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    PTF080601E Search Results

    PTF080601E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTF080601E Infineon Technologies LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Original PDF
    PTF080601EV1 Infineon Technologies Transistor Mosfet 65V 3(30248) Original PDF

    PTF080601E Datasheets Context Search

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    BCP56

    Abstract: LM7805 PTF080601E PTF080601F transistor smd marking NE
    Text: PTF080601E PTF080601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 860 – 960 MHz Description PTF080601E Package 30265 The PTF080601E and PTF080601F are 60-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible. Full gold metallization ensures excellent device lifetime


    Original     		PDF PTF080601E PTF080601F PTF080601E PTF080601F 60-watt, PTF080601F* BCP56 LM7805 transistor smd marking NE

    PTF080601

    Abstract: PTF080601A PTF080601E PTF080601F 30248
    Text: Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description Features The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080601 PTF080601 PTF080601A PTF080601E PTF080601F 30248

    Untitled

    Abstract: No abstract text available
    Text: Product Brief PTF080601 GSM/EDGE/CDMA RF Power FET The PTF080601 Performance Optimized for EDGE and CDMA2000 applications, the PTF080601 is one of our new line of 860 MHz to 960 MHz devices. Typical EDGE performance for this device delivers 30 W average and 18 dB gain with


    Original     		PDF PTF080601 CDMA2000 PTF080601 B134-H8300-X-0-7600