    • 10000 $1.27
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    TE Connectivity PTFC101A1G0

    Industrial Temperature Sensors PTC Thermistors Sensotherm MFG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTFC101A1G0 8,091
    • 1 $4.45
    • 10 $3.34
    • 100 $2.71
    • 1000 $2.1
    • 10000 $2.05
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    TE Connectivity PTFC101B1G0

    Industrial Temperature Sensors PTC Thermistors B 101B1G0:PT100 2X2.3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTFC101B1G0 6,636
    • 1 $3.02
    • 10 $2.27
    • 100 $1.85
    • 1000 $1.44
    • 10000 $1.35
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    TE Connectivity PTFC101T1A0

    Industrial Temperature Sensors PT100,2.0X2.3,T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTFC101T1A0 6,464
    • 1 $6.35
    • 10 $4.77
    • 100 $3.88
    • 1000 $3.04
    • 10000 $2.93
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    TE Connectivity PTFD101B1A0

    Industrial Temperature Sensors PT100,2.0X5.0,B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PTFD101B1A0 5,886
    • 1 $3.16
    • 10 $2.97
    • 100 $2.61
    • 1000 $2.28
    • 10000 $2
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    PTF 101 Datasheets (67)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTF10100 Ericsson Components 165 Watts, 860-900 MHz LDMOS Field Effect Transistor Original PDF
    PTF 10100 Ericsson Components FET, Enhancement, N Channel, 4.3 VThreshold Original PDF
    PTF10107 Ericsson GOLDMOS Field Effect Transistor 5 Watts, 2.0 GHz Original PDF
    PTF10107 Ericsson Components 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Original PDF
    PTF 10107 Ericsson Components FET, Gold MOSFET Transistor, 3 VThreshold Original PDF
    PTF10111 Ericsson GOLDMOS Field Effect Transistor 6 Watts, 1.5 GHz Original PDF
    PTF10111 Ericsson Components 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor Original PDF
    PTF 10111 Ericsson Components FET, Gold MOSFET Transistor, 3 VThreshold Original PDF
    PTF10112 Ericsson 60 Watts, 1.8-2.0 GHz LDMOS Field Effect Transistor Original PDF
    PTF10112 Ericsson Components 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor Original PDF
    PTF 10112 Ericsson Components FET, Enhancement, N Channel, 3 VThreshold Original PDF
    PTF10119 Advanced Semiconductor Transistor Original PDF
    PTF10119 Ericsson GOLDMOS Field Effect Transistor 12 Watts, 2.1-2.2 GHz Original PDF
    PTF10119 Ericsson Components 12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor Original PDF
    PTF 10119 Ericsson Components FET, Enhancement, N Channel, 3 VThreshold Original PDF
    PTF10120 Ericsson 120 Watts, 1.8-2.0 GHz LDMOS Field Effect Transistor Original PDF
    PTF10120 Ericsson Components 120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor Original PDF
    PTF 10120 Ericsson Components FET, Enhancement, N Channel, 3 VThreshold Original PDF
    PTF10122 Ericsson Components 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor Original PDF
    PTF 10122 Ericsson Components FET, Enhancement, N Channel, 3 VThreshold Original PDF

    PTF 101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G200

    Abstract: No abstract text available
    Text: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is an internally matched 12–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB gain. Nitride surface passivation


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF G200

    Untitled

    Abstract: No abstract text available
    Text: PTF 10119 12 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output.


    Original     		PDF 1-877-GOLDMOS 1301-PTF

    OZ 960 S

    Abstract: 10149 OZ 960 G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM gsm amplifier
    Text: PTF 10149 70 Watts, 921–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10149 is an internally matched 70–watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. It operates with 50% efficiency and 16 dB typical gain.


    Original     		PDF P5182-ND P4525-ND 1-877-GOLDMOS 1522-PTF OZ 960 S 10149 OZ 960 G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM gsm amplifier

    G200

    Abstract: K1206 k1206 220 r3
    Text: PTF 10135 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface


    Original     		PDF K1206 1-877-GOLDMOS 1301-PTF G200 K1206 k1206 220 r3

    capacitor 100uF 50V

    Abstract: resistor 220 ohm resistor qbk PTF 10154 capacitor 10uf DIGIKEY
    Text: PTF 10154 85 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surface


    Original     		PDF 0805CS-080 1-877-GOLDMOS 1522-PTF capacitor 100uF 50V resistor 220 ohm resistor qbk PTF 10154 capacitor 10uf DIGIKEY

    Untitled

    Abstract: No abstract text available
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and


    Original     		PDF P4525-ND P5782-ND 1-877-GOLDMOS 1301-PTF

    500 watts amplifier schematic diagram

    Abstract: G200 gsm amplifier ghz 100 watts amplifier circuit diagram E7020
    Text: GOLDMOS PTF 10138 Field Effect Transistor 60 Watts, 1.0 GHz Description The PTF 10138 is a 60–watt GOLDMOS FET intended for CDMA, TDMA, or GSM amplifier applications from 860-960 MHz. It operates at 55% efficiency with 12.5 dB gain. Nitride surface passivation and


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF 500 watts amplifier schematic diagram G200 gsm amplifier ghz 100 watts amplifier circuit diagram E7020

    G200

    Abstract: No abstract text available
    Text: PTF 10193 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10193 is an internally matched, 12–watt GOLDMOS FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This device operates at 60% efficiency with 18 dB typical


    Original     		PDF P4525-ND P5182-ND 220QBK-ND 1-877-GOLDMOS G200

    G200

    Abstract: 500 watts amplifier schematic diagram gsm amplifier Ericsson
    Text: PTF 10138 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10138 is a 60–watt GOLDMOS FET intended for CDMA, TDMA, or GSM amplifier applications from 860-960 MHz. It operates at 55% efficiency with 12.5 dB gain. Nitride surface passivation and


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF G200 500 watts amplifier schematic diagram gsm amplifier Ericsson

    capicitor

    Abstract: No abstract text available
    Text: PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride


    Original     		PDF 1877-GOLDMOS 1522-PTF capicitor

    G200

    Abstract: 10147
    Text: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF G200 10147

    capicitor

    Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
    Text: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride


    Original     		PDF 220QBK-ND 1-877-GOLDMOS 1522-PTF capicitor smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19

    JX - 638

    Abstract: No abstract text available
    Text: PTF 10138 60 Watts, 960 MHz GOLDMOS Field Effect Transistor Description The PTF 10138 is a GOLDMOS™ FET intended for amplifier applications to 960 MHz. This 60–watt device operates at 48% efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold


    Original     		PDF 1-877-GOLDMOS 1301-PTF JX - 638

    Untitled

    Abstract: No abstract text available
    Text: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF

    G200

    Abstract: resistor 220 ohm
    Text: PTF 10107 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization


    Original     		PDF P5182-ND LL2012-F2N7K 1-877-GOLDMOS 1522-PTF G200 resistor 220 ohm

    G200

    Abstract: PTF10111
    Text: GOLDMOS PTF 10111 Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization


    Original     		PDF 1-877-GOLDMOS 1522-PTF G200 PTF10111

    Untitled

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10111 Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization


    Original     		PDF 1-877-GOLDMOS 1522-PTF

    ericsson 10159

    Abstract: PTF10159 470-860 mhz Power amplifier w
    Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power


    Original     		PDF UT-85-25 1-877-GOLDMOS 1301-PTF ericsson 10159 PTF10159 470-860 mhz Power amplifier w

    2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 500 watt power circuit diagram capacitor siemens 4700 35 G200 10136
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold


    Original     		PDF 220ohm, 1-877-GOLDMOS 1522-PTF 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 500 watt power circuit diagram capacitor siemens 4700 35 G200 10136

    500 watts amplifier schematic diagram

    Abstract: OZ 960 OZ 960 S G200
    Text: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full


    Original     		PDF P4525-ND P5182-ND 220ohm, 220qbk-no 1-877-GOLDMOS 1522-PTF 500 watts amplifier schematic diagram OZ 960 OZ 960 S G200

    500 watts amplifier schematic diagram

    Abstract: NGT 03 G200
    Text: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full


    Original     		PDF 70pacitor, P5182-ND 220ohm, 220qbk-no 1-877-GOLDMOS 1522-PTF 500 watts amplifier schematic diagram NGT 03 G200

    G200

    Abstract: No abstract text available
    Text: PTF 10111 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure


    Original     		PDF 1-877-GOLDMOS 1301-PTF G200

    10134

    Abstract: capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180
    Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface


    Original     		PDF 35VDC 1-877-GOLDMOS 1522-PTF 10134 capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180

    PTF 10049

    Abstract: No abstract text available
    Text: ERICSSON ^ 3 Contents PTF 10007 . 3-41 PTF 10009. 3-71 PTE 10015. 3-45


    OCR Scan     		PDF