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    PTF08 Search Results

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    PTF08 Price and Stock

    VENKEL LTD UPTF0805-10W-N-4872BT

    RES 48.7K OHM 0.1% 1/10W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPTF0805-10W-N-4872BT Reel 5,860 5,000
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    • 10000 $0.07886
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    VENKEL LTD HPTF0805-RN-4753BT

    RES 475K OHM 0.1% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HPTF0805-RN-4753BT Reel 5,000 5,000
    • 1 -
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    • 10000 $0.07886
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    VENKEL LTD UPTF0805-10W-N-2200DT

    RES 220 OHM 0.5% 1/10W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPTF0805-10W-N-2200DT Reel 5,000 5,000
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    Component Electronics, Inc UPTF0805-10W-N-2200DT 320
    • 1 $0.77
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    • 100 $0.58
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    OMRON Industrial Automation PTF08A

    RELAY SOCKET 8 POSITION DIN RAIL
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    DigiKey PTF08A Bulk 1,758 1
    • 1 $11.4
    • 10 $9.955
    • 100 $8.6961
    • 1000 $7.59616
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    Newark PTF08A Bulk 1
    • 1 $12.66
    • 10 $12.66
    • 100 $10.52
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    Onlinecomponents.com PTF08A 132
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    • 100 $8.01
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    Interstate Connecting Components PTF08A 4
    • 1 $8.86
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    Master Electronics PTF08A 132
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    • 100 $8.01
    • 1000 $6.48
    • 10000 $6.41
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    Anytek Technology Corporation Ltd PTF08A00G

    RELAY GEN PURPOSE INDUSTRIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTF08A00G Box 997 1
    • 1 $2.93
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    • 100 $2.2336
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    • 10000 $1.77509
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    Onlinecomponents.com PTF08A00G
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    TME PTF08A00G 209 1
    • 1 $2.18
    • 10 $2.04
    • 100 $1.77
    • 1000 $1.77
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    Interstate Connecting Components PTF08A00G
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    Find more PTF08 price and stock on Findchips.com

    PTF08 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTF080101 Infineon Technologies LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ Original PDF
    PTF080101M Infineon Technologies 700 MHz to 1000 MHz; Package: PG-RFP-10; Flange Type: Surface Mount; Matching: None; Frequency Band: 450.0 - 960.0 MHz; P1dB (typ): 10.0 W; Supply Voltage: 28.0 V; Original PDF
    PTF080101M Infineon Technologies Transistor Mosfet 65V 0.18A 10TSSOP Original PDF
    PTF080101M V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 10W TSSOP-10 Original PDF
    PTF080101MV1 Infineon Technologies Transistor Mosfet N-CH 65V 0.18A 10TSSOP Original PDF
    PTF080101MV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 10W TSSOP-10 Original PDF
    PTF080101S Infineon Technologies 700 MHz to 1000 MHz; Package: PG:32259; Flange Type: Surface Mount; Matching: Input; Frequency Band: 860.0 - 960.0 MHz; P1dB (typ): 10.0 W; Supply Voltage: 28.0 V; Original PDF
    PTF080101S Infineon Technologies LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ Original PDF
    PTF080101S V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 960MHZ H-32259-2 Original PDF
    PTF080101SV1 Infineon Technologies Transistor Mosfet 65V 2(32259) Original PDF
    PTF080101SV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 10W H-32259-2 Original PDF
    PTF080451 Infineon Technologies LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz Original PDF
    PTF080451E Infineon Technologies LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz Original PDF
    PTF080601 Infineon Technologies LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Original PDF
    PTF080601A Infineon Technologies LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Original PDF
    PTF080601E Infineon Technologies LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Original PDF
    PTF080601EV1 Infineon Technologies Transistor Mosfet 65V 3(30248) Original PDF
    PTF080601F Infineon Technologies LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Original PDF
    PTF080901 Infineon Technologies LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Original PDF
    PTF080901AV1 Infineon Technologies Transistor Mosfet N-CH 65V Original PDF

    PTF08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSSOP10

    Abstract: TSSOP-10 infineon smd smd transistor infineon PTF080101M
    Text: Preliminary PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 860 – 960 MHz Description The PTF080101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the 860 to 960 MHz band. This LDMOS device operates at 50% efficiency P–1dB .


    Original     		PDF PTF080101M PTF080101M 10-watt PTF080101M* TSSOP-10 TSSOP10 TSSOP-10 infineon smd smd transistor infineon

    LM7805 smd

    Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
    Text: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF081301E PTF081301F PTF081301E PTF081301F 130-watt, LM7805 smd BCP56 LM7805 transistor SMD LOA DD 127 D TRANSISTOR

    LM7805 smd 8 pin

    Abstract: smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 PTF080101M smd transistor marking C14
    Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF080101M PTF080101M 10-watt PG-RFP-10 LM7805 smd 8 pin smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 smd transistor marking C14

    omron mya-la12

    Abstract: omron relay MK2KP omron MK2kP MYA-NA2 MYA-LA12 MK2KP Mk2kp omron RELAY MYA-NA2 mk3p omron omron MK2P
    Text: General-purpose Relays and Power Relays Sockets Relay Type Track Mount Sockets Back Connecting Sockets Solder terminals PCB terminals G2R-1-S P2RF-05 P2RF-05-E P2RF-05-S P2R-05A P2R-05P G2R-2-S P2RF-08 P2RF-08-E P2RF-08-S P2R-08A P2R-08P LY1, LY2 PTF08A-E


    Original     		PDF P2RF-05 P2RF-05-E P2RF-05-S P2R-05A P2R-05P P2RF-08 P2RF-08-E P2RF-08-S P2R-08A P2R-08P omron mya-la12 omron relay MK2KP omron MK2kP MYA-NA2 MYA-LA12 MK2KP Mk2kp omron RELAY MYA-NA2 mk3p omron omron MK2P

    PTF080601

    Abstract: PTF080601A PTF080601E PTF080601F 30248
    Text: Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description Features The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080601 PTF080601 PTF080601A PTF080601E PTF080601F 30248

    PTF082001E

    Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor
    Text: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF082001E PTF082001F PTF082001E PTF082001F 200-watt, PTF082001F* IS-95 17erous atc 1725 LM7805 smd smd transistor infineon 106T BCP56 106T capacitor

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF081301E PTF081301F PTF081301E PTF081301F 130-watt,

    smd transistor marking C14

    Abstract: transistor smd marking ds BCP56 LM7805 PTF081301E PTF081301F
    Text: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF081301E PTF081301F PTF081301E PTF081301F 130-watt, PTF081301F* smd transistor marking C14 transistor smd marking ds BCP56 LM7805

    LM7805 smd 8 pin

    Abstract: LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1
    Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF080101M PTF080101M 10-watt PG-RFP-10 LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1

    LM7805 smd

    Abstract: TRANSISTOR SMD 2X K lm7805 specification transistor smd marking ND BCP56 LM7805 PTF080101S MARKING SMD transistor R11
    Text: PTF080101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 – 960 MHz Description The PTF080101S is a 10-watt, internally-matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible.


    Original     		PDF PTF080101S PTF080101S 10-watt, LM7805 smd TRANSISTOR SMD 2X K lm7805 specification transistor smd marking ND BCP56 LM7805 MARKING SMD transistor R11

    PTF080101

    Abstract: PTF080101S
    Text: Advance Information PTF080101 LDMOS RF Power Field Effect Transistor 10 W, 860–960 MHz Description Features The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080101 PTF080101 PTF080101S

    LM7805 smd

    Abstract: LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451 PTF080451E
    Text: PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description Features The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080451 PTF080451 LM7805 smd LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451E

    LM7805

    Abstract: LM7805 smd 8 pin PTF080901 PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND
    Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080901 PTF080901 LM7805 LM7805 smd 8 pin PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND

    PTF08A-E

    Abstract: PTF08A PTF11A PTF14A-E PYC-A1 PTF14A Y92H-3 PT08-QN PT08 PT08-0
    Text: LY LY Socket–Hold-down Clip Pairings Relay type Poles Front-connecting sockets Socket model Clip model PYC-A1 Back-connecting sockets Socket model Clip model Standard, bifurcated contacts 1, 2 PTF08A-E, PTF08A PT08 QN , PT08-0 PYC-P operation indicator, built-in


    Original     		PDF PTF08A-E, PTF08A PT08-0 PTF11A PT11-0 PTF14A-E, PTF14A PT14-0 PTF08A-E PTF08A PTF11A PTF14A-E PYC-A1 PTF14A Y92H-3 PT08-QN PT08 PT08-0

    DD 127 D TRANSISTOR

    Abstract: A90W ptf080901e
    Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080901 PTF080901 DD 127 D TRANSISTOR A90W ptf080901e

    Untitled

    Abstract: No abstract text available
    Text: Product Brief PTF080601 GSM/EDGE/CDMA RF Power FET The PTF080601 Performance Optimized for EDGE and CDMA2000 applications, the PTF080601 is one of our new line of 860 MHz to 960 MHz devices. Typical EDGE performance for this device delivers 30 W average and 18 dB gain with


    Original     		PDF PTF080601 CDMA2000 PTF080601 B134-H8300-X-0-7600

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PDF PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M

    MY2N 24VDC, IEC255

    Abstract: OMRON LY2 IEC 255 OMRON LY2 iec255 5A, 250VAC Relay relay my4n omron circuit diagram BJ 938 Transistor OMRON LY2 iec255 relay MY2 24VDC, IEC255 BJ 938 Transistor Data relay my2n omron 8 pin MY4N 24VDC, IEC255
    Text: Components Catalogue Contents Contents Welcome 7-8 POWER RELAYS 9 - 156 Technical Information – Power & Signal Relays 9 - 28 AUTOMOTIVE RELAYS 274 - 313 Selection Guide 274 - 277 G8N-1 278 - 282 Selection Guide 29 - 40 G8ND-2 283 - 287 G5B 41 - 44 G8NW 288 - 292


    Original     		PDF

    D4SL-N

    Abstract: floatless switch diagram TL4019 E3RB
    Text: 2014-2015 Industrial Components Solution Selection Guide Sensing Co n t ro l Co m p o n e n t s S w i t c h i n g Co m p o n e n t s S a fe t y Better machines OMRON Automation and Safety is a leading global supplier of automation systems serving industrial


    Original     		PDF

    OMRON LY2 relay

    Abstract: LY2 relay OMRON LY4 RELAY OMRON ly3-0 omron relay ly2 OMRON LY3 relay OMRON LY1 relay ly3 24 vdc OMRON LY2 N LY2N 120vac
    Text: General Purpose Relay LY • Arc barrier equipped. • High dielectric strength 2,000 VAC . • Long dependable service life assured by Ag-Alloy contacts. • Choose models with single or bifurcated contacts, LED indicator, diode surge suppression, push-to-test button, or RC circuit.


    Original     		PDF X301-E-1b OMRON LY2 relay LY2 relay OMRON LY4 RELAY OMRON ly3-0 omron relay ly2 OMRON LY3 relay OMRON LY1 relay ly3 24 vdc OMRON LY2 N LY2N 120vac

    PTF08-E

    Abstract: PTF14A-E LY2N-CR OMRON LY4 LY2 relay LY3F LY1N LY2ND PTF14A LY2-D
    Text: General-purpose Relay LY A Miniature Power Relay Equipped with arc barrier. Withstand voltage: 2,000 V. RC+Y LR Ordering Information Open Relays Type Standard Contact form Plug-in/solder terminals Plug-in/solder terminals with indicator PCB terminals Upper-mounting


    Original     		PDF PTF14A-E PT14QN PT14-0 Y92H-3 PTF08-E PTF14A-E LY2N-CR OMRON LY4 LY2 relay LY3F LY1N LY2ND PTF14A LY2-D

    OMRON LY2 relay

    Abstract: 3PDT switch PFP-100N2 PT08 PT08QN PT11 PT14 PTF08A-E PTF11A PTF14A-E
    Text: General Purpose Relay LY • Arc barrier equipped. • High dielectric strength 2,000 VAC . • Long dependable service life assured by Ag-Alloy contacts. • Choose models with single or bifurcated contacts, LED indicator, diode surge suppression, push-to-test button, or RC circuit.


    Original     		PDF JB301-E3-01 OMRON LY2 relay 3PDT switch PFP-100N2 PT08 PT08QN PT11 PT14 PTF08A-E PTF11A PTF14A-E

    OMRON LY2 iec255 relay

    Abstract: OMRON LY4 iec255 50a relay socket PT08 PT08QN PT11 PT14 PTF08A PTF08A-E PTF11A
    Text: General-purpose Relay LY A Miniature Power Relay Equipped with arc barrier. Dielectric strength: 2,000 V. Built-in diode models added to the LY Series. Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or


    Original     		PDF Y92H-3 J002-E1-9A OMRON LY2 iec255 relay OMRON LY4 iec255 50a relay socket PT08 PT08QN PT11 PT14 PTF08A PTF08A-E PTF11A

    PTF08A-E

    Abstract: PT08-0
    Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 naHenbKM flna npoMbiwneHHbix p e n e c e p u u LY2 K o f l: O nH caH H e PTF08A-E PT08-0 naHe^bKa Ha WHHy DIN naHe^bKa PCB (c BbiBOAawm nc>Ana^Ky) MOHTaWHbie flB a OTBepCTMfl nofl bmht M3, M4


    OCR Scan     		PDF PTF08A-E PT08-0 PTF08A-E PT08-0